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    MEMORY CIRCUIT PROVIDED WITH BISTABLE CIRCUIT AND NON-VOLATILE ELEMENT
    121.
    发明申请
    MEMORY CIRCUIT PROVIDED WITH BISTABLE CIRCUIT AND NON-VOLATILE ELEMENT 有权
    具有双向电路和非易失性元件的存储器电路

    公开(公告)号：US20150070974A1

    公开(公告)日：2015-03-12

    申请号：US14543487

    申请日：2014-11-17

    Applicant: Japan Science and Technology Agency

    Inventor： Yusuke Shuto ,  Shuichiro Yamamoto ,  Satoshi Sugahara

    IPC: G11C14/00

    CPC classification number: G11C14/0081 ,  G11C11/1675 ,  G11C11/1693

    Abstract: A memory circuit includes: a bistable circuit (30) that stores data; nonvolatile elements (MTJ1, MTJ2) that store data written in the bistable circuit in a nonvolatile manner, and restore data stored in a nonvolatile manner into the bistable circuit; and a control unit that stores data written in the bistable circuit in a nonvolatile manner and cuts off a power supply to the bistable circuit when the period not to read data from or write data into the bistable circuit is longer than a predetermined time period, and does not store data written in the bistable circuit in a nonvolatile manner and makes the supply voltage for the bistable circuit lower than a voltage during the period to read data from or write data into the bistable circuit when the period not to read or write data is shorter than the predetermined time period.

    Abstract translation: 存储电路包括：存储数据的双稳态电路（30）; 以非挥发性方式存储写在双稳态电路中的数据的非易失性元件（MTJ1，MTJ2），将以非易失性方式存储的数据恢复到双稳态电路中; 以及控制单元，其以非易失性方式存储写入双稳态电路中的数据，并且当不从双稳态电路读取数据或将数据写入双稳态电路的时间长于预定时间段时，切断对双稳态电路的电源，并且 不以非易失性方式存储写入双稳态电路中的数据，并且当不读或写数据的周期是双稳态电路的电源电压低于该周期期间的电压以从数据读取数据或将数据写入双稳态电路 比预定时间段短。

    DEVICE FOR ESTIMATING PLACEMENT OF PHYSICAL OBJECTS
    123.
    发明申请
    DEVICE FOR ESTIMATING PLACEMENT OF PHYSICAL OBJECTS 有权
    用于估计物理对象放置的装置

    公开(公告)号：US20150003631A1

    公开(公告)日：2015-01-01

    申请号：US14370859

    申请日：2013-01-30

    Applicant: Japan Science and Technology Agency

    Inventor： Shiro Ise ,  Kayo Matsuoka

    IPC: H04R29/00

    CPC classification number: H04R29/00 ,  G01S5/18 ,  G01S5/30 ,  H04R1/403 ,  H04R1/406 ,  H04R3/12 ,  H04R2201/40 ,  H04S7/301 ,  H04S2400/11

    Abstract: An object position estimating apparatus which estimates positions of M objects in real space (M being an integer not less than 2), including: a characteristic vector generating unit operable to generate, for each of M objects, a characteristic vector, the characteristic vector including as its components measurements of the object measured on N scales (N being an integer not less than 3), each of N scales measuring closeness to each of N reference points in the real space; a dissimilarity matrix deriving unit operable to calculate a norm between the characteristic vectors of two objects for every pair from among M objects and to derive a dissimilarity matrix with M rows and M columns, the dissimilarity matrix including as its elements the calculated norms; and an estimation unit operable to estimate positions of M objects in the real space based on the dissimilarity matrix and to output an estimation result.

    Abstract translation: 一种物体位置估计装置，其估计实际空间中的M个物体的位置（M是不小于2的整数），包括：特征矢量生成单元，用于为M个物体中的每一个生成特征矢量，所述特征矢量包括 作为在N个尺度（N是不小于3的整数）上测量的对象的组件测量，N个尺度中的每一个测量与实际空间中的每个N个参考点的接近度; 一个不相似矩阵导出单元，用于计算M个对象中每对的两个对象的特征向量之间的范数，并导出具有M行和M列的不相似矩阵，该不相似矩阵包括作为其计算出的范数的元素; 以及估计单元，其可操作以基于所述不相似矩阵来估计所述实际空间中的M个对象的位置并输出估计结果。

    PROGRAM ANALYSIS/VERIFICATION SERVICE PROVISION SYSTEM, CONTROL METHOD FOR SAME, CONTROL PROGRAM, CONTROL PROGRAM FOR DIRECTING COMPUTER TO FUNCTION, PROGRAM ANALYSIS/VERIFICATION DEVICE, PROGRAM ANALYSIS/VERIFICATION TOOL MANAGEMENT DEVICE
    126.
    发明申请
    PROGRAM ANALYSIS/VERIFICATION SERVICE PROVISION SYSTEM, CONTROL METHOD FOR SAME, CONTROL PROGRAM, CONTROL PROGRAM FOR DIRECTING COMPUTER TO FUNCTION, PROGRAM ANALYSIS/VERIFICATION DEVICE, PROGRAM ANALYSIS/VERIFICATION TOOL MANAGEMENT DEVICE 有权
    程序分析/验证服务提供系统，其控制方法，控制程序，用于指导计算机到功能的控制程序，程序分析/验证设备，程序分析/验证工具管理设备

    公开(公告)号：US20140304815A1

    公开(公告)日：2014-10-09

    申请号：US14357956

    申请日：2012-11-12

    Applicant: Japan Science and Technology Agency

    Inventor： Toshiyuki Maeda

    IPC: G06F21/57

    CPC classification number: G06F21/57 ,  G06F11/3604 ,  G06F21/566

    Abstract: A program analysis/verification service provision system (1) includes: a tool registration/search section (313) for extracting, from a plurality of program analysis/verification tools (virtual machines) stored in a tool storage section (320), a virtual machine (T) in which a program analysis/verification tool for use in analysis/verification of a target program (P) has been installed and set; and a virtual machine execution environment section (120) for analyzing/verifying the target program (P) with use of the virtual machine (T) thus extracted.

