公开(公告)号：US20090189508A1

公开(公告)日：2009-07-30

申请号：US12341803

申请日：2008-12-22

Applicant: Jae-Sang Ha ,  Sang-Jin Lee

Inventor： Jae-Sang Ha ,  Sang-Jin Lee

IPC: H01J1/00

CPC classification number: H01J3/021 ,  H01J63/02 ,  H01J63/06 ,  H01J2203/022 ,  H01J2203/0224

Abstract: A backlight unit includes a base substrate and a first electrode which is formed on the base substrate in a line. An electron emission layer is formed on the first electrode in the substantially same pattern as the first electrode. A second electrode supporter is formed on the base substrate and disposed on sides of the first electrode and the electron emission layer. A second electrode is formed on the second electrode supporter and has an aperture pattern. A third electrode is formed on the front substrate for accelerating electrons emitted from the electron emission layer. A phosphor layer is formed on the third electrode responsive to electrons accelerated by the third electrode.

Abstract translation: 背光单元包括基底基板和在基底基板上一行形成的第一电极。 以与第一电极基本相同的图案形成在第一电极上的电子发射层。 第二电极支撑件形成在基底基板上并且设置在第一电极和电子发射层的侧面上。 第二电极形成在第二电极支撑件上并具有孔径图案。 第三电极形成在前基板上，用于加速从电子发射层发射的电子。 响应于被第三电极加速的电子，在第三电极上形成荧光体层。

公开(公告)号：US20090185661A1

公开(公告)日：2009-07-23

申请号：US12113726

申请日：2008-05-01

Applicant: Yun Zou ,  Mark E. Vermilyea ,  Louis Paul Inzinna ,  Antonio Caiafa

Inventor： Yun Zou ,  Mark E. Vermilyea ,  Louis Paul Inzinna ,  Antonio Caiafa

IPC: H01J35/06 ,  H05B37/02

CPC classification number: H01J3/021 ,  H01J1/30 ,  H01J1/3048 ,  H01J3/027 ,  H01J35/065 ,  H01J35/14 ,  H01J2201/319 ,  H01J2203/0204 ,  H01J2235/062 ,  H01J2235/068

Abstract: A system and method for addressing individual electron emitters in an emitter array is disclosed. The system includes an emitter array comprising a plurality of emitter elements arranged in a non-rectangular layout and configured to generate at least one electron beam and a plurality of extraction grids positioned adjacent to the emitter array, each extraction grid being associated with at least one emitter element to extract the at least one electron beam therefrom. The field emitter array system also includes a plurality of voltage control channels connected to the plurality of emitter elements and the plurality of extraction grids such that each of the emitter elements and each of the extraction grids is individually addressable. In the field emitter array system, the number of voltage control channels is equal to the sum of a pair of integers closest in value whose product equals the number of emitter elements.

Abstract translation: 公开了一种用于寻址发射极阵列中的各个电子发射体的系统和方法。 该系统包括发射器阵列，其包括以非矩形布局布置的多个发射体元件，并且被配置为产生至少一个电子束和邻近发射器阵列定位的多个提取栅格，每个提取栅格与至少一个 发射极元件从其中提取至少一个电子束。 场发射器阵列系统还包括连接到多个发射体元件和多个提取栅格的多个电压控制通道，使得每个发射极元件和每个提取栅格可单独寻址。 在场发射极阵列系统中，电压控制通道的数量等于产品等于发射极元件数量的最接近值的一对整数之和。

公开(公告)号：US07556550B2

公开(公告)日：2009-07-07

申请号：US11292408

申请日：2005-11-30

Applicant: Emmett M. Howard ,  Kenneth A. Dean ,  Dirk C. Jordan

Inventor： Emmett M. Howard ,  Kenneth A. Dean ,  Dirk C. Jordan

IPC: H01J9/00

CPC classification number: H01J9/025 ,  H01J3/021 ,  H01J9/148 ,  H01J29/481

Abstract: A method is provided for preventing electron emission from a sidewall (34) of a gate electrode (20) and the edge (28) of the gate electrode stack of a field emission device (10), the gate electrode (20) having a surface (24) distally disposed from an anode (40) and a side (26) proximate to emission electrodes (38). The method comprises growing dielectric material (22) over the surface (24) and side (26) of the gate electrode (20), and performing an anisotropic etch (32) normal to the surface (24) to remove the dielectric material (22) from the surface (24) and leaving at least a portion of the dielectric material (22) on the side (26) of the gate electrode (20) and edge (28) of the gate electrode stack.

