公开(公告)号：US06939472B2

公开(公告)日：2005-09-06

申请号：US10665998

申请日：2003-09-17

Applicant: Gregory P. Schaadt ,  Hongqin Shi

Inventor： Gregory P. Schaadt ,  Hongqin Shi

IPC: B01D20060101 ,  C23F1/00 ,  G01R31/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC classification number: B81C1/00595 ,  B81C2201/0132

Abstract: The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material. Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same. The time duration of the feeding cycles are individually adjustable.

Abstract translation: 本发明教导了使用一种或多种选择的自发气相蚀刻剂去除微结构制造中的牺牲材料的方法和装置。 所选择的蚀刻剂在进料循环序列的每个进料循环期间被送入包含微结构的蚀刻室，直到微结构的牺牲材料通过蚀刻剂和牺牲材料之间的化学反应排出。 具体地，在第一进料循环期间，将第一量的选择的自发气相蚀刻剂送入蚀刻室。 在第二进料循环中，将第二量的蚀刻剂送入蚀刻室。 所选择的蚀刻剂的第一量和第二量可以相同也可以不相同。 进料周期的持续时间可单独调节。

公开(公告)号：US20040238489A1

公开(公告)日：2004-12-02

申请号：US10841818

申请日：2004-05-06

Inventor： David Johnson ,  Russell Westerman

IPC: G01L021/30

CPC classification number: H01J37/32935 ,  B81C1/00587 ,  B81C2201/0132 ,  H01J37/32963 ,  H01L21/30655

Abstract: The present invention provides a method and an apparatus for establishing endpoint during an alternating cyclical etch process or time division multiplexed process. A substrate is placed within a plasma chamber and subjected to an alternating cyclical process having an etching step and a deposition step. A variation in plasma emission intensity is monitored using known optical emission spectrometry techniques. An amplitude information is extracted from a complex waveform of the plasma emission intensity using an envelope follower algorithm. The alternating cyclical process is discontinued when endpoint is reached at a time that is based on the monitoring step.

Abstract translation: 本发明提供了一种用于在交替循环蚀刻处理或时分复用过程中建立端点的方法和装置。 将衬底放置在等离子体室内并进行具有蚀刻步骤和沉积步骤的交替循环过程。 使用已知的光发射光谱技术监测等离子体发射强度的变化。 使用包络跟踪器算法从等离子体发射强度的复波形中提取幅度信息。 当基于监测步骤的时间达到端点时，停止交替循环过程。

公开(公告)号：US06781279B2

公开(公告)日：2004-08-24

申请号：US09873382

申请日：2001-06-05

Applicant: Jin-Ho Lee ,  Young-Chul Ko ,  Do-Hyun Kong

Inventor： Jin-Ho Lee ,  Young-Chul Ko ,  Do-Hyun Kong

IPC: H02H100

CPC classification number: B81C3/001 ,  B81B2201/033 ,  B81B2203/0136 ,  B81B2203/0181 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00142 ,  B81C2201/0132 ,  B81C2203/038 ,  Y10T29/42 ,  Y10T29/435

Abstract: A micro-actuator having a stage capable of a see-saw motion and a method for its manufacture are disclosed. In the micro-actuator according to the present invention, a plurality of parallel driving comb-type electrodes are formed on the bottom of the stage, and a plurality of parallel fixed comb-type electrodes are formed on a base plate. At both sides of the stage is a torsion bar that enables the see-saw motion. The torsion bar is supported by a frame comprised of a first frame layer and a second frame layer. The torsion bar and the first frame layer form one body. The first and second frame layers are bonded by a metal eutectic bonding layer between metal layers.

