公开(公告)号：US09634153B2

公开(公告)日：2017-04-25

申请号：US14399279

申请日：2013-04-30

Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Won Kyu Moon ,  James Edward West ,  Min Sung ,  Yub Je ,  Kum Jae Shin

IPC: H01L29/84 ,  B81B3/00 ,  G01P15/08 ,  G01L9/00 ,  H04R23/00 ,  H01L41/04 ,  H01L41/113

CPC classification number: H01L29/84 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2201/0264 ,  G01L9/0072 ,  G01L9/008 ,  G01P15/08 ,  H01L41/04 ,  H01L41/1132 ,  H04R23/006 ,  H04R2201/003

Abstract: The present invention relates to a sensor that uses a sensing mechanism having a combined static charge and a field effect transistor, the sensor including: a substrate; source and drain units formed on the substrate and separated from each other; a channel unit interposed between the source and drain units; a membrane separated from the channel unit, disposed on a top portion and displaced in response to an external signal; and a static charge member formed on a bottom surface of the membrane separately from the channel unit and generating an electric field. Accordingly, since the sensor using a sensing mechanism having a combined static charge and a field effect transistor according to an embodiment of the present invention can measure the displacement or movement of the sensor by measuring a change of the electric field of the channel unit of the field effect transistor by using a static member, the electric field can be formed so as to be proportional to an amount of charge and inversely proportional to a squared distance regardless of the intensity and distribution of an external electric field. Therefore, sensitivity is improved without being affected by an external electric field.

公开(公告)号：US09617147B2

公开(公告)日：2017-04-11

申请号：US14685309

申请日：2015-04-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng ,  Jiou-Kang Lee ,  Kai-Chih Liang ,  Chung-Hsien Lin ,  Te-Hao Lee

IPC: H01L21/00 ,  B81C1/00

CPC classification number: B81C1/00269 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2203/0307 ,  B81B2207/012 ,  B81C1/00039 ,  B81C1/00261 ,  B81C2203/035

Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.

公开(公告)号：US09610543B2

公开(公告)日：2017-04-04

申请号：US14170187

申请日：2014-01-31

Applicant: Infineon Technologies AG

Inventor： Thomas Grille ,  Ursula Hedenig ,  Michael Roesner ,  Gudrun Stranzl ,  Martin Zgaga

IPC: H01L21/00 ,  B01D67/00 ,  B81C1/00

CPC classification number: B81B7/0061 ,  B01D67/0034 ,  B81B2201/0257 ,  B81B2201/10 ,  B81C1/00904 ,  B81C2201/0132 ,  Y10T428/24273

Abstract: A method for structuring a substrate and a structured substrate are disclosed. In an embodiment a method includes providing a substrate with a first main surface and a second main surface, wherein the substrate is fixed to a carrier arrangement at the second main surface, performing a photolithography step at the first main surface of the substrate to mark a plurality of sites at the first main surface, the plurality of sites corresponding to future perforation structures and future kerf regions for a plurality of future individual semiconductor chips to be obtained from the substrate, and plasma etching the substrate at the plurality of sites until the carrier arrangement is reached, thus creating the perforation structures within the plurality of individual semiconductor chips and simultaneously separating the individual semiconductor chips along the kerf regions.

公开(公告)号：US09604843B2

公开(公告)日：2017-03-28

申请号：US14735652

申请日：2015-06-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu

IPC: B81B7/00 ,  B81B7/04 ,  B81C3/00 ,  B81C1/00 ,  B81B7/02

CPC classification number: B81B7/04 ,  B81B7/0032 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00293 ,  B81C1/00309 ,  B81C3/001 ,  B81C2203/0118

Abstract: Embodiments of the present disclosure include MEMS devices and methods for forming MEMS devices. An embodiment is a method for forming a microelectromechanical system (MEMS) device, the method including forming a MEMS wafer having a first cavity, the first cavity having a first pressure, and bonding a carrier wafer to a first side of the MEMS wafer, the bonding forming a second cavity, the second cavity having a second pressure, the second pressure being greater than the first pressure. The method further includes bonding a cap wafer to a second side of the MEMS wafer, the second side being opposite the first side, the bonding forming a third cavity, the third cavity having a third pressure, the third pressure being greater than the first pressure and less than the second pressure.