    Abstract translation: 程序分析/验证服务提供系统（1）包括：工具登记/搜索部分（313），用于从存储在工具存储部分（320）中的多个程序分析/验证工具（虚拟机）中提取虚拟 机器（T），其中已经安装和设置用于目标程序（P）的分析/验证的程序分析/验证工具; 以及用于使用由此提取的虚拟机（T）分析/验证目标程序（P）的虚拟机执行环境部分（120）。

    Thermoelectric Material, Method for Producing the Same, and Thermoelectric Conversion Module Using the Same
    127.
    发明申请
    Thermoelectric Material, Method for Producing the Same, and Thermoelectric Conversion Module Using the Same 有权
    热电材料，其制造方法和使用该热电材料的热电转换模块

    公开(公告)号：US20140299172A1

    公开(公告)日：2014-10-09

    申请号：US14355598

    申请日：2013-05-15

    Applicant: Japan Science and Technology Agency

    Inventor： Yoshiaki Nakamura ,  Masayuki Isogawa ,  Tomohiro Ueda ,  Jun Kikkawa ,  Akira Sakai ,  Hideo Hosono

    IPC: H01L35/22 ,  H01L35/34

    CPC classification number: H01L35/22 ,  H01L35/00 ,  H01L35/12 ,  H01L35/14 ,  H01L35/26 ,  H01L35/32 ,  H01L35/34

    Abstract: A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening.As a result, it is possible to provide the thermoelectric material superior in thermoelectric conversion performance.

    Abstract translation: 热电材料包括半导体衬底，形成在衬底上的半导体氧化膜和设置在氧化物膜上的热电层。 半导体氧化膜具有形成在其中的第一纳米开口。 热电层具有将半导体纳米点堆积在第一纳米开口上或上方的构造，以形成粒子堆积结构。 至少一些纳米点各自具有在其表面中形成的第二纳米开口，并且通过其晶体取向对准通过第二纳米开口彼此连接。 通过氧化衬底以在其上形成半导体氧化膜的步骤，在氧化膜中形成第一纳米开口并外延生长以在第一纳米开口上堆叠多个纳米点来制造热电材料。 结果，可以提供热电转换性能优异的热电材料。

    METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA USING AN AUTOCLAVE
    128.
    发明申请
    METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA USING AN AUTOCLAVE 审中-公开
    使用自动化在超临界氨基酸中生长III族氮化物晶体的方法

    公开(公告)号：US20140190403A1

    公开(公告)日：2014-07-10

    申请号：US14206558

    申请日：2014-03-12

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

    Inventor： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

    IPC: C30B7/10

    CPC classification number: C30B7/105 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1096

    Abstract: A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

    Abstract translation: 生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更小的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种， 是III族氮化物单晶。 III族氮化物多晶体可以在600℃以上的还原气体中退火之后从先前的氨热处理中回收。高压釜可以包括填充有氨的内部室，其中氨从内部室释放到高压釜 当氨在高压釜加热后达到超临界状态时，超临界氨的对流转移源材料并将转移的原材料沉积到晶种上，而防止源材料的未溶解颗粒被转移并沉积在 晶种。

    PHOTORESPONSIVE NUCLEIC ACID MANUFACTURING METHOD
    129.
    发明申请
    PHOTORESPONSIVE NUCLEIC ACID MANUFACTURING METHOD 有权
    光电子核酸制造方法

    公开(公告)号：US20140107331A1

    公开(公告)日：2014-04-17

    申请号：US14141052

    申请日：2013-12-26

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Kenzo Fujimoto ,  Masayuki Ogino ,  Yoshinaga Yoshimura

    IPC: C07H21/04 ,  C07H19/073

    CPC classification number: C07H21/00 ,  C07H19/073 ,  C07H21/02 ,  C07H21/04

    Abstract: The present invention provides a manufacturing method that can easily manufacture a compound known as photoresponsive (photocoupling) nucleic acids at high yield in a shorter period of time than that of the conventional technology. The present invention relates to a method of manufacturing a photoresponsive nucleic acid which includes a step of reacting a nucleic acid having groups represented by the Formula I, the Formula III, the Formula IV, or the Formula V and a compound represented by the Formula II, or reacting a nucleic acid having groups represented by the Formula VI, the Formula VIII, the Formula IX, or the Formula X and a compound represented by the Formula VII by heating them by microwaves in the presence of a metal catalyst, a basic substance, and a solvent.

    Abstract translation: 本发明提供了一种制造方法，其可以在比常规技术更短的时间内以高产率容易地制造称为光响应（光耦合）核酸的化合物。 本发明涉及一种制备光响应核酸的方法，其包括使具有由式I，式III，式IV或式V表示的基团的核酸与式II表示的化合物反应的步骤 或通过在金属催化剂，碱性物质的存在下通过微波加热而使具有由式VI，式VIII，式IX或式X表示的基团的核酸和式VII表示的化合物反应 ，和溶剂。

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