Microelectronic device with mixed dielectric
    114.
    发明申请
    Microelectronic device with mixed dielectric 有权
    具有混合电介质的微电子器件

    公开(公告)号:US20070169959A1

    公开(公告)日:2007-07-26

    申请号:US11338402

    申请日:2006-01-24

    Abstract: A microelectronic device and method of making the microelectronic device is provided. A dielectric substrate having first and second surfaces is provided. A first component, located in the dielectric substrate between the first and second surfaces of the dielectric substrate is formed. The first component includes a first interface and a second interface. A second component located in the dielectric substrate and spaced relative to the first component is formed, and a first low permittivity material is formed having a predetermined thickness and a first and second surface, the first surface of the low permittivity material is adjacent to or in contact with a first portion of the first interface of the first component. The first low permittivity material substantially reduces capacitive parasitics of the first component, resulting in a substantially higher characteristic impedance of the first component during operation of the microelectronic device.

    Abstract translation: 提供微电子器件和制造微电子器件的方法。 提供具有第一和第二表面的电介质基片。 形成位于电介质基板之间的电介质基板的第一和第二表面之间的第一部件。 第一组件包括第一接口和第二接口。 形成位于电介质基板中并相对于第一部件间隔开的第二部件,并且形成具有预定厚度的第一低介电常数材料和第一和第二表面,低介电常数材料的第一表面邻近或位于 与第一部件的第一界面的第一部分接触。 第一低介电常数材料显着地减小了第一部件的电容寄生效应,导致在微电子器件工作期间第一部件的特征阻抗基本上更高。

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