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    Temperature compensation for silicon MEMS resonator
    101.
    发明授权
    Temperature compensation for silicon MEMS resonator 有权
    硅MEMS谐振器的温度补偿

    公开(公告)号：US07202761B2

    公开(公告)日：2007-04-10

    申请号：US11405817

    申请日：2006-04-18

    Applicant: Markus Lutz ,  Aaron Partridge

    Inventor： Markus Lutz ,  Aaron Partridge

    IPC: H03H9/02 ,  H03H9/46

    CPC classification number: H03H9/02448 ,  B81B3/0072 ,  B81B2201/0271 ,  B81B2203/0118 ,  H03H9/02259 ,  H03H9/02338 ,  H03H9/02417 ,  H03H9/2457 ,  H03H9/2463 ,  H03H2009/02496 ,  H03H2009/02511

    Abstract: Thermally induced frequency variations in a micromechanical resonator are actively or passively mitigated by application of a compensating stiffness, or a compressive/tensile strain. Various composition materials may be selected according to their thermal expansion coefficient and used to form resonator components on a substrate. When exposed to temperature variations, the relative expansion of these composition materials creates a compensating stiffness, or a compressive/tensile strain.

    Abstract translation: 通过施加补偿刚度或压缩/拉伸应变，微机械谐振器中的热诱导频率变化被主动地或被动地减轻。 可以根据其热膨胀系数选择各种组合物材料，并用于在基底上形成共振器部件。 当暴露于温度变化时，这些组合物材料的相对膨胀产生补偿刚度或压缩/拉伸应变。

    METHOD FOR REDUCING HARMONIC DISTORTION IN COMB DRIVE DEVICES
    103.
    发明申请
    METHOD FOR REDUCING HARMONIC DISTORTION IN COMB DRIVE DEVICES 有权
    减少混合动力装置中谐波失真的方法

    公开(公告)号：US20060113644A1

    公开(公告)日：2006-06-01

    申请号：US11275575

    申请日：2006-01-17

    Applicant: Jeffrey Ridley ,  James Neus

    Inventor： Jeffrey Ridley ,  James Neus

    IPC: H01L23/495

    CPC classification number: B81C1/00698 ,  B81B2201/0271 ,  B81B2201/033 ,  B81C2201/0132

    Abstract: Methods of fabricating comb drive devices utilizing one or more sacrificial etch-buffers are disclosed. An illustrative fabrication method may include the steps of etching a pattern onto a wafer substrate defining one or more comb drive elements and sacrificial etch-buffers, liberating and removing one or more sacrificial etch-buffers prior to wafer bonding, bonding the etched wafer substrate to an underlying support substrate, and etching away the wafer substrate. In some embodiments, the sacrificial etch-buffers are removed after bonding the wafer to the support substrate. The sacrificial etch-buffers can be provided at one or more selective regions to provide greater uniformity in etch rate during etching. A comb drive device in accordance with an illustrative embodiment can include a number of interdigitated comb fingers each having a more uniform profile along their length and/or at their ends, producing less harmonic distortion during operation.

    Abstract translation: 公开了使用一个或多个牺牲蚀刻缓冲器制造梳状驱动装置的方法。 示例性的制造方法可以包括以下步骤：将图案蚀刻到限定一个或多个梳状驱动元件和牺牲蚀刻缓冲器的晶片衬底上，在晶片接合之前释放和去除一个或多个牺牲蚀刻缓冲器，将蚀刻的晶片衬底接合到 底层支撑衬底，并蚀刻掉晶片衬底。 在一些实施例中，在将晶片接合到支撑衬底之后去除牺牲蚀刻缓冲器。 可以在一个或多个选择性区域处提供牺牲蚀刻缓冲器，以在蚀刻期间提供更大的蚀刻速率均匀性。 根据说明性实施例的梳状驱动装置可以包括多个交叉指状梳，每个梳指在其长度和/或其端部具有更均匀的轮廓，在操作期间产生较少的谐波失真。

    Ceramic microelectromechanical structure
    104.
    发明授权
    Ceramic microelectromechanical structure 有权
    陶瓷微机电结构