Abstract translation: 公开了一种具有能够进行跷跷板运动的平台的微致动器及其制造方法。 在本发明的微型致动器中，在台架的底部形成多个平行的驱动梳状电极，在基板上形成多个平行的固定梳状电极。 在舞台的两侧是一个扭杆，可以实现跷跷板的动作。 扭杆由包括第一框架层和第二框架层的框架支撑。 扭杆和第一框架层形成一体。 第一和第二框架层通过在金属层之间的金属共晶接合层结合。

公开(公告)号：US06767614B1

公开(公告)日：2004-07-27

申请号：US10021311

申请日：2001-12-19

Applicant: Wolfgang M. J. Hofmann ,  Hercules Neves ,  Noel C. MacDonald ,  Scott G. Adams

Inventor： Wolfgang M. J. Hofmann ,  Hercules Neves ,  Noel C. MacDonald ,  Scott G. Adams

IPC: B32B300

CPC classification number: B81C1/0015 ,  B81B2201/033 ,  B81B2203/0136 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0198 ,  Y10T428/13 ,  Y10T428/24273 ,  Y10T428/24562 ,  Y10T428/24744 ,  Y10T428/24802

Abstract: Improved fabrication processes for microelectromechanical structures, and unique structures fabricated by the improved processes are disclosed. In its simplest form, the fabrication process is a modification of the know SCREAM process, extended and used in such a way as to produce a combined vertical etch and release RIE process, which may be referred to as a “combination etch”. Fabrication of a single-level micromechanical structure using the process of the present invention includes a novel dry etching process to shape and release suspended single crystal silicon elements, the process combining vertical silicon reactive ion etching (Si-RIE) and release etches to eliminate the need to deposit and pattern silicon dioxide mask layers on the sides of suspended structures and to reduce the mechanical stresses in suspended structures caused by deposited silicon dioxide films.

Abstract translation: 公开了用于微机电结构的改进的制造工艺和通过改进的工艺制造的独特结构。 在其最简单的形式中，制造工艺是对已知SCREAM工艺的修改，扩展并以这样的方式使用，以便产生可被称为“组合蚀刻”的组合垂直蚀刻和释放RIE工艺。 使用本发明的方法制造单级微机械结构包括形成和释放悬浮的单晶硅元件的新型干蚀刻工艺，将垂直硅反应离子蚀刻（Si-RIE）和释放蚀刻相组合的工艺消除 需要在悬浮结构的两侧沉积并排列二氧化硅掩模层，并降低由沉积的二氧化硅膜引起的悬浮结构中的机械应力。

公开(公告)号：US20040099631A1

公开(公告)日：2004-05-27

申请号：US10715758

申请日：2003-11-18

Applicant: DELCO ELECTRONICS CORPORATION

Inventor： David Boyd Rich ,  John C. Christenson

IPC: H01L021/3065 ,  G01P015/02 ,  H01L021/304

CPC classification number: H01L21/67069 ,  B81B2201/025 ,  B81B2203/0118 ,  B81C1/00404 ,  B81C1/00587 ,  B81C2201/0132 ,  G01P15/0802 ,  G01P15/0888 ,  G01P15/125

Abstract: A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. A first general feature of the process is to define suspended structures with a DRIE process, such that the dimensions desired for the suspended structures are obtained. A second general feature is the proper location of specialized features, such as stiction bumps, vulnerable to erosion caused by the DRIE process. Yet another general feature is to control the environment surrounding suspended structures delineated by DRIE in order to obtain their desired dimensions. A significant problem identified and solved by the invention is the propensity for the DRIE process to etch certain suspended features at different rates. In addition to etching wider trenches more rapidly than narrower trenches, the DRIE process erodes suspended structures more rapidly at greater distances from anchor sites of the substrate being etched. At the masking level, the greater propensity for backside and lateral erosion of certain structures away from substrate anchor sites is exploited so that, at the completion of the etch process, suspended structures have acquired their respective desired widths.

