公开(公告)号：US07088033B2

公开(公告)日：2006-08-08

申请号：US10997603

申请日：2004-11-24

Applicant: Robert T. Chandler ,  Oleg Popov ,  Jakob Maya

Inventor： Robert T. Chandler ,  Oleg Popov ,  Jakob Maya

IPC: H01J1/02

CPC classification number: H05B41/24

Abstract: An electrodeless lamp includes a bulbous lamp envelope enclosing an inert gas and a vaporizable metal fill, the lamp envelope having a reentrant cavity and an envelope bottom, an electromagnetic coupler positioned within the reentrant cavity, and a thermal shield positioned in proximity to the envelope bottom and configured to increase the temperature of the envelope bottom. By increasing the temperature of the envelope bottom, a cold spot is prevented. As a result, light output at low temperatures is comparable to light output at room temperature.

Abstract translation: 无电极灯包括包围惰性气体的球状灯管和可汽化的金属填充物，灯壳具有可折入的空腔和封套底部，位于折入腔内的电磁耦合器和位于封套底部附近的热屏蔽 并且被配置为增加信封底部的温度。 通过增加信封底部的温度，可以防止冷点。 结果，低温下的光输出与室温下的光输出相当。

公开(公告)号：US20060145582A1

公开(公告)日：2006-07-06

申请号：US11029707

申请日：2005-01-05

Applicant: William Huber

Inventor： William Huber

IPC: H01J1/14 ,  H01J1/02 ,  H01J1/05 ,  H01J9/04

CPC classification number: H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2329/00

Abstract: In a field emitter (100) including a substrate (110), the substrate (110) has a substantially non-conductive top substrate surface (112). A conductive cathode member (130) is disposed on the top substrate surface (112) and has a top cathode surface (132). A conductive gate member (120) is disposed on the top substrate surface (112) and is substantially coplanar with the cathode member (130). An emitter structure (140) extends away from the top cathode surface (132). The gate member (120) is spaced apart from the cathode member (130) at a distance so that when a predetermined potential is applied between the cathode member (130) and gate member (120), the emitter structure (140) will emit electrons.

Abstract translation: 在包括衬底（110）的场发射器（100）中，衬底（110）具有基本不导电的顶部衬底表面（112）。 导电阴极部件（130）设置在顶部基板表面（112）上并具有顶部阴极表面（132）。 导电门构件（120）设置在顶部衬底表面（112）上，并且与阴极构件（130）基本共面。 发射极结构（140）远离顶部阴极表面（132）延伸。 门构件（120）与阴极构件（130）间隔一定距离，使得当在阴极构件（130）和栅极构件（120）之间施加预定电位时，发射极结构（140）将发射电子 。

公开(公告)号：US07057345B2

公开(公告)日：2006-06-06

申请号：US10618615

申请日：2003-07-15

Applicant: Yasuro Kikuchi ,  Yoichiro Higashimoto ,  Takeo Matsushima

Inventor： Yasuro Kikuchi ,  Yoichiro Higashimoto ,  Takeo Matsushima

IPC: H01J1/46 ,  H01J1/02

CPC classification number: H01J61/545

Abstract: A short arc discharge lamp has improved starting properties in which there is no danger of damaging the arc tube that surrounds a discharge space and in which the radiant light from the arc tube is not adversely shielded. This is achieved by providing the short arc discharge lamp with a first electrode having an electrical potential and to which a high voltage is applied, and a second electrode opposite the first at a in spaced relationship. Additionally, in the discharge space, there is positioned at least one conductive component with a tip projecting into the discharge space. The conductive component has an electrical potential which is identical to the electrical potential of the first electrode and has a tip spaced a distance from the second electrode which is greater than the distance between the first and the second electrode.

