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    Photolithography methods and systems
    133.
    发明授权
    Photolithography methods and systems 失效
    光刻方法和系统

    公开(公告)号：US06754002B2

    公开(公告)日：2004-06-22

    申请号：US09967841

    申请日：2001-09-27

    Applicant: Nicholas F. Borrelli ,  Charlene M. Smith ,  Johannes Moll

    Inventor： Nicholas F. Borrelli ,  Charlene M. Smith ,  Johannes Moll

    IPC: G02B1314

    CPC classification number: G03F7/70041 ,  C03B19/1423 ,  C03B19/1453 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/21 ,  C03B2201/23 ,  C03B2207/36 ,  C03C3/06 ,  C03C4/0085 ,  C03C23/002 ,  C03C2201/21 ,  C03C2201/23 ,  G03F7/70058 ,  G03F7/70941 ,  G03F7/70958 ,  G03F7/70966

    Abstract: Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm2/pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02×1018 molecules/cm3 and about 0.18×1018 molecules/cm3 are provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.

    Abstract translation: 公开了平版印刷方法。 在一种这样的方法中，用于产生波长短于约300nm的波长小于10mJ / cm 2 /脉冲的紫外光刻辐射的脉冲紫外辐射源和具有浓度为 提供约0.02×10 18分子/ cm 3和约0.18×10 18分子/ cm 3之间的分子氢。 用紫外光刻法形成光刻图案; 光刻图案被减少以产生减小的光刻图案; 并且将还原的光刻图案投影到紫外线照射敏感光刻介质上以形成印刷光刻图案。 形成，还原和突出步骤中的至少一个步骤包括通过高纯度熔融石英光刻玻璃传输紫外光刻辐射。 还描述了平版印刷系统和高纯度熔融石英光刻玻璃。

    Quartz glass member and projection aligner
    134.
    发明申请
    Quartz glass member and projection aligner 有权
    石英玻璃构件和投影对准器

    公开(公告)号：US20030171203A1

    公开(公告)日：2003-09-11

    申请号：US10311233

    申请日：2002-12-17

    Inventor： Norio Komine ,  Akiko Yoshida ,  Hiroki Jinbo ,  Seishi Fujiwara

    IPC: C03C003/06

    CPC classification number: C03C4/0071 ,  C03B19/1423 ,  C03B19/1453 ,  C03B19/1492 ,  C03B2201/07 ,  C03B2201/21 ,  C03B2201/23 ,  C03B2207/00 ,  C03C3/06 ,  C03C2201/11 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2203/40 ,  C03C2203/44 ,  C03C2203/46 ,  C03C2203/52 ,  C03C2203/54 ,  G02B1/02 ,  G02B13/143 ,  G03F7/70241 ,  G03F7/70958

    Abstract: A silica glass member of the present invention is one wherein when a composition thereof is expressed by SiOx, x is not less than 1.85 nor more than 1.95, wherein a concentration of hydrogen molecules included therein is not less than 1null1016 molecules/cm3 nor more than 5null1018 molecules/cm3, and wherein a difference AnullB between an absorption coefficient A immediately before an end of irradiation with 1null104 pulses of ArF excimer laser light in an average one-pulse energy density of 2 mJ/cm2 and a second absorption coefficient B at 600 seconds after a stop of the irradiation with the ArF excimer laser light is not more than 0.002 cmnull1. When this silica glass member is applied to an illumination optical system and/or a projection optical system in projection exposure apparatus, it becomes feasible to implement uniform exposure while reducing variation in illuminance on a reticle surface and in an exposure area on a wafer.

    Abstract translation: 本发明的石英玻璃构件是当其组成由SiO x表示时，x不小于1.85或不大于1.95，其中包含的氢分子的浓度不小于1×10 16分子/ cm <3>不超过5×10 18分子/ cm 3，并且其中在照射结束之前的吸收系数A与平均单脉冲中的1×10 4个ArF准分子激光脉冲之间的差AB 用ArF准分子激光照射停止600秒后的能量密度为2mJ / cm 2，第二吸收系数B为0.002cm -1以下。 当将该石英玻璃构件应用于投影曝光装置中的照明光学系统和/或投影光学系统时，可以实现均匀曝光，同时减小掩模版面和晶片上的曝光区域中的照度变化。

    Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
    136.
    发明授权
    Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass 失效
    真空紫外透射硅氧氟硅光刻玻璃

    公开(公告)号：US06492072B2

    公开(公告)日：2002-12-10

    申请号：US09799987

    申请日：2001-03-06

    Applicant: Lisa A. Moore ,  Charlene Smith

    Inventor： Lisa A. Moore ,  Charlene Smith

    IPC: G03F900

    CPC classification number: C03B19/1453 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/21 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  G03F1/60 ,  Y02P40/57

    Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

    Abstract translation: 公开了适用于在低于190nm的VUV波长区域中用于光刻应用的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的，使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是“真空”的氟氧化硅玻璃，其在真空紫外（VUV）波长区域中表现出非常高的透射率，同时保持通常与高纯度熔融石英相关的优异的热和物理性能。 除了含氟并且具有很少或不含OH含量之外，本发明的适合用作157nm的光掩模衬底的氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。