Abstract translation: 用于通过深反应离子蚀刻（DRIE）工艺形成微机电系统（MEMS）器件的方法，在该方法中蚀刻覆盖空腔的衬底以形成破坏腔体以描绘悬浮结构的沟槽。 该过程的第一个一般特征是使用DRIE过程来定义悬挂结构，使得获得悬挂结构所需的尺寸。 第二个一般特征是专门功能的适当位置，例如粘性突变，易受DRIE过程引起的侵蚀。 另一个一般特征是控制由DRIE描绘的悬挂结构周围的环境，以便获得其期望的尺寸。 本发明识别和解决的一个重要问题是DRIE工艺以不同速率蚀刻某些悬挂特征的倾向。 除了比较窄的沟槽更快地蚀刻更宽的沟槽之外，DRIE工艺在距被蚀刻的衬底的锚定位置更远的距离处更快地侵蚀悬挂的结构。 在掩蔽层面，利用某些结构离开基底锚定位置的背面和侧向侵蚀的更大倾向，使得在蚀刻工艺完成时，悬挂结构已经获得了它们各自的期望宽度。

公开(公告)号：US20040053505A1

公开(公告)日：2004-03-18

申请号：US10247467

申请日：2002-09-18

Inventor： Jeffrey D. Chinn ,  Michael B. Rattner ,  James A. Cooper ,  Rolf A. Guenther

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B81C1/00626 ,  B81B2201/0214 ,  B81B2201/058 ,  B81C99/009 ,  B81C2201/0132 ,  H01L21/3065 ,  H01L21/3081

Abstract: Disclosed herein is an easy and well-integrated method of etching features to different depths in a crystalline substrate, such as a single-crystal silicon substrate. The method utilizes a specialized masking process and takes advantage of a highly selective etch process. The method provides a system of interconnected, variable depth reservoirs and channels. The plasma used to etch the channels may be designed to provide a sidewall roughness of about 200 nm or less. The resulting structure can be used in various MEMS applications, including biomedical MEMS and MEMS for semiconductor applications.

Abstract translation: 本文公开了一种在晶体衬底（例如单晶硅衬底）中对不同深度蚀刻特征的易于且良好集成的方法。 该方法利用专门的掩蔽过程并利用高选择性蚀刻工艺。 该方法提供了一个互连的，可变深度的储层和通道的系统。 用于蚀刻通道的等离子体可以设计成提供约200nm或更小的侧壁粗糙度。 所得结构可用于各种MEMS应用，包括用于半导体应用的生物医学MEMS和MEMS。

公开(公告)号：US20030153116A1

公开(公告)日：2003-08-14

申请号：US10319174

申请日：2002-12-13

Inventor： L. Richard Carley ,  Suresh Santhanam ,  Hsu Yu-Nu

IPC: H01L021/00 ,  H01L021/30 ,  H01L021/76 ,  H01L021/46

CPC classification number: B81B7/0077 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C1/00936 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2203/0136 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0828

Abstract: This invention comprises a process for fabricating a MEMS microstructure in a sealed cavity wherein the etchant entry holes are created as a by-product of the fabrication process without an additional step to etch holes in the cap layer. The process involves extending the layers of sacrificial material past the horizontal boundaries of the cap layer. The cap layer is supported by pillars formed by a deposition in holes etched through the sacrificial layers, and the etchant entry holes are formed when the excess sacrificial material is etched away, leaving voids between the pillars supporting the cap.

Abstract translation: 本发明包括一种在密封空腔中制造MEMS微结构的方法，其中蚀刻剂入口孔作为制造工艺的副产品而产生，而没有额外的步骤来蚀刻盖层中的孔。 该方法涉及将牺牲材料层延伸超过盖层的水平边界。 盖层由通过牺牲层蚀刻的孔中的沉积形成的柱支撑，并且当多余的牺牲材料被蚀刻掉时形成蚀刻剂入口孔，从而在支撑盖的支柱之间留下空隙。

公开(公告)号：US06593163B1

公开(公告)日：2003-07-15

申请号：US09707475

申请日：2000-11-07

Applicant: Wayne A. Bonin ,  Zine-Eddine Boutaghou ,  Roger L. Hipwell, Jr. ,  Barry D. Wissman ,  Lee Walter ,  Barbara J. Ihlow-Mahrer

Inventor： Wayne A. Bonin ,  Zine-Eddine Boutaghou ,  Roger L. Hipwell, Jr. ,  Barry D. Wissman ,  Lee Walter ,  Barbara J. Ihlow-Mahrer

IPC: H01L2100

CPC classification number: B81B3/0086 ,  B81B2203/033 ,  B81C2201/0132 ,  B81C2203/036 ,  H01L21/762 ,  H01L21/76224

Abstract: A method for filling a trench extending through a microelectromechanical system (MEMS) device patterned on a wafer is disclosed. The method involves simultaneously depositing a trench-fill layer of insulating material over a first side of the wafer, over a second side of the wafer, and into the trench extending from the first side to the second side. Further, the width of the trench at the first side of the wafer and/or the second side of the wafer is variable to adjust the rate at which the trench fills.

