公开(公告)号：US20060286297A1

公开(公告)日：2006-12-21

申请号：US11508514

申请日：2006-08-22

Applicant: Michael Bronikowski ,  Brian Hunt

Inventor： Michael Bronikowski ,  Brian Hunt

IPC: D01F9/12

CPC classification number: B81C1/00031 ,  B81B2203/0361 ,  B81C2201/0149 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/08 ,  C01B2202/36 ,  Y10S977/844

Abstract: A method of forming a periodic array of nano-scale objects using a block copolymer, and nano-scale object arrays formed from the method are provided. The method for forming the arrays generally includes the steps of depositing a block copolymer of at least two blocks on a substrate to form an ordered meso-scale structured array of the polymer materials, forming catalytic metal dots based on the meso-scale structure, and growing nano-scale objects on the catalytic dots to form an ordered array of nano-scale objects.

公开(公告)号：US07115305B2

公开(公告)日：2006-10-03

申请号：US10356299

申请日：2003-01-30

Applicant: Michael J. Bronikowski ,  Brian D. Hunt

Inventor： Michael J. Bronikowski ,  Brian D. Hunt

IPC: C23C16/26

CPC classification number: B81C1/00031 ,  B81B2203/0361 ,  B81C2201/0149 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/08 ,  C01B2202/36 ,  Y10S977/844

Abstract: A method of forming a periodic array of nano-scale objects using a block copolymer, and nano-scale object arrays formed from the method are provided. The method for forming the arrays generally includes the steps of depositing a block copolymer of at least two blocks on a substrate to form an ordered meso-scale structured array of the polymer materials, forming catalytic metal dots based on the meso-scale structure, and growing nano-scale objects on the catalytic dots to form an ordered array of nano-scale objects.

公开(公告)号：US20050255581A1

公开(公告)日：2005-11-17

申请号：US10525706

申请日：2003-08-22

Applicant: Hong Kim ,  Zhijun Sun

Inventor： Hong Kim ,  Zhijun Sun

IPC: B81B1/00 ,  C12M1/34 ,  C25D5/04 ,  C25D11/02 ,  G03F7/00 ,  G03F7/20 ,  H01L21/00 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/15

CPC classification number: H01L21/76816 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y30/00 ,  C25D5/04 ,  C25D11/02 ,  C25D11/022 ,  G03F7/0015 ,  G03F7/70408 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76879 ,  H01L27/1085 ,  H01L27/156

Abstract: An ordered, single domain nanopore array having a macroscale area in a first material is provided. A method of making a nanopore arrays with a controlled pattern include providing a substrate comprising a first surface having a first patter, depositing a first material capable of forming nanopores onto said first-surface having the first pattern, and anodically oxidizing said first material to form the nanopore array with the controlled pattern in the anodically oxidized first material.

Abstract translation: 提供了在第一材料中具有宏观区域的有序单畴纳米孔阵列。 制备具有受控图案的纳米孔阵列的方法包括提供包括具有第一图案的第一表面的基底，将能够形成纳米孔的第一材料沉积到具有第一图案的所述第一表面上，以及阳极氧化所述第一材料以形成 在阳极氧化的第一材料中具有受控图案的纳米孔阵列。

公开(公告)号：US20180282150A1

公开(公告)日：2018-10-04

申请号：US15476830

申请日：2017-03-31

Applicant: Palo Alto Research Center Incorporated

Inventor： Jeng Ping Lu ,  Eugene M. Chow ,  David K. Biegelsen ,  Sourobh Raychaudhuri

IPC: B81C1/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/027 ,  H01L21/06 ,  H01L29/06 ,  H01L31/0236 ,  H01L31/0352

CPC classification number: H01L29/0665 ,  B01J2219/00648 ,  B01J2219/00653 ,  B01J2219/00659 ,  B81B2203/04 ,  B81B2207/056 ,  B81C3/005 ,  B81C2201/0149 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/06 ,  H01L24/06 ,  H01L31/0352 ,  Y02E10/50

Abstract: An electrode array including a substrate. The electrode array includes a first plurality of electrodes disposed above a first zone of the substrate, wherein the first plurality of electrodes has a first range of spacing. The electrode array further includes a second plurality of electrodes disposed above a second zone of the substrate, wherein the second plurality of electrodes has a second range of spacing that is less than the first range of spacing.

