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公开(公告)号:US20180180472A1
公开(公告)日:2018-06-28
申请号:US15846296
申请日:2017-12-19
Applicant: SICK AG
Inventor: Klaus CLEMENS , Gottfried HUG , Stefan SEITZ
IPC: G01J1/44
CPC classification number: G01J1/44 , G01J2001/4238 , G01J2001/442 , G01J2001/4466 , G01S7/4816 , G01S7/4861 , G01S7/4863 , G01S7/4868 , G01S17/08 , G01S17/89 , G06K7/10851 , H04B10/616 , H04B10/691
Abstract: A light receiver (100), comprising: a plurality of avalanche photodiode elements (10) each being biased with a bias voltage above a breakdown voltage and thus operated in a Geiger mode in order to trigger a Geiger current upon light reception and a plurality of readout circuits (42, 44, 46) associated with individual avalanche photodiode elements (10) or a group of avalanche photodiode elements (10) for reading out a Geiger current generated upon light reception, wherein the readout circuits (42, 44, 46) each comprise a measurement path (42) and a blanking path (46) as well as a switching element (44) for selectively supplying the Geiger current, or a measurement current corresponding to the Geiger current, to the measurement path (42) or the blanking path (46).
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公开(公告)号:US20180094971A1
公开(公告)日:2018-04-05
申请号:US15689267
申请日:2017-08-29
Inventor: DAVID M. RUTTER , ALAN H. BAND
CPC classification number: G01J1/0228 , G01J1/08 , G01J1/44 , G01J2001/442 , G01J2001/444 , G01J2001/4466
Abstract: A protector to protect a photon detector includes: a pulse rate comparator and a latcher, wherein the latcher latches to a set signal from the pulse rate comparator and protects the photon detector from detecting photons when the latch signal includes a latch protect level.
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公开(公告)号:US20180019268A1
公开(公告)日:2018-01-18
申请号:US15213082
申请日:2016-07-18
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor: Bowei Zhang , Vincent Venezia , Gang Chen , Dyson H. Tai , Duli Mao
IPC: H01L27/144 , H01L31/107 , H01L31/0232
CPC classification number: H01L27/1443 , G01J2001/442 , H01L27/14603 , H01L27/1464 , H01L31/02027 , H01L31/02327 , H01L31/107
Abstract: A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.
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公开(公告)号:US20170357061A1
公开(公告)日:2017-12-14
申请号:US15442958
申请日:2017-02-27
Applicant: Kabushiki Kaisha Toshiba
Inventor: Andrew James SHIELDS , Zakaria MOKTADIR
CPC classification number: G02B6/4203 , G01J1/0425 , G01J1/44 , G01J2001/442 , G01J2001/4466 , G02B6/02042 , G02B6/4295 , H04B10/70 , H04L9/0852
Abstract: A photon detection device, configured to couple to a multicore optical fibre, the device comprising a plurality of detection regions, each detection region being arranged to align with just a single core of the multicore optical fibre when the device is coupled to the multicore optical fibre.
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公开(公告)号:US20170356797A1
公开(公告)日:2017-12-14
申请号:US15689682
申请日:2017-08-29
Applicant: AT&T Intellectual Property I, L.P.
Inventor: Michael Brodsky , Cristian Antonelli , Jungmi Oh
CPC classification number: G01J1/44 , G01J1/08 , G01J1/42 , G01J2001/442 , G01J2001/4466
Abstract: Operational parameters of a single-photon detector are determined with a continuous wave laser source. At a fixed trigger, a dark count probability and a series of count probabilities at different optical powers are determined. A particular optical power is selected by using a wide-range variable attenuator to attenuate the optical power of the continuous wave laser. The dark count probability and the count probabilities are determined for different trigger rates. The operational parameters include efficiency, afterpulsing constant, and detrap time. The operational parameters are computed by fitting the computed dark count probabilities and count probabilities to a user-defined relationship.
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公开(公告)号:US09799817B2
公开(公告)日:2017-10-24
申请号:US15279008
申请日:2016-09-28
Applicant: RAYTHEON BBN TECHNOLOGIES CORP.
Inventor: Kin Chung Fong , Thomas A. Ohki
CPC classification number: H01L39/223 , G01J1/42 , G01J1/44 , G01J5/20 , G01J2001/442 , G01J2001/4446 , H01L29/1606
Abstract: A detector for detecting single photons of infrared radiation or longer wavelength electromagnetic radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be adjacent a graphene sheet and configured so that evanescent waves from the waveguide overlap the graphene sheet. In other embodiments a transmission line or antenna is coupled to the graphene sheet and guides longer-wavelength photons to the graphene sheet. A photon absorbed by the graphene sheet heats the graphene sheet. Part of the graphene sheet is part of the Josephson junction as the weak link, and a constant bias current is driven through the Josephson junction; an increase in the temperature of the graphene sheet results in a decrease in the critical current of the Josephson junction and a voltage pulse in the voltage across the Josephson junction. The voltage pulse is detected by the pulse detector.