    公开(公告)号：US07035591B2

    公开(公告)日：2006-04-25

    申请号：US10827004

    申请日：2004-04-19

    Applicant: Charles M. Newton ,  Raymond C. Rumpf ,  Carol Gamlen

    Inventor： Charles M. Newton ,  Raymond C. Rumpf ,  Carol Gamlen

    IPC: H04B3/38

    CPC classification number: B81C1/0015 ,  B81B2201/0271 ,  B81C2201/0109 ,  H01H59/0009 ,  H01P1/127 ,  H05K1/092 ,  H05K3/02 ,  Y10T29/49117 ,  Y10T428/24926 ,  Y10T428/2495

    Abstract: A microelectromechanical structure and method is disclosed. A ceramic substrate preferably is formed from low temperature co-fired ceramic sheets. A low loss photodefinable dielectric planarizing layer is formed over one surface of the ceramic substrate. This layer can e a sacrificial layer or a subsequent sacrificial layer added. A photodefined conductor is printed over the low loss dielectric planarizing layer and formed with the sacrificial layer into a structural circuit component. In one aspect of the invention, a switch is formed with a biasing actuator and deflectable member formed over the biasing actuator and moveable into open and closed circuit positions.

    Abstract translation: 公开了一种微机电结构和方法。 陶瓷基板优选由低温共烧陶瓷片形成。 在陶瓷基板的一个表面上形成低损耗可光限定介电平面化层。 该层可以添加牺牲层或随后的牺牲层。 在低损耗介电平面化层上印刷光致定导体，并将牺牲层形成为结构电路部件。 在本发明的一个方面，开关形成有偏置致动器和可偏转构件，该偏置致动器和偏转构件形成在偏置致动器上方并且可移动到打开和闭合的位置。

    Microelectronic mechanical system and methods
    106.
    发明申请
    Microelectronic mechanical system and methods 有权

    公开(公告)号：US20050221528A1

    公开(公告)日：2005-10-06

    申请号：US11129541

    申请日：2005-05-13

    Applicant: Mike Bruner

    Inventor： Mike Bruner

    IPC: B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  H01L21/46 ,  H02N1/00 ,  H03H9/24

    CPC classification number: B81C1/00484 ,  B81B2201/0271 ,  B81B2203/0136 ,  B81C1/00246 ,  B81C1/00333 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0136 ,  B81C2203/0735

    Abstract: The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x (wherein Ng=Xe, Kr or Ar: and where x=1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.

    Method for reducing harmonic distortion in comb drive devices
    107.
    发明申请
    Method for reducing harmonic distortion in comb drive devices 失效
    减少梳状驱动装置谐波失真的方法

    公开(公告)号：US20050136621A1

    公开(公告)日：2005-06-23

    申请号：US10746219

    申请日：2003-12-22

    Applicant: Jeffrey Ridley ,  James Neus

    Inventor： Jeffrey Ridley ,  James Neus

    IPC: B81B3/00 ,  H02N1/00 ,  H01L21/30

    CPC classification number: B81C1/00698 ,  B81B2201/0271 ,  B81B2201/033 ,  B81C2201/0132

    Abstract: Methods of fabricating comb drive devices utilizing one or more sacrificial etch-buffers are disclosed. An illustrative fabrication method may include the steps of etching a pattern onto a wafer substrate defining one or more comb drive elements and sacrificial etch-buffers, liberating and removing one or more sacrificial etch-buffers prior to wafer bonding, bonding the etched wafer substrate to an underlying support substrate, and etching away the wafer substrate. In some embodiments, the sacrificial etch-buffers are removed after bonding the wafer to the support substrate. The sacrificial etch-buffers can be provided at one or more selective regions to provide greater uniformity in etch rate during etching. A comb drive device in accordance with an illustrative embodiment can include a number of interdigitated comb fingers each having a more uniform profile along their length and/or at their ends, producing less harmonic distortion during operation.

    Abstract translation: 公开了使用一个或多个牺牲蚀刻缓冲器制造梳状驱动装置的方法。 示例性的制造方法可以包括以下步骤：将图案蚀刻到限定一个或多个梳状驱动元件和牺牲蚀刻缓冲器的晶片衬底上，在晶片接合之前释放和去除一个或多个牺牲蚀刻缓冲器，将蚀刻的晶片衬底接合到 底层支撑衬底，并蚀刻掉晶片衬底。 在一些实施例中，在将晶片接合到支撑衬底之后去除牺牲蚀刻缓冲器。 可以在一个或多个选择性区域处提供牺牲蚀刻缓冲器，以在蚀刻期间提供更大的蚀刻速率均匀性。 根据说明性实施例的梳状驱动装置可以包括多个交叉指状梳，每个梳指在其长度和/或其端部具有更均匀的轮廓，在操作期间产生较少的谐波失真。