Abstract translation: 提供了一种防止来自栅极电极（20）的侧壁（34）和场致发射器件（10）的栅极电极堆叠的边缘（28）的电子发射的方法，栅电极（20）具有表面 （40）和靠近发射电极（38）的侧面（26）远离地设置的（24）。 该方法包括在栅电极（20）的表面（24）和侧面（26）上方生长电介质材料（22），并且执行垂直于表面（24）的各向异性蚀刻（32）以移除电介质材料 ），并且在栅电极（20）的侧面（26）和栅极电极叠层的边缘（28）上留下介电材料（22）的至少一部分。

公开(公告)号：US07517710B2

公开(公告)日：2009-04-14

申请号：US11604731

申请日：2006-11-28

Applicant: Jun-Hee Choi ,  Ho-Suk Kang ,  Chan-Wook Baik ,  Ha-Jong Kim

Inventor： Jun-Hee Choi ,  Ho-Suk Kang ,  Chan-Wook Baik ,  Ha-Jong Kim

IPC: H01L21/00 ,  H01L29/06

CPC classification number: H01J9/025 ,  H01J3/021

Abstract: A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes steps of sequentially forming a cathode layer, a first insulating layer, and a gate layer on a substrate, forming a protection layer on the gate electrode layer, etching portions of the protection layer and gate electrode to form a plurality of first opening holes where portions of the first insulating layer being exposed through the first opening holes, forming a second insulating layer on the protection layer and on the first opening holes, forming a focus electrode layer on the second insulating layer, forming a photoresist layer on the focus electrode layer, etching a portion of the photoresist layer and a portion of the focus electrode layer to form a second opening hole where a portion of the second insulating layer being exposed through the second opening hole, and forming emitter holes exposing a portion of the cathode layer by etching the exposed surface of the second insulating layer to a bottom surface of the first insulating layer. After removing the photoresist layer electron emission emitters are formed on the cathode layer.

Abstract translation: 提供了一种制造场致发射器件（FED）的方法，其减少了光掩模图案化工艺的数量并提高了FED的制造成品率。 该方法包括以下步骤：在衬底上依次形成阴极层，第一绝缘层和栅极层，在栅电极层上形成保护层，蚀刻保护层和栅电极的部分，以形成多个第一开口 第一绝缘层的部分通过第一开孔露出的孔，在保护层和第一开孔上形成第二绝缘层，在第二绝缘层上形成聚焦电极层，在焦点上形成光致抗蚀剂层 蚀刻光致抗蚀剂层的一部分和聚焦电极层的一部分以形成第二开孔，其中第二绝缘层的一部分通过第二开孔暴露，并且形成暴露阴极的一部分的发射极 通过将第二绝缘层的暴露表面蚀刻到第一绝缘层的底表面。 在除去光致抗蚀剂层之后，在阴极层上形成电子发射发射体。

公开(公告)号：US20090072705A1

公开(公告)日：2009-03-19

申请号：US12155722

申请日：2008-06-09

Applicant: Hyun-Ki Park ,  Hee-Sung Moon ,  Yoon-Jin Kim ,  Jae-Myung Kim ,  Kyu-Nam Joo ,  So-Ra Lee

Inventor： Hyun-Ki Park ,  Hee-Sung Moon ,  Yoon-Jin Kim ,  Jae-Myung Kim ,  Kyu-Nam Joo ,  So-Ra Lee

IPC: H01J1/62 ,  H01J1/88 ,  H01J9/14

CPC classification number: H01J3/021 ,  H01J1/304 ,  H01J1/316 ,  H01J9/025 ,  H01J63/02 ,  H01J63/06

Abstract: An electron emission device includes a base substrate, at least one isolation layer on the base substrate, the isolation layer having a first lateral side and a second lateral side opposite the first lateral side, first and second electrodes on the base substrate along the first and second lateral sides of the isolation layer, respectively, a first electron emission layer between the first electrode and the first lateral side of the isolation layer, and a second electron emission layer between the second electrode and the second lateral side of the isolation layer.