Abstract translation: 短弧放电灯具有改善的启动特性，其中不存在损坏围绕放电空间的电弧管的危险，并且其中来自电弧管的辐射光没有被不利地屏蔽。 这通过提供具有电位的第一电极并且施加高电压的短电弧放电灯和与第一电极相对的第二电极以间隔开的关系来实现。 此外，在放电空间中，设置至少一个导电部件，其中尖端突出到放电空间中。 导电部件具有与第一电极的电位相同的电位，并且具有与第二电极间隔一定距离的尖端，其大于第一和第二电极之间的距离。

公开(公告)号：US20060076866A1

公开(公告)日：2006-04-13

申请号：US10544227

申请日：2004-02-03

Applicant: Yoshinori Terui ,  Ryozo Nonogaki

Inventor： Yoshinori Terui ,  Ryozo Nonogaki

IPC: H01J1/02

CPC classification number: H01J37/06 ,  H01J1/14 ,  H01J1/3044 ,  H01J2237/06308 ,  H01J2237/06316

Abstract: To provide an electron source to be used for a surface analyzer such as a scanning or transmission electron microscope or an Auger electron spectroscope, or an electron beam lithography machine, particularly for a semiconductor wafer inspection apparatus such as a scanning electron microscope to be used at a low acceleration with an electron beam acceleration voltage of up to 1 kV, CD SEM or DR SEM. An electron source wherein a barium supplying source consisting of a complex oxide comprising barium oxide and an oxide of metal other than barium, is provided at a portion of a single crystal needle of tungsten or molybdenum.

公开(公告)号：US20060043861A1

公开(公告)日：2006-03-02

申请号：US10929123

申请日：2004-08-27

Applicant: Wei Liu

Inventor： Wei Liu

IPC: H01J1/02 ,  H01J9/04 ,  H01J1/05

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00

Abstract: An improved process for growing carbon nanotubes includes steps of providing a glass substrate that has a porous surface, depositing a catalyst into the pores on the porous surface, and growing carbon nanotubes on the substrate. Desirably, the carbon nanotubes are grown using a chemical vapor deposition technique in which the direction of flow of a carbon precursor gas (and any optional diluent gases) is aligned with the desired direction of growth propagation. The techniques of the invention provide a field emission device having more uniformly aligned carbon nanotubes and/or more uniformly sized carbon nanotubes.

Abstract translation: 用于生长碳纳米管的改进方法包括提供具有多孔表面的玻璃基底，在多孔表面上的孔中沉积催化剂和在基底上生长碳纳米管的步骤。 期望地，使用化学气相沉积技术来生长碳纳米管，其中碳前体气体（和任何任选的稀释气体）的流动方向与所需的生长传播方向对准。 本发明的技术提供了具有更均匀排列的碳纳米管和/或更均匀尺寸的碳纳米管的场致发射器件。

公开(公告)号：US20050282399A1

公开(公告)日：2005-12-22

申请号：US10871938

申请日：2004-06-17

Applicant: David Evans ,  John Hartzell

Inventor： David Evans ,  John Hartzell

IPC: C23C18/16 ,  C23C18/54 ,  C25D1/04 ,  C25D5/02 ,  C25D5/54 ,  G02F1/13 ,  H01L21/288 ,  H01L21/768 ,  H01J1/02 ,  H01L21/31 ,  H01L21/44 ,  H01L21/469

CPC classification number: H01L21/288 ,  C23C18/1605 ,  C23C18/165 ,  C23C18/1657 ,  C25D1/003 ,  C25D5/022 ,  C25D5/50 ,  H01L21/2885 ,  H01L21/76885

Abstract: A method is provided for electroforming metal integrated circuit structures. The method comprises: forming an opening such as a via or line through an interlevel insulator, exposing a substrate surface; forming a base layer overlying the interlevel insulator and substrate surface; forming a strike layer overlying the base layer; forming a top layer overlying the strike layer; selectively etching to remove the top layer overlying the substrate surface, exposing a strike layer surface; and, electroforming a metal structure overlying the strike layer surface. The electroformed metal structure is deposited using an electroplating or electroless deposition process. Typically, the metal is Cu, Au, Ir, Ru, Rh, Pd, Os, Pt, or Ag. The base, strike, and top layers can be deposited using physical vapor deposition (PVD), evaporation, reactive sputtering, or metal organic chemical vapor deposition (MOCVD).