公开(公告)号：US20180242465A1

公开(公告)日：2018-08-23

申请号：US15441146

申请日：2017-02-23

Applicant: Lawrence Livermore National Security, LLC

Inventor： Anna Hiszpanski ,  Thomas Yong-Jin Han ,  Carla Lim Watson ,  Timothy Dexter Yee

IPC: H05K3/46 ,  H01B1/22 ,  H01B1/24 ,  H05K1/02 ,  H01B13/00 ,  H05K3/02

CPC classification number: C09K13/00 ,  B81C1/00031 ,  B81C1/00126 ,  B81C1/00206 ,  B81C1/00484 ,  B81C1/00531 ,  B81C2201/0149 ,  B81C2201/0194 ,  B82Y40/00 ,  H01B1/22 ,  H01B1/24 ,  H01L31/022466 ,  H01L31/1884 ,  H05K1/0274 ,  H05K2201/0108 ,  H05K2201/026 ,  Y10S977/888

Abstract: According to one embodiment, a method for creating a metal nanowire mesh the method includes forming a first layer of block copolymer, causing the block copolymer to become aligned in approximately straight lines, infiltrating one phase of the block copolymer with a metal, and removing the block copolymer where the metal remains after the block copolymer is removed. Furthermore, the method includes forming a second layer of block copolymer, causing the block copolymer in the second layer to become ordered in approximately straight lines oriented at an angle from greater than 0 degrees to 90 degrees from a mean direction of longitudinal axes of the remaining metal, infiltrating one phase of the block copolymer in the second layer with a second metal, and removing the block copolymer in the second layer where the second metal remains above the metal after the block copolymer in the second layer is removed.

公开(公告)号：US10018915B2

公开(公告)日：2018-07-10

申请号：US15208316

申请日：2016-07-12

Applicant: Toshiba Memory Corporation

Inventor： Kazuto Matsuki ,  Ryoichi Suzuki ,  Shinichi Ito ,  Seiji Morita

IPC: G03F7/004 ,  G03F7/40 ,  G03F7/16 ,  H01L21/3105 ,  B82Y40/00 ,  B81C1/00 ,  H01L21/308 ,  B82Y10/00 ,  G03F7/00 ,  H01L21/027 ,  H01L21/311

CPC classification number: G03F7/168 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/038 ,  G03F7/2059 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/3086 ,  H01L21/31058 ,  H01L21/31144

Abstract: A pattern forming method includes forming a guide pattern on a substrate including first and second regions and applying a directed self-assembly material including a first and a second polymer portion to the substrate. The first region is irradiated with an energy beam. The substrate is subjected to a heating process after irradiation and the directed self-assembly material in the second region separates into a first polymer phase and a second polymer phase. The directed self-assembly material is removed from the first region after irradiation.

公开(公告)号：US20180192524A1

公开(公告)日：2018-07-05

申请号：US15396067

申请日：2016-12-30

Applicant: JSR CORPORATION

Inventor： Hitoshi OSAKI

IPC: H05K3/42 ,  B05D1/00 ,  B05D3/02 ,  G03F7/00 ,  B05D3/10

CPC classification number: H01L21/477 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/027 ,  H01L21/76205 ,  H05K3/061 ,  Y10S438/942

Abstract: A contact hole pattern-forming method includes forming a hole pattern on a front face side of a substrate, directly or via other layer. A first composition including a first polymer is applied circularly in a planar view so as to coat lateral faces of holes of the hole pattern. A resin layer is provided on the front face side of the substrate and inside the lateral faces of the holes from a second composition including a second polymer. The resin layer is heated. A part of the resin layer heated is removed. The substrate is etched using a resist pattern formed. The first polymer includes a group being bound to at least one end of a main chain of the first polymer, and being capable of interacting with a third polymer constituting the hole pattern. The second polymer is a homopolymer or a random copolymer.