Abstract translation: 电子发射装置包括基底基底，基底基底上的至少一个隔离层，隔离层具有第一横向侧和与第一横向侧相对的第二横向侧，第一和第二电极沿着第一和第二基底 隔离层的第二横向侧分别在隔离层的第一电极和第一侧面之间的第一电子发射层和隔离层的第二电极和第二侧面之间的第二电子发射层。

公开(公告)号：US07492089B2

公开(公告)日：2009-02-17

申请号：US11493510

申请日：2006-07-27

Applicant: Young-Suk Cho ,  Jae-Woo Bae ,  Dong-Hyun Kang ,  Ui-Song Do ,  Kyu-Nam Joo

Inventor： Young-Suk Cho ,  Jae-Woo Bae ,  Dong-Hyun Kang ,  Ui-Song Do ,  Kyu-Nam Joo

IPC: H01J1/62

CPC classification number: H01J3/021 ,  G09G3/22 ,  H01J1/304 ,  H01J63/02 ,  H01J2203/0236

Abstract: An electron emission type backlight unit which may include a front substrate and a rear substrate, a gate electrode, an insulating unit disposed on the gate electrode, a cathode disposed on the insulating unit that intersects the gate electrode, a first opening formed in the cathode to expose the gate electrode, a second opening formed in the insulating unit to expose the gate electrode, in which the second opening connects to the first opening, an electron emitting unit disposed on the cathode that exposes the gate electrode, in which the electron emitting unit is formed to trace along a boundary of the cathode that defines the first opening, an auxiliary gate electrode disposed on the gate electrode, in which the auxiliary gate electrode passes through the first opening and the second opening; and an anode and a light emitting unit.

Abstract translation: 一种电子发射型背光单元，其可以包括前基板和后基板，栅电极，设置在栅电极上的绝缘单元，设置在与栅电极相交的绝缘单元上的阴极，形成在阴极中的第一开口 露出栅电极，形成在绝缘单元中的第二开口以暴露第二开口连接到第一开口的栅电极，设置在暴露栅电极的阴极上的电子发射单元，其中电子发射 单元形成为沿着限定第一开口的阴极的边界，辅助栅极设置在栅电极上，辅助栅极通过第一开口和第二开口; 以及阳极和发光单元。

公开(公告)号：US07477011B2

公开(公告)日：2009-01-13

申请号：US11286384

申请日：2005-11-25

Applicant: Sang-Ho Jeon ,  Byong-Gon Lee ,  Sang-Hyuck Ahn ,  Su-Bong Hong

Inventor： Sang-Ho Jeon ,  Byong-Gon Lee ,  Sang-Hyuck Ahn ,  Su-Bong Hong

IPC: H01J1/02 ,  H01J63/04

CPC classification number: H01J3/021 ,  H01J1/30 ,  H01J1/304 ,  H01J1/88 ,  H01J29/481 ,  H01J29/862

Abstract: In an electron emission device, the surface roughness of a substrate with driving electrodes and an insulating layer is optimized. The electron emission device includes first and second substrates facing each other with a predetermined distance therebetween. An electron emission unit is formed on a surface of the first substrate facing the second substrate, and includes electron emission regions, a plurality of driving electrodes, and an insulating layer for insulating the driving electrodes from each other. A light emission unit is formed on a surface of the second substrate facing the first substrate, and includes phosphor layers and an anode electrode. The first substrate satisfies the following condition: 0.5 nm≦Ra≦1.8 nm, where Ra indicates the average roughness of the surface of the first substrate facing the second substrate.

