Abstract:
A joining method, a method of mounting a semiconductor package (PKG) using the same, and a substrate-joining structure prepared thereby are provided. The joining method may comprise placing a first junction composition including tin and silver, and a second junction composition, including tin and bismuth to contact each other and forming a junction by performing a thermal treatment on the junction compositions at a temperature of at least 170° C. or higher.
Abstract:
An apparatus that includes a first component defining an interior of the apparatus; a first solder composition exterior to the first component; a second solder composition exterior to the first solder composition and the first component; and a second component exterior to the second solder composition, the first solder composition, and the first component.
Abstract:
An integrated circuit package system including a high-density small footprint system-in-package with a substrate is provided. Passive components are mounted on the substrate. Solder separators are provided on the substrate, the solder separators having flattened tops at a predetermined height above the substrate. A die is supported on the solder separators above the substrate.
Abstract:
The present invention includes a semiconductor package that forms the solder array joints on the die surface and corresponding BGA substrate and PCB respectively. The life times of array solder joints are increased through the use of two sets of array joints. The top array comprises a plurality of high melting solder joints and a plurality of low melting solder joints, while the bottom array comprises a plurality of high melting solder joints only. The reflow temperature of SMT assembly is between the aforementioned high melting point and low melting point of solder joints. In addition, each solder joint comprises a flat surface at its front edge.
Abstract:
An electronic device comprised of a wiring board with a semiconductor component. The device is unlikely to have any defects, such as cracks to a solder joint portion during a reflow process of a flip-chip connection. The semiconductor component is flip-chip bonded at a pad array at a component side thereof to a pad array at a board side by way of an individual solder joint portion. In a solder resist layer at a semiconductor component side and a solder resist layer at a board side, D/D0 is prepared to be in a range of 0.70 to 0.99, where D is a bottom inner diameter of an opening at the board side and D0 is a bottom inner diameter of an opening at the component side.
Abstract translation:一种由具有半导体部件的布线板构成的电子装置。 在倒装芯片连接的回流工艺期间,器件不太可能具有任何缺陷,例如焊接部分的裂纹。 半导体部件在其一侧的焊盘阵列处通过单独的焊接部分在基板侧被倒装成焊盘阵列。 在半导体部件侧的阻焊层和基板侧的阻焊层中,D / D 0为0.70〜0.99的范围,其中D为板侧开口的底部内径 D 0是部件侧的开口的底部内径。
Abstract:
A semiconductor device comprises a semiconductor element which is flip-chip bonded to a circuit substrate. The semiconductor element and the circuit substrate are flip-chip bonded using a sealing resin having flux function. The semiconductor element includes a solder bump formed on a first electrode pad through a first low melting point solder layer. The circuit substrate includes a second electrode pad corresponding to the first electrode pad, and a second low melting point solder layer is formed on the second electrode pad. The solder bump is bonded to the first and second electrode pads through the first and second low melting point solder layers.
Abstract:
A substrate has at least one via-in-pad that includes a bond pad and a bore. In addition, the substrate has a plug coupled to the at least one via-in-pad, the plug has a first conductive material and adapted to couple with a solder ball having a second conductive material, the first conductive material having a higher reflow temperature than the second conductive material.
Abstract:
A semiconductor device in chip format having a chip which has at least one first insulating layer and electrical connection pads free of the insulating layer is described. On the first insulating layer, interconnects run from the electrical connection pads to base regions of external connection elements. A further applied insulating layer is provided with openings leading from the outside to the base regions of the external connection elements. In the openings there is a conductive adhesive, onto which small balls which are metallic at least on the outside are placed. The semiconductor element can also contain a solder paste instead of a conductive adhesive in the openings, and metallized small plastic balls are placed onto the solder paste. The invention furthermore relates to methods for producing the semiconductor device described.
Abstract:
What is provided is a multi-layer PCB having a plurality of stacked dielectric layers, a conductor disposed on at least one of the plurality of dielectric layers, and a non-conductive via extending through at least a portion of the plurality of dielectric layers to intersect the conductor. A conductive body in an activated state is introduced into the non-conductive via, and upon contacting the conductor, the activated state conductive body adheres to the conductor. The activated state conductive body is then effected to a deactivated state, wherein the conductive body is affixed to the conductor to provide an electrical connection thereto.
Abstract:
It is an object of the present invention to provide an electronic device using completely new soldered connection, and more particularly to achieve flip chip bonding on a high temperature side in a temperature hierarchy connection as an alternative method for high Pb containing solder including a large mount of Pb. The object can be achieved by using a configuration in which metallic balls including a single metal, an alloy, a chemical compound or a mixture thereof are connected by Sn or In for pads between a chip and a substrate.