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    Method for manufacturing micro-structure
    102.
    发明授权
    Method for manufacturing micro-structure 有权
    微结构制造方法

    公开(公告)号：US08785114B2

    公开(公告)日：2014-07-22

    申请号：US13157460

    申请日：2011-06-10

    Applicant: Hideto Kato ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    Inventor： Hideto Kato ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    IPC: G03F7/30 ,  G03F7/40 ,  G03F7/038 ,  G03F7/023 ,  G03F7/20

    CPC classification number: C09D163/04 ,  B81C1/00619 ,  B81C2201/0108 ,  G03F7/0226 ,  G03F7/0236 ,  G03F7/30 ,  G03F7/40 ,  G03F7/70466

    Abstract: A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.

    Abstract translation: 通过图案化牺牲膜来制造微结构，在图案上形成无机材料膜，为无机材料膜提供孔，并通过孔蚀刻掉牺牲膜图案，以限定具有图案轮廓的空间 。 图案化阶段包括以下步骤：（A）使用包含甲酚酚醛清漆树脂和交联剂的组合物形成牺牲膜，（B）将膜图案化为第一高能辐射，（C）显影，和（D）曝光 牺牲膜图案到第二高能量辐射和热处理，从而在甲酚酚醛清漆树脂内形成交联。

    MICROELECTRONIC SUBSTRATE COMPRISING A LAYER OF BURIED ORGANIC MATERIAL
    104.
    发明申请
    MICROELECTRONIC SUBSTRATE COMPRISING A LAYER OF BURIED ORGANIC MATERIAL 审中-公开
    包含有机材料层的微电子基板

    公开(公告)号：US20130207281A1

    公开(公告)日：2013-08-15

    申请号：US13764244

    申请日：2013-02-11

    Applicant: Commissariat A L'Energie Atomique Et Aux Ene Alt

    Inventor： Xavier BAILLIN ,  Jean-Louis Pornin

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00134 ,  B81B3/0018 ,  B81B7/0038 ,  B81C1/00357 ,  B81C2201/0108 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01L21/2007

    Abstract: Microelectronic substrate comprising at least: a support layer, a top layer comprising at least one semiconductor, a layer comprising at least one organic material able to be etched selectively with respect to the semiconductor of the top layer by using a dry etching, and disposed between the support layer and the top layer, and also comprising one or more portions of dielectric material the hardness of which is greater than that of the organic material, disposed in the layer of organic material, and the thickness of which is substantially equal to that of the layer of organic material.

    Abstract translation: 微电子衬底包括至少包括：支撑层，包括至少一个半导体的顶层，包含至少一种有机材料的层，所述至少一种有机材料可以通过使用干蚀刻相对于顶层的半导体选择性地被蚀刻，并且设置在 支撑层和顶层，并且还包括设置在有机材料层中的硬度大于有机材料的硬度的介电材料的一个或多个部分，其厚度基本上等于 有机材料层。

    Method of creating MEMS device cavities by a non-etching process
    106.
    发明授权
    Method of creating MEMS device cavities by a non-etching process 失效
    通过非蚀刻工艺制造MEMS器件腔的方法

    公开(公告)号：US08394656B2

    公开(公告)日：2013-03-12

    申请号：US12831898

    申请日：2010-07-07

    Applicant: Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    Inventor： Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    IPC: H01L21/00

    CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

    Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

    Abstract translation: 可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。 一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电 导电层。 另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电 导电层和第二导电层。

    Photosensitive Sacrificial Polymer with Low Residue
    107.
    发明申请
    Photosensitive Sacrificial Polymer with Low Residue 有权
    低残留光敏牺牲聚合物

    公开(公告)号：US20130011784A1

    公开(公告)日：2013-01-10

    申请号：US13537556

    申请日：2012-06-29

    Applicant: Paul A. Kohl ,  Yu-Chun Chen

    Inventor： Paul A. Kohl ,  Yu-Chun Chen

    IPC: G03F7/004 ,  G03F7/20

    CPC classification number: G03F7/095 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C2201/0108 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/168 ,  G03F7/36 ,  G03F7/38 ,  G03F7/40 ,  H01L21/7682

    Abstract: Embodiments according to the present invention relate generally to PAG bilayer and PAG-doped unilayer structures using sacrificial polymer layers that incorporate a photoacid generator having a concentration gradient therein. Said PAG concentration being higher in a upper portion of such structures than in a lower portion thereof. Embodiments according to the present invention also relate to a method of using such bilayers and unilayers to form microelectronic structures having a three-dimensional space, and methods of decomposition of the sacrificial polymer within the aforementioned layers.

