公开(公告)号：US20250087442A1

公开(公告)日：2025-03-13

申请号：US18243219

申请日：2023-09-07

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： Pieter Kruit

IPC: H01J37/14 ,  H01J37/05 ,  H01J37/153 ,  H01J37/244

Abstract: An electron beam apparatus (100) is described, including an electron source (105) configured to generate a primary electron beam propagating along an optical axis (A), a sample stage (108) configured to support a sample, an objective lens (120) configured to focus the primary electron beam on the sample for causing an emission of a signal electron beam and a foil or grid lens (300, 400) for influencing the signal electron beam. The foil or grid lens includes an electrode (340) that surrounds the optical axis; and a first foil or grid (320) adjacent to the electrode and perpendicular to the optical axis, the first foil or grid being substantially transparent to electrons, wherein a central opening (325) configured to allow the primary electron beam to pass through the central opening is provided in the first foil or grid.

公开(公告)号：US20230411113A1

公开(公告)日：2023-12-21

申请号：US18210169

申请日：2023-06-15

Applicant: JEOL Ltd.

Inventor： Tatsuya Uchida ,  Terutaka Shimojima

IPC: H01J37/244 ,  H01J37/05 ,  H01J37/28

CPC classification number: H01J37/244 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/24485

Abstract: An electron spectrometer is provided which can collect spectra in a reduced measurement time. The electron spectrometer includes an electron analyzer for providing energy dispersion of electrons emitted from a sample (S), a detector having a plurality of detection elements juxtaposed and arranged in the direction of energy dispersion of the dispersed electrons, and a processor. The processor operates (i) to sweep a measurement energy in first incremental energy steps (ΔE1) within the analyzer, to detect the dispersed electrons with the detection elements, and to obtain a plurality of resulting first spectra; (ii) to interpolate points of measurement in each of the first spectra; and (iii) to generate a spectral chart in second incremental energy steps (ΔE2) smaller than the first incremental energy steps (ΔE1) on the basis of the first spectra for which the points of measurement have been interpolated.

公开(公告)号：US11651932B1

公开(公告)日：2023-05-16

申请号：US17510996

申请日：2021-10-26

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Jay T. Scheuer ,  Sudhakar Mahalingam ,  Nevin Clay

IPC: H01J37/08 ,  H01J37/05 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/05 ,  H01J37/3171

Abstract: An ion source capable of extracting a ribbon ion beam with improved vertical angular uniformity is disclosed. The extraction plate and extraction optics are designed such that there is at least one non-uniform gap between adjacent components. A non-uniform gap may be effective in reducing angular spread non-uniformity of the extracted ribbon ion beam. Specifically, for a given gap in the Z direction, ions extracted from regions with lower plasma density may have more vertical angular spread. A larger gap in the Z direction between components in this region may make the vertical angular spread closer to the vertical angular spread of ions extracted from regions with higher plasma density. The non-uniform gap may be created by having an extraction plate that is flat or curved and electrodes that are flat, convex or concave. In certain embodiments, the non-uniform gap is located between the extraction plate and the suppression electrode.

公开(公告)号：US11562885B2

公开(公告)日：2023-01-24

申请号：US17351842

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Thomas Stacy ,  Jay T. Scheuer ,  Eric D. Hermanson ,  Bon-Woong Koo ,  Tseh-Jen Hsieh

IPC: H01J37/05 ,  H01J37/301 ,  H01J37/317

Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.

公开(公告)号：US20220363558A1

公开(公告)日：2022-11-17

申请号：US17743742

申请日：2022-05-13

Applicant: SHINE Technologies, LLC

Inventor： Joseph Sherman ,  Sarko Cherekdjian

IPC: C01F17/00 ,  H01J37/05 ,  H01J37/08

Abstract: A system includes an ion source configured to generate ions having a first polarity, one or more extraction electrodes configured to extract the ions from the ion source as an ion beam having an extraction energy, a mass resolving slit or aperture configured to select a desired isotope from the ion beam such that a desired isotopic ion beam passes through the mass resolving slit or aperture, a target positioned relative to the mass resolving slit or aperture so that the desired isotopic ion beam is incident on the target, and a voltage source coupled to the target and configured to hold the target at a first voltage having the first polarity. The first voltage causes a reduction of the extraction energy as the desired isotopic ion beam approaches the target to minimize sputtering and maximize collection of the ions on the target to reconstitute an ionized material.

公开(公告)号：US20220336237A1

公开(公告)日：2022-10-20

申请号：US17680943

申请日：2022-02-25

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Takashi SAKAMOTO

IPC: H01L21/67 ,  H01L21/683 ,  H01J37/20 ,  H01J37/05 ,  H01J37/317

Abstract: A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

公开(公告)号：US11462386B2

公开(公告)日：2022-10-04

申请号：US16716965

申请日：2019-12-17

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Manivannan Thothadri ,  Chien-An Chen ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen

IPC: H01J37/305 ,  H01J37/32 ,  G02B6/13 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/073 ,  H01J37/304 ,  H01J37/147

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US11462382B2

公开(公告)日：2022-10-04

申请号：US17185085

申请日：2021-02-25

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Hsun-Po Wen ,  Sung-Hui Chen

IPC: H01J37/24 ,  H01J37/317 ,  H01J37/05 ,  H01J37/20 ,  H01J37/14

Abstract: The present disclosure provides a substrate-processing apparatus. The substrate-processing apparatus includes an ion implanter and a controller associated with the ion implanter. The ion implanter is configured to implant ions into a substrate using an ion beam. The controller is configured to monitor an initial implantation profile of the ion beam and tune the ion implanter to provide the ion beam having a desired implantation profile based on the initial implantation profile and the desired implantation profile.

公开(公告)号：US11430634B2

公开(公告)日：2022-08-30

申请号：US17080802

申请日：2020-10-26

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Kartik Ramaswamy ,  Yang Yang ,  Manivannan Thothadri ,  Chien-An Chen

IPC: H01J37/305 ,  H01J37/32 ,  G02B6/13 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/073 ,  H01J37/304 ,  H01J37/147

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US20220270846A1

公开(公告)日：2022-08-25

申请号：US17185085

申请日：2021-02-25

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Hsun-Po WEN ,  Sung-Hui CHEN

IPC: H01J37/24 ,  H01J37/317 ,  H01J37/05 ,  H01J37/14 ,  H01J37/20

Abstract: The present disclosure provides a substrate-processing apparatus. The substrate-processing apparatus includes an ion implanter and a controller associated with the ion implanter. The ion implanter is configured to implant ions into a substrate using an ion beam. The controller is configured to monitor an initial implantation profile of the ion beam and tune the ion implanter to provide the ion beam having a desired implantation profile based on the initial implantation profile and the desired implantation profile.