Abstract translation: 公开了一种用于填充延伸通过在晶片上图案化的微机电系统（MEMS）器件的沟槽的方法。 该方法包括在晶片的第一侧上，在晶片的第二侧上同时沉积绝缘材料的沟槽填充层，并且进入从第一侧延伸到第二侧的沟槽。 此外，在晶片的第一侧和/或晶片的第二面处的沟槽的宽度是可变的，以调整沟槽填充的速率。

公开(公告)号：US20020189350A1

公开(公告)日：2002-12-19

申请号：US09882569

申请日：2001-06-15

Inventor： Xiang Zheng Tu

IPC: G01P003/44 ,  G01P015/08

CPC classification number: G01P15/0802 ,  B81B3/007 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C1/00182 ,  B81C2201/0132 ,  G01C19/5719

Abstract: A micromachined vertical vibrating gyroscope consists of three single crystal silicon assemblies: an outer single crystal silicon assembly, an intermediate single crystal silicon assembly, and an inner single crystal silicon assembly. The outer assembly includes a plurality of arc-shaped anchors arranged in a circle and extending from a single crystal silicon substrate coated with an insulating annulus thereon. The intermediate assembly is a suspended wheel concentric with the arc-shaped anchors. The inner assembly is a suspended hub concentric with the circle formed by the anchors and having no axle at its center. The three assemblies are connected to each other through several flexures. The intermediate suspended wheel is driven into rotational vibration by lateral comb capacitors. Input angular rates are measured by two vertical capacitors. The gyroscope is fabricated utilizing a bipolar-compatible process comprising steps of buried layer diffusion, selective epitaxial growth and lateral overgrowth, deep reactive ion etching, and porous silicon processing.

Abstract translation: 微机械垂直振动陀螺仪由三个单晶硅组件组成：外单晶硅组件，中间单晶硅组件和内单晶硅组件。 外部组件包括多个弧形锚固件，其布置成圆形并从其上涂覆有绝缘环的单晶硅衬底延伸。 中间组件是与弧形锚固件同心的悬挂车轮。 内部组件是与由锚固件形成的圆同心的悬挂的毂，并且在其中心没有轴。 三个组件通过几个弯曲部彼此连接。 中间悬挂轮由横向梳状电容器驱动旋转振动。 输入角速率由两个垂直电容器测量。 使用双相兼容工艺制造陀螺仪，其包括埋层扩散，选择性外延生长和横向过度生长，深反应离子蚀刻和多孔硅处理的步骤。

公开(公告)号：US06436229B2

公开(公告)日：2002-08-20

申请号：US09741403

申请日：2000-12-19

Applicant: Yu-Chong Tai ,  Xuan-Oi Wang

Inventor： Yu-Chong Tai ,  Xuan-Oi Wang

IPC: B44C122

CPC classification number: B81C1/00531 ,  B81C99/0025 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J2237/3344 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/67069

Abstract: An apparatus and method for gas-phase bromine trifluoride (BrF3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF3 can be applied in a pulse mode and in a continuous flow mode. The etching rate in pulse mode is dependent on gas concentration, reaction pressure, pulse duration, pattern opening area and effective surface area.

Abstract translation: 用于体相和表面微加工的气相溴化三氟化硼（BrF 3）硅各向同性室温蚀刻系统的装置和方法。 气相BrF3可以以脉冲模式和连续流动模式施加。 脉冲模式下的蚀刻速率取决于气体浓度，反应压力，脉冲持续时间，图案开口面积和有效表面积。