    Abstract translation: 根据本发明的实施方案一般涉及使用掺入其中具有浓度梯度的光致酸发生器的牺牲聚合物层的PAG双层和PAG掺杂的单层结构。 所述PAG浓度在这种结构的上部比在其下部更高。 根据本发明的实施方案还涉及使用这种双层和单层以形成具有三维空间的微电子结构的方法，以及在上述层内分解牺牲聚合物的方法。

    Manufacturing method of three-dimensional structure
    108.
    发明授权
    Manufacturing method of three-dimensional structure 有权
    三维结构制造方法

    公开(公告)号：US08309176B2

    公开(公告)日：2012-11-13

    申请号：US12478298

    申请日：2009-06-04

    Applicant: Taisuke Isano ,  Kosuke Asano ,  Yasushi Kaneda

    Inventor： Taisuke Isano ,  Kosuke Asano ,  Yasushi Kaneda

    IPC: B32B38/00 ,  B32B38/10 ,  B32B37/00 ,  B32B37/02 ,  B05D1/32 ,  B05D1/36 ,  B05D1/38 ,  B05D5/00

    CPC classification number: B05D5/00 ,  B81C1/00126 ,  B81C2201/0108 ,  B81C2203/038

    Abstract: A method for manufacturing a three-dimensional structure includes forming a first structure having a relief pattern on a substrate, forming a sacrifice layer on the first structure such that the sacrifice layer can be filled in a concave part of the first structure and the sacrifice layer can cover a surface of a convex part of the first structure on a side opposite to the substrate, forming a second structure having a relief pattern on the sacrifice layer, and a fourth step of removing the sacrifice layer from between the first structure and the second structure, and thereby bringing the second structure into contact with the surface of the first structure.

    Abstract translation: 一种制造三维结构的方法包括在基板上形成具有浮雕图案的第一结构，在第一结构上形成牺牲层，使得牺牲层可以填充在第一结构的凹部中，牺牲层 可以在与基板相对的一侧覆盖第一结构的凸部的表面，在牺牲层上形成具有浮雕图案的第二结构，以及从第一结构和第二结构之间移除牺牲层的第四步骤 结构，从而使第二结构与第一结构的表面接触。

    METHOD FOR MANUFACTURING MICRO-STRUCTURE
    109.
    发明申请
    METHOD FOR MANUFACTURING MICRO-STRUCTURE 有权
    制造微结构的方法

    公开(公告)号：US20110305990A1

    公开(公告)日：2011-12-15

    申请号：US13157460

    申请日：2011-06-10

    Applicant: Hideto KATO ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    Inventor： Hideto KATO ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    IPC: G03F7/20 ,  G03F7/004

    CPC classification number: C09D163/04 ,  B81C1/00619 ,  B81C2201/0108 ,  G03F7/0226 ,  G03F7/0236 ,  G03F7/30 ,  G03F7/40 ,  G03F7/70466

    Abstract: A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.

    Abstract translation: 通过图案化牺牲膜来制造微结构，在图案上形成无机材料膜，为无机材料膜提供孔，并通过孔蚀刻掉牺牲膜图案，以限定具有图案轮廓的空间 。 图案化阶段包括以下步骤：（A）使用包含甲酚酚醛清漆树脂和交联剂的组合物形成牺牲膜，（B）将膜图案化为第一高能辐射，（C）显影，和（D）曝光 牺牲膜图案到第二高能量辐射和热处理，从而在甲酚酚醛清漆树脂内形成交联。

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