Abstract translation: 在电子发射器件中，优化了具有驱动电极和绝缘层的衬底的表面粗糙度。 电子发射装置包括彼此面对彼此以预定距离的第一和第二基板。 电子发射单元形成在面向第二衬底的第一衬底的表面上，并且包括电子发射区域，多个驱动电极和用于使驱动电极彼此绝缘的绝缘层。 在与第一基板相对的第二基板的表面上形成发光单元，并且包括荧光体层和阳极电极。 第一衬底满足以下条件：0.5nm <= Ra <= 1.8nm，其中Ra表示面向第二衬底的第一衬底的表面的平均粗糙度。

公开(公告)号：US07462981B2

公开(公告)日：2008-12-09

申请号：US11138239

申请日：2005-05-26

Applicant: Seong-Yeon Hwang

Inventor： Seong-Yeon Hwang

IPC: H01J1/02 ,  H01J9/00

CPC classification number: H01J29/481 ,  H01J1/30 ,  H01J3/021 ,  H01J31/127

Abstract: An electron emission device with conductive layers for preventing accumulation of static charges on an insulating layer of the device is shown that does not require an independent driving circuit. The device includes cathode electrodes formed on a substrate and separated from gate electrodes by an insulating layer formed over the cathode electrodes, all inside a partial vacuum chamber. Crossings of cathode and gate electrodes form the display areas while in the non-display areas of the insulating layer, that are susceptible to accumulation of electrostatic charge, conductive layers are formed parallel to the cathode or gate electrodes, for the most part separated from these electrodes by the insulating layer. Outside the device chamber, the conductive layers are electrically coupled to their corresponding electrodes. Conductive layers thus formed and coupled discharge accumulated static charge over the insulating layers inside the device to the outside circuit.

Abstract translation: 示出了具有导电层的电子发射装置，用于防止装置的绝缘层上的静电积累，这不需要独立的驱动电路。 该器件包括形成在衬底上的阴极，并且通过在阴极上形成的绝缘层与栅电极分离，全部位于部分真空室内。 阴极和栅电极的交叉形成显示区域，而在绝缘层的非显示区域中易于积聚静电电荷，导电层平行于阴极或栅极电极形成，大部分与这些区域分离。 电极由绝缘层。 在器件室外部，导电层电耦合到其相应的电极。 如此形成并连接的导电层将装置内的绝缘层上的静电电荷放电到外部电路。

公开(公告)号：US20080129178A1

公开(公告)日：2008-06-05

申请号：US11971452

申请日：2008-01-09

Applicant: Heather Diane Hudspeth ,  Ji Ung Lee ,  Reed Roeder Corderman ,  Anping Zhang ,  Renee Bushey Rohling ,  Lauraine Denault ,  Joleyn Eileen Balch

Inventor： Heather Diane Hudspeth ,  Ji Ung Lee ,  Reed Roeder Corderman ,  Anping Zhang ,  Renee Bushey Rohling ,  Lauraine Denault ,  Joleyn Eileen Balch

IPC: H01J1/02

CPC classification number: H01J1/304 ,  H01J3/021 ,  H01J9/025

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract translation: 本发明涉及门控纳米棒场发射器件，其中这种器件具有相对较小的发射极尖对栅极距离，从而提供相对高的发射极尖端密度和低导通电压。 这种方法采用传统的器件处理技术（光刻，蚀刻等）与纳米棒的电化学沉积的组合。 这些方法相对简单，成本效益高，效率高; 并且它们提供适用于X射线成像应用，照明应用，平板场发射显示（FED）应用等的场致发射器件。

公开(公告)号：US07318996B2

公开(公告)日：2008-01-15

申请号：US10913331

申请日：2004-08-09

Applicant: Yasuyuki Watanabe ,  Kazuya Ishiwata ,  Yoshimi Uda ,  Shinsaku Kubo

Inventor： Yasuyuki Watanabe ,  Kazuya Ishiwata ,  Yoshimi Uda ,  Shinsaku Kubo

IPC: G03F7/20

CPC classification number: H01J9/027 ,  G03F7/0035 ,  G03F7/0047 ,  G03F7/203 ,  H01J1/88 ,  H01J3/021 ,  H01J29/02 ,  H01J29/028 ,  H01J31/127 ,  H01J2201/3165 ,  H05K1/0306 ,  H05K3/0023

Abstract: A method for forming patterned insulating elements on a substrate includes a plurality of exposure steps of exposing a photosensitive paste provided on the substrate through at least one mask having a predetermined pattern; a developing step of developing the exposed photosensitive paste to form a precursor pattern; and a firing step of firing the precursor pattern to form the patterned insulating elements. This method is applied to a method for forming an electron source and a method for forming an image display device including the electron source.