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    MEMS DEVICE, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS
    132.
    发明申请
    MEMS DEVICE, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS 有权

    公开(公告)号：US20170144442A1

    公开(公告)日：2017-05-25

    申请号：US15354851

    申请日：2016-11-17

    Applicant: SEIKO EPSON CORPORATION

    Inventor： Katsutomo TSUKAHARA ,  Motoki TAKABE ,  Eiju HIRAI ,  Masao NAKAYAMA ,  Munehide SAIMEN

    IPC: B41J2/14 ,  B81B7/00

    CPC classification number: B41J2/14201 ,  B41J2/14233 ,  B41J2002/14241 ,  B41J2002/14266 ,  B41J2002/14491 ,  B41J2202/11 ,  B41J2202/18 ,  B81B7/0061 ,  B81B2201/052

    Abstract: A MEMS device includes a drive region having a stacked structural body in which a first electrode layer, a first dielectric layer, and a second electrode layer are stacked in that order. The stacked structural body extends from the drive region to a non-drive region that is outer than the drive region and, in an extending direction of the stacked structural body, the first electrode layer and the first dielectric layer extend farther outward than the second electrode layer. A second dielectric layer covering an end of the second electrode layer in the extending direction is stacked on the second electrode layer in the non-drive region and the first dielectric layer that is formed outer in the extending direction than the second electrode layer. A third electrode layer electrically connected to the second electrode layer is stacked on the second dielectric layer and on the second electrode layer in a region outside the second dielectric layer. In the extending direction, the end of the second electrode layer is formed more to a drive region side than a second dielectric layer-side end of the third electrode layer.

    SUBSTRATE PROCESSING METHOD
    136.
    发明申请
    SUBSTRATE PROCESSING METHOD 有权
    基板处理方法

    公开(公告)号：US20150024605A1

    公开(公告)日：2015-01-22

    申请号：US14330662

    申请日：2014-07-14

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Seiko Minami ,  Toshiyasu Sakai

    IPC: H01L21/3065

    CPC classification number: B81C1/00587 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2002/14467 ,  B81B2201/052 ,  B81C1/00087 ,  B81C2201/0132 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116

    Abstract: A substrate processing method for forming a through-hole in a substrate by reactive ion etching includes preparing a substrate that has a first surface and a second surface and on the first surface side of which a first layer and a second layer are disposed, the second surface being on the opposite side to the first surface, the second layer covering the first layer; and performing reactive ion etching on the substrate from the second surface to form a through-hole extending through the substrate from the first surface to the second surface, the reactive ion etching being performed to reach the first layer. The etching rate of the second layer for the reactive ion etching is lower than that of the first layer.

    Abstract translation: 用于通过反应离子蚀刻在衬底中形成通孔的衬底处理方法包括制备具有第一表面和第二表面的衬底，其第一表面侧上设置有第一层和第二层，第二层 表面位于与第一表面相反的一侧，第二层覆盖第一层; 以及从所述第二表面在所述衬底上进行反应离子蚀刻，以形成从所述第一表面延伸穿过所述衬底到所述第二表面的通孔，进行所述反应离子蚀刻以到达所述第一层。 用于反应离子蚀刻的第二层的蚀刻速率低于第一层的蚀刻速率。

    Heating system and method for microfluidic and micromechanical applications
    137.
    发明授权
    Heating system and method for microfluidic and micromechanical applications 有权
    微流控和微机械应用的加热系统和方法

    公开(公告)号：US08798448B2

    公开(公告)日：2014-08-05

    申请号：US12968150

    申请日：2010-12-14

    Applicant: Ming Fang ,  Fuchao Wang

    Inventor： Ming Fang ,  Fuchao Wang

    IPC: F24H1/20

    CPC classification number: B81C1/00119 ,  B41J2/14056 ,  B41J2/14072 ,  B41J2/14137 ,  B41J2/16 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1639 ,  B81B1/006 ,  B81B2201/052 ,  B81B2201/058 ,  B81C2201/013 ,  B81C2203/075 ,  H01L28/20 ,  Y10T29/41 ,  Y10T29/49401 ,  Y10T29/49826

    Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

    Abstract translation: 集成半导体加热组件包括半导体衬底，形成在其中的腔室以及与腔室流体连通的出口，允许流体响应于加热室而离开腔室。 集成加热组件包括邻近腔室的第一加热元件，该第一加热元件可以产生高于选定阈值的热量，并将腔室中的流体朝向出口偏压。 第二加热元件邻近出口定位以产生高于所选阈值的热量，便于流体通过出口远离腔室的运动。 添加第二加热元件减少了每个加热元件发出的热量，并使吸热材料的厚度最小化到出口的开口端。 由于这样的材料是昂贵的，所以这降低了组件的制造成本和零售价格，同时提高了其效率和使用寿命。

    Forming nozzles
    138.
    发明授权
    Forming nozzles 有权
    成型喷嘴

    公开(公告)号：US08641171B2

    公开(公告)日：2014-02-04

    申请号：US13484117

    申请日：2012-05-30

    Applicant: Gregory DeBrabander ,  Mark Nepomnishy

    Inventor： Gregory DeBrabander ,  Mark Nepomnishy

    IPC: B41J2/135

    CPC classification number: B41J2/161 ,  B41J2/162 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B81B2201/052 ,  B81C1/00087

    Abstract: Fluid ejection nozzles having a tapered section leading to a straight walled bore are described. Both the tapered section of the nozzle and the straight walled bore are formed from a single side of semiconductor layer so that the tapered section and the bore are aligned with one another, even when an array of nozzles are formed across a die and multiple dies are formed on a semiconductor substrate.

    Abstract translation: 描述了具有导向直壁的锥形部分的流体喷射嘴。 喷嘴的锥形部分和直壁孔均由半导体层的单侧形成，使得锥形部分和孔彼此对准，即使在模具之间形成喷嘴阵列并且多个模具是 形成在半导体衬底上。

    METHOD OF MANUFACTURING NOZZLE PLATE
    139.
    发明申请
    METHOD OF MANUFACTURING NOZZLE PLATE 有权
    制造喷嘴板的方法

    公开(公告)号：US20130244352A1

    公开(公告)日：2013-09-19

    申请号：US13802603

    申请日：2013-03-13

    Applicant: FUJIFILM CORPORATION

    Inventor： Shuji Takahashi

    IPC: H01L21/306

    CPC classification number: H01L21/30604 ,  B41J2/14233 ,  B41J2/1433 ,  B41J2/162 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B81B2201/052 ,  B81C1/00626 ,  H01L21/30608

    Abstract: A method of manufacturing a nozzle plate includes: a mask pattern layer forming step of, with respect to a laminated substrate constituted of a first silicon substrate having a (111) surface orientation and a second silicon substrate having a (100) surface orientation, forming a frame-shaped mask pattern layer on the second silicon substrate; a non-through hole forming step of forming a straight section of the nozzle in the first silicon substrate; a protective film forming step of forming a protective film over a first portion on the second silicon substrate that is not covered with the mask pattern layer, and over inner surfaces of the first and second silicon substrates defining the non-through hole; and an anisotropic etching step of anisotropically etching the second silicon substrate so as to form a tapered section of the nozzle defined with {111} surfaces exposed in the second silicon substrate by the anisotropic etching.

    Abstract translation: 制造喷嘴板的方法包括：掩模图案层形成步骤，相对于由具有（111）表面取向的第一硅衬底和具有（100）表面取向的第二硅衬底构成的层叠衬底，形成 第二硅衬底上的框状掩模图案层; 非通孔形成步骤，在所述第一硅衬底中形成所述喷嘴的直线部分; 保护膜形成步骤，在未被掩模图案层覆盖的第二硅基板上的第一部分上形成保护膜，以及在限定非通孔的第一和第二硅基板的内表面上; 以及各向异性蚀刻步骤，各向异性蚀刻第二硅衬底，以便通过各向异性蚀刻形成在第二硅衬底中露出的{111}表面限定的喷嘴的锥形部分。

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