Abstract:
Copolymers of diglycidyl ether terminated polysiloxane compounds and non-aromatic polyamines are used in the preparation of dielectric materials for electroless metal plating. The copolymers may be used in the manufacture of printed circuit boards such as in cleaning and conditioning through-holes prior to electroless metallization.
Abstract:
Embodiments of substrates, semiconductor devices and methods are shown that include elongated structures to improve conduction. Elongated structures and methods are also shown that provide electromagnetic isolation to reduce noise in adjacent components.
Abstract:
A multilayer wiring plate includes a coaxial wire includes a signal line, an insulation coating and an outer peripheral conductor. An insulating layer is arranged on an inner or outer layer side. A metal film circuit is arranged by the intermediary of the insulating layer, and the metal film circuit and the outer peripheral conductor and signal line of the coaxial wire are connected. A signal line connection part that connects the signal line to the metal film circuit includes a penetration hole A that passes through the insulating layer and the outer peripheral conductor; the coaxial wire from which the outer peripheral conductor is removed inside the penetration hole A; a hole filling resin filled inside the penetration hole A; a penetration hole B that passes through the hole filling resin and the signal line; and a plated layer arranged on an inner wall of the penetration hole B.
Abstract:
In some embodiments, a carrier substrate for an integrated circuit may include a core, a first plurality of openings, and a first insulating material. The core may include a first surface and a second surface substantially opposing the first surface. The first plurality of openings may extend from the first surface to the second surface of the core. In some embodiments, the first insulating material may be applied to a surface of the first plurality of openings. In some embodiments, the first plurality of openings may include a first conductor extending through each of the first plurality of openings from the first surface to the second surface. In some embodiments, at least a first subset of the first plurality of openings may include a first charge and at least a second subset of the first plurality of openings may include a second charge. The first charge and the second charge may be different.
Abstract:
In a manufacturing method of a semiconductor device incorporating a semiconductor element in a multilayered wiring structure including a plurality of wiring layers and insulating layers, a semiconductor element is mounted on a silicon support body whose thickness is reduced to a desired thickness and which are equipped with a plurality of through-vias running through in the thickness direction; an insulating layer is formed to embed the semiconductor element; then, a plurality of wiring layers is formed on the opposite surfaces of the silicon support body in connection with the semiconductor element. Thus, it is possible to reduce warping which occurs in proximity to the semiconductor element in manufacturing, thus improving a warping profile in the entirety of a semiconductor device. Additionally, it is possible to prevent semiconductor elements from becoming useless, improve a yield rate, and produce a thin-type semiconductor device with high-density packaging property.
Abstract:
In a manufacturing method of a package carrier, a substrate having an upper surface, a lower surface, and an opening communicating the two surfaces is provided. An electronic device is disposed inside the opening. A first insulation layer and a superimposed first metal layer are laminated on the upper surface; a second insulation layer and a superimposed second metal layer are laminated on the lower surface. The opening is filled with the first and second insulation layers. First blind holes, second blind holes, and a heat-dissipation channel are formed. A third metal layer is formed on the first and second blind holes and an inner wall of the heat-dissipation channel. A heat-conducting device is disposed inside the heat-dissipation channel and fixed into the heat-dissipation channel via an insulation material. The first and second metal layers are patterned to form a first patterned metal layer and a second patterned metal layer.
Abstract:
Embodiments of substrates, semiconductor devices and methods are shown that include elongated structures to improve conduction. Elongated structures and methods are also shown that provide electromagnetic isolation to reduce noise in adjacent components.
Abstract:
A method of manufacturing a through-hole electrode substrate includes forming a plurality of through-holes in a substrate, forming a plurality of through-hole electrodes by filling a conductive material into the plurality of through-holes, forming a first insulation layer on one surface of the substrate, forming a plurality of first openings which expose the plurality of through-hole electrodes corresponding to each of the plurality of through-hole electrodes, on the first insulation layer and correcting a position of the plurality of first openings using the relationship between a misalignment amount of a measured distance value of an open position of a leaning through-hole among the plurality of through-holes and of a design distance value of the open position of the leaning through-hole among the plurality of through-holes with respect to a center position of the substrate.
Abstract:
The circuit board is capable of tightly bonding a cable layer on a base member even if thermal expansion coefficients of the base member and the cable layer are significantly different. The circuit board comprises: the base member; and the cable layer being laminated on the base member with anchor patterns, which are electrically conductive layers formed on a surface of the base member.
Abstract:
According to one embodiment of the invention, a circuit board comprises an insulating layer including a resin material, a plurality of inorganic insulating particles, and a penetrating hole. The circuit board further comprises a penetrating conductor disposed in the penetrating hole. The insulating layer includes a resin insulating portion having the plurality of inorganic insulating particles dispersed in the resin material. The insulating layer further includes an inorganic insulating portion interposed between the resin insulating portion and the penetrating conductor and made of the same material as the plurality of inorganic insulating particles.