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公开(公告)号:US09696440B2
公开(公告)日:2017-07-04
申请号:US14627436
申请日:2015-02-20
Applicant: General Electric Company
Inventor: Arie Shahar , Mark David Fries , Yaron Glazer , Jeffrey Michael Levy , Avishai Ofan , Rotem Har-Lavan
IPC: H01L27/146 , G01T7/00 , G01T1/24 , G01J1/42 , G01J1/44
CPC classification number: G01T7/005 , G01J1/4228 , G01J2001/442 , G01T1/249
Abstract: A radiation detector assembly is provided including a semiconductor detector, pixelated anodes, and at least one processor. The pixelated anodes are disposed on a surface of the semiconductor detector, and configured to generate a primary signal responsive to reception of a photon and a secondary signal responsive to an induced charge caused by reception of a photon by at least one adjacent anode. The at least one processor is operably coupled to the pixelated anodes, and configured to define sub-pixels for each pixelated anode; acquire primary signals and secondary signals from the pixelated anodes; determine sub-pixel locations for acquisition events using the primary and secondary signals; generate a sub-pixel energy spectrum for each sub-pixel; apply at least one energy calibration parameter to adjust the sub-pixel energy spectra for each pixelated anode; and, for each pixelated anode, combine the adjusted sub-pixel energy spectra to provide a pixelated anode spectrum.
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108.
公开(公告)号:US20170176250A1
公开(公告)日:2017-06-22
申请号:US14977259
申请日:2015-12-21
Inventor: Bruce Rae , Ivan Ivanov
IPC: G01J1/44 , H01L27/146 , H01L31/107
CPC classification number: H01L27/14683 , G01J2001/442 , G01J2001/4466 , G01J2001/448 , H01L27/14609 , H01L27/14636 , H01L27/14643
Abstract: A device includes an array of single photon avalanche diodes (SPADs) and a plurality of pulse shapers. Each of the SPADs are electrically coupled to a respective SPAD quench circuit. Each of the pulse shapers have an input electrically coupled to an output of a respective SPAD quench circuit.
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公开(公告)号:US09666743B2
公开(公告)日:2017-05-30
申请号:US15242381
申请日:2016-08-19
Applicant: RAYTHEON BBN TECHNOLOGIES CORP.
Inventor: Kin Chung Fong , Thomas A. Ohki
IPC: H01L31/109 , G01J1/42 , G01J5/20 , H01L29/16 , H01L31/0304 , H01L39/22 , G01J1/44
CPC classification number: H01L31/109 , G01J1/42 , G01J1/4257 , G01J1/44 , G01J5/20 , G01J2001/442 , G01J2001/4446 , H01L29/1606 , H01L31/03044 , H01L39/223
Abstract: A detector for detecting single photons of infrared radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be adjacent a graphene sheet and configured so that evanescent waves from the waveguide overlap the graphene sheet. In some embodiments the waveguide is omitted and infrared light propagating in free space illuminates the graphene sheet directly. A photon absorbed by the graphene sheet from the evanescent waves heats the graphene sheet. The graphene sheet is coupled to the weak link of a Josephson junction, and a constant bias current is driven through the Josephson junction, so that an increase in the temperature of the graphene sheet results in a decrease in the critical current of the Josephson junction and a voltage pulse in the voltage across the Josephson junction. The voltage pulse is detected by the pulse detector.
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公开(公告)号:US09625310B2
公开(公告)日:2017-04-18
申请号:US14569002
申请日:2014-12-12
Applicant: General Electric Company
Inventor: Jean-Paul Bouhnik , Yaron Hefetz
CPC classification number: G01J1/4228 , G01J2001/442 , G01T1/164 , G01T1/1647
Abstract: A system includes a detector and a main processing unit having an event processing module. The detector includes pixels to detect an event corresponding to photon absorption. The event processing module is configured to read event information for each event detected by each pixel of the detector in order of receipt from the detector and to compare an energy level value in the event information for each event to a predetermined range of energy level values. An event is counted when the energy level value is within the predetermined range of energy level values. For each event having an energy level below the predetermined range, the energy level value for a next consecutive event in the received event information is read and a combined energy level value of the event and the next consecutive event is determined as well as the pixel locations of the event and the next consecutive event. The combined energy level is counted as a single event when the combined energy level value is within a predetermined range of energy level values and when the pixel location for the event is near a pixel location for the next consecutive event. At least one pixel location is assigned to the single event.
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