    Synthetic quartz glass preform and device for the production thereof
    139.
    发明申请
    Synthetic quartz glass preform and device for the production thereof 失效
    合成石英玻璃预制件及其制造装置

    公开(公告)号：US20020148256A1

    公开(公告)日：2002-10-17

    申请号：US10161433

    申请日：2002-05-30

    Applicant: Schott ML GmbH

    Inventor： Frank Coriand ,  Andreas Menzel ,  Andreas Voitsch

    IPC: C03B019/06

    CPC classification number: C03C4/0085 ,  C03B19/1407 ,  C03B19/1423 ,  C03B2201/07 ,  C03B2201/21 ,  C03B2201/23 ,  C03B2207/62 ,  C03C3/06 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2203/40

    Abstract: A synthetic quartz glass preform is produced by flame hydrolysis with subsequent cooling and is suitable for the application of high-energy DUV radiation in the wave length range under 250 nm. The preform has a core area which contains null1150 ppm OH, a strain double refraction of null5 nm/cm and a resistance to high-energy DUV radiation as a result of a transmission reduction of nullTnull0.1%/cm thickness. The quartz glass has been exposed to the following radiation: wavelength null1null248 nm, laser shot frequencynull300 Hz, laser shot valuenull109 and luminationnull10 mJ/cm2, and wavelength null2null193 nm, laser shot frequencynull300 Hz, laser shot valuenull109 and lumination

    Abstract translation: 合成石英玻璃预成型体通过随后的冷却通过火焰水解制备，并且适用于在250nm以下的波长范围内应用高能DUV辐射。 预成型体具有包含> = 1150ppm OH的核心区域，<= 5nm / cm的应变双折射和由于DELTAT <= 0.1％/ cm厚度的透射率降低而导致的高能量DUV辐射的耐受性 。 石英玻璃暴露于以下辐射：波长lambd1 = 248nm，激光射击频率> = 300Hz，激光射击值> = 109和照明<= 10mJ / cm 2，波长lambd2 = 193nm，激光射击频率 > = 300Hz，激光拍摄值> = 109和照度<5mJ / cm 2。 用于生产预成型件的装置包括水平定位的具有彼此面对的两个不同尺寸开口的马弗。 较大的开口用于去除预制件，较小的开口用于引入燃烧器。 马弗炉的内腔从较大的开口变窄到较小的开口。

    Synthetic quartz glass preform
    140.
    发明授权
    Synthetic quartz glass preform 有权
    合成石英玻璃预制件

    公开(公告)号：US06423656B1

    公开(公告)日：2002-07-23

    申请号：US09381490

    申请日：1999-09-10

    Applicant: Frank Coriand ,  Andreas Menzel ,  Andreas Voitsch

    Inventor： Frank Coriand ,  Andreas Menzel ,  Andreas Voitsch

    IPC: C03C900

    CPC classification number: C03C4/0085 ,  C03B19/1407 ,  C03B19/1423 ,  C03B2201/07 ,  C03B2201/21 ,  C03B2201/23 ,  C03B2207/62 ,  C03C3/06 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2203/40

    Abstract: The invention relates to a synthetic quartz glass preform which is produced according to the flame hydrolysis technique with subsequent cooling and is suitable for the application of high-energy DUV radiation in the wave length range under 250 nm. Said preform has a core area which contains ≧1150 ppm OH, a strain double refraction of ≦5 nm/cm and a resistance to high-energy DUV radiation as a result of a transmission reduction of &Dgr; T ≦0.1 %/cm thickness. The quartz glass has been exposed to the following radiation: wavelength &lgr;1=248 nm, laser shot frequency ≧300 Hz, laser shot value ≧109 and rumination ≦10 mJ/cm2, and wavelength &lgr;2=193 nm, laser shot frequency ≧300 Hz, laser shot value ≧109 and rumination ≦5 mJ/cm2. A device for producing said preform comprises a horizontally positioned muffle with two different-sized openings facing each other. The larger of said openings is for removing the preform, the smaller opening being for introducing a burner. The internal chamber of the muffle narrows from the larger opening to the smaller opening.

    Abstract translation: 本发明涉及一种根据火焰水解技术制备的合成石英玻璃预制件，随后冷却，适用于在250nm以下的波长范围内应用高能量DUV辐射。 所述预制棒具有包含> = 1150ppm OH的核心区域，<= 5nm / cm的应变双折射和由于DELTA T <= 0.1％/ cm的透射率降低而导致的对高能量DUV辐射的耐受性 厚度。 石英玻璃暴露于以下辐射：波长lambd1 = 248nm，激光射击频率> = 300Hz，激光射击值> = 109和反射<= 10mJ / cm 2，波长lambd2 = 193nm，激光射击频率 > = 300Hz，激光拍摄值> = 109，反光<= 5mJ / cm 2。 用于生产所述预制件的装置包括水平定位的马弗炉，其具有彼此面对的两个不同尺寸的开口。 所述开口中较大的一个用于去除预型件，较小的开口用于引入燃烧器。 马弗炉的内腔从较大的开口变窄到较小的开口。

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