Abstract translation: 提供了一种电铸金属集成电路结构的方法。 该方法包括：通过层间绝缘体形成诸如通孔或线的开口，暴露衬底表面; 形成覆盖层间绝缘体和衬底表面的基层; 形成覆盖基层的冲击层; 形成覆盖所述冲击层的顶层; 选择性蚀刻以去除覆盖在衬底表面上的顶层，暴露出一层击打层表面; 并且电铸在覆盖着撞击层表面的金属结构。 使用电镀或无电沉积工艺沉积电铸金属结构。 通常，金属是Cu，Au，Ir，Ru，Rh，Pd，Os，Pt或Ag。 可以使用物理气相沉积（PVD），蒸发，反应溅射或金属有机化学气相沉积（MOCVD）来沉积基底，打击和顶层。

公开(公告)号：US20050266765A1

公开(公告)日：2005-12-01

申请号：US11167695

申请日：2005-06-27

Applicant: Kanwal Raina ,  Benham Moradi

Inventor： Kanwal Raina ,  Benham Moradi

IPC: H01J1/02 ,  H01J1/304 ,  H01J1/62 ,  H01J9/02 ,  H01J19/02 ,  H01J63/04

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

公开(公告)号：US20050266322A1

公开(公告)日：2005-12-01

申请号：US11174891

申请日：2005-07-01

Applicant: Sang Choi ,  Dae Kim

Inventor： Sang Choi ,  Dae Kim

IPC: G02B3/00 ,  H01J1/02 ,  H01J3/18 ,  H01J9/02 ,  H01J9/14 ,  H01J37/12

CPC classification number: H01J9/02 ,  H01J3/18 ,  H01J9/14 ,  H01J37/12 ,  H01J2237/1205 ,  H01J2237/3175 ,  H01J2237/31754 ,  Y10T29/49117

Abstract: Provided is an electron beam lens for a micro-column electron beam apparatus and a method of manufacturing the same. A photosensitive glass substrate is used as a base isolation substrate and a thin metal film is grown by a plating method. Holes through which electron beam passes are formed by a lift off method after forming a resist pattern shaped as a hole on a seed metal layer and plating the thin metal film.

公开(公告)号：US20050264985A1

公开(公告)日：2005-12-01

申请号：US11138439

申请日：2005-05-27

Applicant: Sok-San Kim ,  Won-Kyu Bang

Inventor： Sok-San Kim ,  Won-Kyu Bang

IPC: G09F9/00 ,  G06F1/16 ,  H01J1/02 ,  H01J7/24 ,  H01J61/52 ,  H01K1/58 ,  H05K5/00 ,  H05K5/02 ,  H05K7/00

CPC classification number: H05K5/02

Abstract: A plasma display device including a plasma display panel for displaying images, a chassis base coupled to the plasma display panel, a reinforcing member coupled to the chassis base, and a supporting member coupled to the reinforcing member.

Abstract translation: 一种等离子体显示装置，包括用于显示图像的等离子体显示面板，耦合到等离子体显示面板的底座基座，联接到底座的加强构件和联接到加强构件的支撑构件。

公开(公告)号：US20050258739A1

公开(公告)日：2005-11-24

申请号：US11130264

申请日：2005-05-17

Applicant: Young-Jun Park ,  Yong-Wan Jin ,  In-Taek Han

Inventor： Young-Jun Park ,  Yong-Wan Jin ,  In-Taek Han

IPC: H01J31/12 ,  H01J1/02 ,  H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J29/48

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J29/481 ,  H01J2201/30469

Abstract: A field emission device and a field emission display (FED) using the same and a method of making the field emission device. The FED includes a glass substrate, a layer of a material formed on the glass substrate and having a concave portion, a cathode electrode formed on the material layer and also having a concave portion, electron emitters formed on the concave portion of the cathode electrode, a gate insulating layer formed on the cathode electrode and having a cavity communicating with the concave portion, and a gate electrode formed on the gate insulating layer and having a gate aperture aligned with the cavity.

Abstract translation: 场发射器件和使用其的场致发射显示器（FED）以及制造场致发射器件的方法。 FED包括玻璃基板，形成在玻璃基板上的具有凹部的材料层，形成在材料层上的阴极，还具有凹部，形成在阴极电极的凹部上的电子发射体， 形成在所述阴极电极上且具有与所述凹部连通的空腔的栅极绝缘层，以及形成在所述栅极绝缘层上并具有与所述空腔对准的栅极孔的栅电极。