Abstract:
A scanning electron microscope with a length measurement function includes an electron gun emitting an electron beam, a measurement target region setting unit for setting a measurement region for a pattern formed on a sample, a storing unit for storing the designated measurement region, a beam blanker unit for controlling an irradiation of the electron beam depending on the measurement region, and a control unit for extracting the designated measurement region from the storing unit, interrupting the electron beam with the beam blanker unit in a region other than the measurement region, irradiating the electron beam passed through the beam blanker unit onto the sample in the measurement region, capturing an image of the measurement region, and measuring the pattern. The measurement region may be represented by a pair of measurement regions, and the respective regions may have the same areas as each other.
Abstract:
A technique executes autofocus adjustment stably even when a plurality of patterns or foreign matter capable of being imaged only by a specific detector are included independently. Such an image as a concavo-convex image having a weak contrast can be picked up. The technique can automatically focus such an image even when it is difficult to find a focus position in the image. A scanning electron microscope includes a plurality of detectors for detecting secondary signals from a specimen when irradiated with an electron beam, and a calculation unit for combining the signals obtained from the detectors. At least two of the detectors are provided to be symmetric with respect to the electron beam. The focus of the electron beam is adjusted based on the signals of the detectors or on a signal corresponding to a combination of the signals.
Abstract:
Charged particle beam equipment has a processing unit for calibrating dimension values of an enlarged specimen image, and means for changing the amount by which a charged particle beam is scanned. Also, a specimen stand has a mechanism for holding a specimen having a periodical structure or a specimen simultaneously having a periodical structure and a non-periodica structure, and a storage device for automatically changing a magnification for an enlarged specimen image, and storing measured values at all magnifications.
Abstract:
An electron beam apparatus with an aberration corrector using multipole lenses is provided. The electron beam apparatus has a scan mode for enabling the operation of the aberration corrector and a scan mode for disabling the operation of the aberration corrector and the operation of each of the aberration corrector, a condenser lens, and the like is controlled such that the object point of an objective lens does not change in either of the scan modes. If a comparison is made between the secondary electron images of a specimen in the two modes, the image scaling factor and the focus remain unchanged and evaluation and adjustment can be performed by distinctly recognizing only the effect of the aberration corrector. This reduces the time required to adjust an optical axis which has been long due to an axial alignment defect inherent in the aberration corrector and an axial alignment defect in a part other than the aberration corrector which are indistinguishably intermingled with each other.
Abstract:
A method and apparatus according to the present invention define optimal conditions for a scanning electron microscope (SEM), preferably a critical dimension scanning electron microscope (CDSEM). The present invention provides an image quality monitor that utilizes image processing and optimization to maintain image quality at a desired level. Images from a stage sample are automatically collected, while microscope operational parameters are determined based on image processing to enable continuous monitoring of microscope operation. The technique may be performed manually or automatically and generates set points for beam conditioning elements to produce or maintain ideal beam conditions to enhance image quality. The present invention generates data indicating optimized values for each beam alignment parameter. The optimized values are applied to the internal microscope values to optimize the beam. The results may be provided to the technician, a data storage system or directly to the microscope control mechanisms.
Abstract:
An apparatus for processing a defect candidate image, including: an imager for taking an enlarged image of a specimen; an image processor for processing the image taken by the imager to detect defect candidates existing on the specimen and classify the detected defect candidates into one of plural defect classes; a memory for storing information of the defect candidates including the images of the defect candidates and the classified defect class data outputted from the image processor; and a display unit having a display screen for displaying information stored in the memory, wherein the display unit displays an image of the defect candidates together with the defect class data stored in the memory and the displayed defect class data is changeable on the display screen, and the memory changes the stored defect class data of the displayed defect candidate to the changed defect class data.
Abstract:
A pattern inspection apparatus including: an image detecting part for detecting a digital image of an object substrate; a display having a screen on which the digital image of the object substrate and/or a distribution of defect candidates in a map form are displayable; an input device for inputting information of a non-inspection region to be masked on the object substrate by defining a region on the screen on which said distribution of defect candidates is displayed in a map form; a memory part for storing coordinate data, pattern data or feature quantity data of the non-inspection region to be masked on the object substrate inputted on the screen by the input device; and a defect judging part in which the digital image detected by the image detecting part is examined in a state that a region matching with a condition stored in the memory part is masked and a defect is detected in a region other than said masked region.
Abstract:
An inspection system includes a SEM visual inspection apparatus for detecting a defect in a semiconductor sample in steps of manufacturing a semiconductor device and a review apparatus for observing, at a high resolution, the defect in the semiconductor sample detected by the SEM visual inspection apparatus. The system has a function of transmitting an alignment dictionary image as one of alignment parameters to be set by the SEM visual inspection apparatus using an inspection recipe to the review apparatus.
Abstract:
The invention provides a method and apparatus for automatically aligning a beam of charged particles with an aperture. Thereby, a defocusing is introduced and a signal calculated based on an image shift is applied to a deflection unit. Further, a method for correction of astigmatism is provided. Thereby, the sharpness is evaluated for a set of frames generated whilst varying the signals to a stigmator.
Abstract:
In a traditional method for automatically obtaining high-magnification images of defects by using an electron microscope for defect-reviewing of a semiconductor wafer, high-magnification images of a voltage contrast changing part are obtained in the case of defects generating voltage contrast change, this made difficult to observe defects themselves generating voltage contrast change. In the present invention, based on energy of secondary electron to be detected, after obtaining two types of images, namely an image making voltage contrast conspicuous easily, and an image not making it easily, and acquiring a shape change area adjacent to a voltage contrast change area based on this area as a defect location, a high-magnification image can automatically be obtained.