公开(公告)号：US20180144928A1

公开(公告)日：2018-05-24

申请号：US15875788

申请日：2018-01-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tsung-Han Ko ,  Ching-Yu Chang ,  Kuan-Hsin Lo

IPC: H01L21/027 ,  H01L21/02 ,  G03F7/00 ,  H01L21/311

CPC classification number: H01L21/0271 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/02315 ,  H01L21/02318 ,  H01L21/02356 ,  H01L21/31138

Abstract: Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a substrate; applying an orientation material that includes a first polymer and a second polymer over the substrate, wherein the first polymer has a first activation energy and the second polymer has a second activation energy; baking the substrate at first temperature thereby forming a first orientation layer that includes the first polymer; baking the substrate at second temperature thereby forming a second orientation layer that includes the second polymer; and performing a directed self-assembly (DSA) process over the first and the second orientation layers.

公开(公告)号：US20180072564A1

公开(公告)日：2018-03-15

申请号：US15653318

申请日：2017-07-18

Applicant: TOKYO OHKA KOGYO CO., LTD. ,  NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY

Inventor： Ken MIYAGI ,  Takehiro SESHIMO ,  Takaya MAEHASHI ,  Takahiro DAZAI ,  Hitoshi YAMANO ,  Toshifumi SATOH ,  Takuya ISONO

IPC: B81C1/00 ,  B05D3/14 ,  B05D3/02 ,  B05D7/00 ,  C08F212/08 ,  C08F230/08 ,  C08F297/02

CPC classification number: B81C1/00031 ,  B05D3/02 ,  B05D3/148 ,  B05D7/56 ,  B81C1/00531 ,  B81C2201/0149 ,  C08F8/32 ,  C08F212/08 ,  C08F230/08 ,  C08F297/026 ,  G03F7/0002

Abstract: A resin composition for forming a phase-separated structure includes a block copolymer having a block (b1) having a repeating structure of styrene units; a block (b2) having a repeating structure of methyl methacrylate units partially substituted with a constituent unit represented by general formula (h1); and a number average molecular weight of less than 28,000. In general formula (h1), Rh0 is a hydrophilic functional group.

公开(公告)号：US09903991B2

公开(公告)日：2018-02-27

申请号：US14623708

申请日：2015-02-17

Applicant: Samsung Display Co., Ltd.

Inventor： Eun Ae Kwak ,  Min Hyuck Kang ,  Moon Gyu Lee

IPC: G02B5/30 ,  C09K13/00 ,  C23F4/00 ,  H01L21/308 ,  G02F1/1335 ,  H01L21/3065 ,  B81C1/00 ,  G03F7/004 ,  H01L21/306

CPC classification number: G02B5/3058 ,  B81C1/00388 ,  B81C1/00404 ,  B81C2201/0149 ,  C09K13/00 ,  C23F4/00 ,  G02F2001/133548 ,  G03F7/0041 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/3088

Abstract: A method of fabricating a wire grid polarizer includes sequentially depositing a conductive wire pattern layer, and a plurality of guide patterns which forms one or more trenches therebetween on the conductive wire pattern layer, hydrophobically treating surfaces of the conductive wire pattern layer exposed in the trenches, and the guide patterns, coating the hydrophobically treated conductive wire pattern layer in the trenches with a neutral layer to partially fill the trenches, filling a remainder of the trenches with a block copolymer of two monomers with different etching rates, aligning the block copolymer filled in the trenches, selectively removing blocks of one monomer among the two monomers from the aligned block copolymer, and patterning the conductive wire pattern layer by using blocks of the other monomer among the two monomers remaining in the trenches and the guide patterns as a mask.