公开(公告)号：US09604842B2

公开(公告)日：2017-03-28

申请号：US14675230

申请日：2015-03-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alberto Cattani ,  Alessandro Gasparini ,  Federico Guanziroli ,  Pierangelo Confalonieri

IPC: B81B7/04 ,  B81B7/00 ,  B81B3/00

CPC classification number: B81B7/008 ,  B81B3/00 ,  B81B7/04 ,  B81B2201/0257 ,  B81B2207/03 ,  B81B2207/053 ,  H04R3/007 ,  H04R3/12 ,  H04R19/005 ,  H04R2201/003

Abstract: A system for driving a MEMS array having a number of MEMS structures, each defining at least one row terminal and one column terminal, envisages: a number of row driving stages, each for supplying row-biasing signals to the row terminal of each MEMS structure associated to a respective row; a number of column driving stages, each for supplying column-biasing signals to the column terminal of each MEMS structure associated to a respective column; and a control unit, for supplying row-address signals to the row driving stages for generation of the row-biasing signals and for supplying column-address signals to the column driving stages for generation of the column-biasing signals. The control unit further supplies row-deactivation and/or column-deactivation signals to one or more of the row and column driving stages, for causing deactivation of one or more rows and/or columns of the MEMS array.

公开(公告)号：US09601970B2

公开(公告)日：2017-03-21

申请号：US14135567

申请日：2013-12-19

Applicant: Rolls-Royce North American Technologies, Inc. ,  Rolls-Royce Corporation

Inventor： Mat French ,  John T. Alt ,  Mark J. Blackwelder

IPC: H02K7/18 ,  F02C7/32 ,  F01D15/10 ,  F02C7/36 ,  F02C9/00 ,  H02J9/06 ,  F02C7/268 ,  B81B7/02 ,  B81C1/00 ,  H02P101/30 ,  H02P101/25

CPC classification number: H02P9/48 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00158 ,  B81C1/00301 ,  F01D15/10 ,  F02C7/268 ,  F02C7/32 ,  F02C7/36 ,  F02C9/00 ,  F02K3/06 ,  F02N11/0862 ,  F05B2220/706 ,  F05D2220/76 ,  F05D2270/62 ,  H02J1/102 ,  H02J1/16 ,  H02J3/30 ,  H02J3/32 ,  H02J3/38 ,  H02J9/061 ,  H02K7/1823 ,  H02P2101/25 ,  H02P2101/30

Abstract: A gas turbine engine includes an electrical system that includes a controller coupled to a first inverter/converter controller, a second inverter/converter controller, and a converter/controller that is coupled to an energy storage device. The system is configured to provide electrical power to a first electrical bus and a second electrical bus, from first and second electrical machines, under the direction of the controller. The converter controller is configured to control the amount of electrical power supplied to the first electrical bus and the second electrical bus from the energy storage system. The amount of electrical power received from the first electrical bus and the second electrical bus, and energy supplied to the energy storage system are under the direction of the controller.

公开(公告)号：US09599648B2

公开(公告)日：2017-03-21

申请号：US14367716

申请日：2012-11-14

Applicant: OMRON Corporation

Inventor： Takashi Kasai ,  Inoue Tadashi

IPC: G01H11/06 ,  H04R19/00 ,  G01R27/26 ,  B81C1/00 ,  H04R19/04

CPC classification number: G01R27/2605 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00873 ,  G01H11/06 ,  H04R19/005 ,  H04R19/04

Abstract: Diaphragm 33 is provided on a top surface of silicon substrate 32, and plate unit 39 is fixed to the top surface of silicon substrate 32 so as to cover the movable electrode film with a gap. Plate unit 39 is made of an insulating material. Fixed electrode film 40 is formed on a bottom surface of plate unit 39, and diaphragm 33 and fixed electrode film 40 constitute a capacitor. In an area around plate unit 39, a whole outer peripheral edge of the top surface of silicon substrate 32 is exposed from plate unit 39. On the top surface of the substrate 32, insulating sheet 47 made of the insulating material is formed in a part of an area exposed from plate unit 39, and electrode pad 48 electrically connected to diaphragm 33 and electrode pad 49 electrically connected to fixed electrode film 40 are provided on a top surface of insulating sheet 47.

