Capacitor and manufacturing method thereof
    132.
    发明授权
    Capacitor and manufacturing method thereof 有权
    电容器及其制造方法

    公开(公告)号:US08199456B2

    公开(公告)日:2012-06-12

    申请号:US12078648

    申请日:2008-04-02

    Abstract: A capacitor and a method of manufacturing the capacitor are disclosed. The capacitor may include a board, a polymer layer formed on one side of the board, a circuit pattern selectively formed over the polymer layer, and a titania nanosheet corresponding with the circuit pattern. Embodiments of the invention can provide flatness in the board, and allows the copper of the board to maintain its functionality as an electrode while increasing the adhesion to the titania nanosheet. The titania nanosheet may thus be implemented on a patterned board in a desired shape, number of layers, and thickness.

    Abstract translation: 公开了电容器和制造该电容器的方法。 电容器可以包括板,形成在板的一侧上的聚合物层,选择性地形成在聚合物层上的电路图案,以及与电路图案对应的二氧化钛纳米片。 本发明的实施例可以提供板中的平坦度,并且允许板的铜保持其作为电极的功能,同时增加与二氧化钛纳米片的粘合性。 因此,二氧化钛纳米片可以在图案化的板上实现所需的形状,层数和厚度。

    Integrating three-dimensional high capacitance density structures
    133.
    发明授权
    Integrating three-dimensional high capacitance density structures 有权
    集成三维高电容密度结构

    公开(公告)号:US08174017B2

    公开(公告)日:2012-05-08

    申请号:US11505201

    申请日:2006-08-16

    Abstract: Disclosed are three-dimensional dielectric structures on high surface area electrodes and fabrication methods. Exemplary structures comprise a copper foil substrate, trench electrodes or high surface area porous electrode structures formed on the substrate, a insulating thin film formed on the surface and laminating the foil on a organic substrate. A variety of materials may be used to make the films including perovksite ceramics such as barium titanate, strontium titanate, barium strontium titanate (BST), lead zirconate titanate (PZT); other intermediate dielectric constant films such as zinc oxide, aluminum nitride, silicon nitride; typical paraelectrics such as tantalum oxide, alumina, and titania. The films may be fabricated using sol-gel, hydrothermal synthesis, anodization or vapor deposition techniques.

    Abstract translation: 公开了高表面电极上的三维电介质结构和制造方法。 示例性结构包括铜箔衬底,形成在衬底上的沟槽电极或高表面积多孔电极结构,在表面上形成的绝缘薄膜,并将箔层压在有机衬底上。 可以使用各种材料来制造包括钛酸钡,钛酸锶,钛酸锶钡(BST),锆钛酸铅(PZT)等周波陶瓷的膜。 其它中间介电常数膜如氧化锌,氮化铝,氮化硅; 典型的顺电介质如氧化钽,氧化铝和二氧化钛。 可以使用溶胶 - 凝胶,水热合成,阳极氧化或气相沉积技术来制造膜。

    Electronic Substrate Having Low Current Leakage and High Thermal Conductivity and Associated Methods
    137.
    发明申请
    Electronic Substrate Having Low Current Leakage and High Thermal Conductivity and Associated Methods 审中-公开
    具有低电流泄漏和高导热性和相关方法的电子基板

    公开(公告)号:US20110127562A1

    公开(公告)日:2011-06-02

    申请号:US12787074

    申请日:2010-05-25

    Abstract: Electrical substrates having low current leakage and high thermal conductivity, including associated methods, are provided. In one aspect for example, a multilayer substrate having improved thermal conductivity and dielectric properties can include a metal layer having a working surface with a local Ra of greater than about 0.1 micron, a dielectric layer coated on the working surface of the metal layer, and a thermally conductive insulating layer disposed on the dielectric layer, wherein the multilayer substrate has a minimum resistivity between the metal layer and the thermally conductive insulating layer across all of the working surface of at least 1×106 ohms.

    Abstract translation: 提供了具有低电流泄漏和高导热性的电气基板,包括相关方法。 在一个方面,例如,具有改善的导热性和介电性能的多层基底可以包括具有局部Ra大于约0.1微米的工作表面的金属层,涂覆在金属层的工作表面上的电介质层,以及 布置在所述电介质层上的导热绝缘层,其中所述多层衬底在所述工作表面上的所述金属层和所述导热绝缘层之间具有至少为1×106欧姆的最小电阻率。

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