    Wafer level package type FBAR device and manufacturing method thereof
    108.
    发明申请
    Wafer level package type FBAR device and manufacturing method thereof 失效
    晶圆级封装型FBAR器件及其制造方法

    公开(公告)号：US20050056917A1

    公开(公告)日：2005-03-17

    申请号：US10755336

    申请日：2004-01-13

    Applicant: Jong Kwon

    Inventor： Jong Kwon

    IPC: H01L23/02 ,  B81B7/00 ,  H03H3/02 ,  H03H9/10 ,  H03H9/17 ,  H03H9/24 ,  H01L21/44 ,  H01L21/30 ,  H01L23/52

    CPC classification number: B81B7/007 ,  B81B2201/0271 ,  B81C2203/0109 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/16235 ,  H01L2924/181 ,  H03H3/02 ,  H03H9/105 ,  H03H9/173 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: Disclosed herein is a wafer level package type film bulk acoustic resonator (FBAR) device and a method for manufacturing the FBAR device, which can achieve miniaturization and reduction of a manufacturing cost due to a simplified process. The FBAR device comprises a substrate having a certain size, at least one device functional portion performing a resonance function by responding to electrical signals applied from the outside, the device functional portion being formed along a center portion of the substrate while defining a certain air gap therein, plural external electrodes formed on an upper surface of the substrate substantially coming into contact with both opposite edges of the upper surface, the external electrodes being electrically connected to the device functional portion, and a cap bonded onto the substrate so as to function as a cover for covering a remaining portion of the substrate except for the plural external electrodes.

    Abstract translation: 本发明公开了一种晶片级封装型薄膜体声波谐振器（FBAR）器件及其制造方法，该方法可以通过简化的工艺实现小型化和降低制造成本。 FBAR器件包括具有一定尺寸的衬底，至少一个器件功能部分通过响应于从外部施加的电信号来执行谐振功能，器件功能部分沿着衬底的中心部分形成，同时限定一定的气隙 其中，形成在基板的上表面上的多个外部电极基本上与上表面的两个相对边缘接触，外部电极电连接到器件功能部分，以及盖子结合到基板上，以起到 覆盖除了多个外部电极之外的基板的剩余部分的盖。

    Ceramic microelectromechanical structure
    110.
    发明申请
    Ceramic microelectromechanical structure 有权
    陶瓷微机电结构

    公开(公告)号：US20040198231A1

    公开(公告)日：2004-10-07

    申请号：US10827004

    申请日：2004-04-19

    Applicant: HARRIS CORPORATION

    Inventor： Charles M. Newton ,  Raymond C. Rumpf ,  Carol Gamlen

    IPC: H01L021/00 ,  H04B001/06

    CPC classification number: B81C1/0015 ,  B81B2201/0271 ,  B81C2201/0109 ,  H01H59/0009 ,  H01P1/127 ,  H05K1/092 ,  H05K3/02 ,  Y10T29/49117 ,  Y10T428/24926 ,  Y10T428/2495

    Abstract: A microelectromechanical structure and method is disclosed. A ceramic substrate preferably is formed from low temperature co-fired ceramic sheets. A low loss photodefinable dielectric planarizing layer is formed over one surface of the ceramic substrate. This layer can e a sacrificial layer or a subsequent sacrificial layer added. A photodefined conductor is printed over the low loss dielectric planarizing layer and formed with the sacrificial layer into a structural circuit component. In one aspect of the invention, a switch is formed with a biasing actuator and deflectable member formed over the biasing actuator and moveable into open and closed circuit positions.

    Abstract translation: 公开了一种微机电结构和方法。 陶瓷基板优选由低温共烧陶瓷片形成。 在陶瓷基板的一个表面上形成低损耗可光限定介电平面化层。 该层可以添加牺牲层或随后的牺牲层。 在低损耗介电平面化层上印刷光致定导体，并将牺牲层形成为结构电路部件。 在本发明的一个方面，开关形成有偏置致动器和可偏转构件，该偏置致动器和偏转构件形成在偏置致动器上方并且可移动到打开和闭合的位置。

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