公开(公告)号：US20170078802A1

公开(公告)日：2017-03-16

申请号：US15121831

申请日：2014-03-03

Applicant: Epcos AG

Inventor： Jan Tue Ravnkilde ,  Dennis Mortensen ,  Morten Ginnerup

IPC: H04R19/04 ,  H04R7/16 ,  B81B3/00 ,  H04R9/08

CPC classification number: H04R19/04 ,  B06B1/0292 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0127 ,  H04R7/16 ,  H04R19/005 ,  H04R2201/003

Abstract: A non-uniform stress distribution of a MEMS microphone having a non-circular shape is compensated by a structured back plate that has a compensating structure to provide a stress distribution opposite to that of the membrane.

Abstract translation: 具有非圆形形状的MEMS麦克风的不均匀应力分布由具有补偿结构的结构化背板补偿，以提供与膜的应力分布相反的应力分布。

公开(公告)号：US20170070825A1

公开(公告)日：2017-03-09

申请号：US15307814

申请日：2015-04-22

Applicant: EPCOS AG

Inventor： Wolfgang Pahl

IPC: H04R19/04 ,  H04R31/00 ,  B81C1/00 ,  H04R19/00

CPC classification number: H04R19/04 ,  B81B7/0048 ,  B81B2201/0257 ,  B81C1/00134 ,  H04R1/2892 ,  H04R19/005 ,  H04R31/00 ,  H04R2410/03 ,  H04R2499/11

Abstract: A microphone and a method for producing a microphone are disclosed. The microphone includes a substrate, a spring element plastically elongated in a direction perpendicular to the substrate, a transducer element in electrical contact with the substrate by way of the spring element and a cover to which the transducer element is fastened, the cover is arranged in such a way that the transducer element is arranged between the cover and the substrate.

Abstract translation: 公开了麦克风和麦克风的制造方法。 麦克风包括基板，沿着垂直于基板的方向塑性伸长的弹簧元件，通过弹簧元件与基板电接触的换能器元件和换能器元件紧固到的盖，盖被布置在 换能器元件布置在盖和基板之间的方式。

公开(公告)号：US20170055085A1

公开(公告)日：2017-02-23

申请号：US15307301

申请日：2014-06-27

Applicant: GOERTEK INC.

Inventor： Zhe Wang

IPC: H04R19/04 ,  H04R19/00 ,  B81B3/00

CPC classification number: H04R19/04 ,  B81B3/001 ,  B81B3/0051 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81B2207/015 ,  B81C2203/0714 ,  H04R19/005 ,  H04R2201/003

Abstract: A silicon microphone with a suspended diaphragm and a system with the same are provided, the microphone comprises: a silicon substrate provided with a back hole therein; a compliant diaphragm disposed above the back hole of the silicon substrate and separated from the silicon substrate; a perforated backplate disposed above the diaphragm with an air gap sandwiched in between; and a precisely defined support mechanism, disposed between the diaphragm and the backplate with one end thereof fixed to the edge of the diaphragm and the other end thereof fixed to the backplate, wherein the diaphragm and the backplate are used to form electrode plates of a variable condenser. The microphone with a suspended diaphragm can improve the repeatability and reproducibility in performance and can reduce the diaphragm stress induced by the substrate.

Abstract translation: 提供具有悬挂隔膜的硅麦克风及其系统，所述麦克风包括：在其中设置有后孔的硅基板; 柔性膜，其设置在所述硅衬底的所述背孔的上方并与所述硅衬底分离; 设置在隔膜上方的穿孔背板，夹在其间的气隙; 以及精确限定的支撑机构，其设置在隔膜和背板之间，其一端固定在隔膜的边缘，另一端固定在背板上，其中隔膜和背板用于形成可变的电极板 冷凝器 具有悬挂隔膜的麦克风可以提高性能的重复性和再现性，并可以减少由基板引起的隔膜应力。