公开(公告)号：US20230307239A1

公开(公告)日：2023-09-28

申请号：US18190542

申请日：2023-03-27

Applicant: ASM IP Holding, B.V.

Inventor： Sean T. Barry ,  Goran Bacic ,  Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Peter Gordon

IPC: H01L21/285 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/45527 ,  C23C16/45553

Abstract: The current disclosure relates to vapor phase methods of depositing a metal or a semimetal-comprising materials on a substrate. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal-comprising material on the substrate. The disclosure further relates to materials and structures deposited by the disclosed methods, as well as deposition assemblies.

公开(公告)号：US20230298920A1

公开(公告)日：2023-09-21

申请号：US18120752

申请日：2023-03-13

Applicant: ASM IP Holding B.V.

Inventor： Sergei Golovkov ,  Koji Tanaka

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01L21/67288 ,  H01J37/32724 ,  H01J2237/24564 ,  H01J2237/3321

Abstract: Electrostatic chuck assemblies, systems including the assemblies, and methods of using the electrostatic chuck assemblies and systems are disclosed. Exemplary electrostatic chuck assemblies include a detector or circuit to detect a chucking event, such as insufficient chucking power and/or substrate warpage. Exemplary systems and methods can adjust a chucking power based on the measured or determined chucking event.

公开(公告)号：US20230290613A1

公开(公告)日：2023-09-14

申请号：US18179187

申请日：2023-03-06

Applicant: ASM IP HOLDING B.V.

Inventor： Varun Sharma ,  Tom Blomberg

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32816 ,  H01J37/32357 ,  H01J2237/182 ,  H01J2237/24585 ,  H01J2237/332

Abstract: A semiconductor processing system for providing a remotely generated excited species of a processing gas to a reactor. The semiconductor processing system comprises a remotely positioned plasma generator in fluid communication with a plasm source vessel and a gas line to convey an excited species generated in the plasma generator to the reactor. The gas line may be a double-walled pipe comprising an outer pipe and a perforated an inner pipe or a gas line to which DC bias voltage is applied.

公开(公告)号：US20230280199A1

公开(公告)日：2023-09-07

申请号：US18196633

申请日：2023-05-12

Applicant: ASM IP Holding B.V.

Inventor： Andrew Michael Yednak, III

IPC: G01F23/263 ,  G01F23/296

CPC classification number: G01F23/265 ,  G01F23/268 ,  G01F23/2961 ,  G01F23/2921

Abstract: A chemical vessel used for holding a liquid chemical precursor is disclosed comprising a liquid level sensor tube. The liquid level sensor tube is configured to operate in an environment where the liquid chemical precursor is heated to a point of boiling or vaporization. The liquid level sensor tube comprises housing with a slot built in to prevent any false readings of sensors disposed within the liquid level sensor tube.

公开(公告)号：US11746414B2

公开(公告)日：2023-09-05

申请号：US17835082

申请日：2022-06-08

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44

CPC classification number: C23C16/455 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52

Abstract: Exemplary embodiments of the disclosure provide improved reactor systems, assemblies, and methods for controlling a temperature within the reactor system, such as a temperature of a gas supply unit. Exemplary systems and methods employ an exhaust unit to cause movement of a fluid over a portion of the gas supply unit to better control the temperature of the gas supply unit.

公开(公告)号：US20230265582A1

公开(公告)日：2023-08-24

申请号：US18110403

申请日：2023-02-16

Applicant: ASM IP Holding B.V.

Inventor： Gregory Deye ,  Yen Chun Fu ,  Arun Murali

IPC: C30B33/08 ,  C30B25/18 ,  C30B29/06

CPC classification number: C30B33/08 ,  C30B25/186 ,  C30B29/06

Abstract: A method of processing a surface of an epitaxially grown silicon film includes using a radical species to remove random surface terminations from the surface of the epitaxially grown silicon film and to generate a substantially uniform distribution of surface terminations. Reaction systems for performing such a method, and epitaxially grown films prepared using such a method, also are provided.

公开(公告)号：US20230265556A1

公开(公告)日：2023-08-24

申请号：US18142147

申请日：2023-05-02

Applicant: ASM IP Holding B.V. ,  Universiteit Gent

Inventor： Matthias Minjauw ,  Jolien Dendooven ,  Christophe Detavernier

IPC: C23C16/06 ,  C23C16/40 ,  C23C16/455 ,  H01L21/285

CPC classification number: C23C16/06 ,  C23C16/40 ,  C23C16/45527 ,  H01L21/28556

Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of platinum, aluminum, titanium, bismuth, zinc, and combination thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide, wherein the ruthenium-containing film comprises at least one of a ruthenium-platinum alloy, or a ternary ruthenium oxide. Device structures including a ruthenium-containing film deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11735414B2

公开(公告)日：2023-08-22

申请号：US17352330

申请日：2021-06-20

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3105 ,  C23C16/40 ,  H10B69/00 ,  C23C16/56

CPC classification number: H01L21/0234 ,  C23C16/402 ,  H01L21/0228 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/31111 ,  H10B69/00 ,  C23C16/401 ,  C23C16/56

Abstract: A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and/or H2; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.

公开(公告)号：US20230260782A1

公开(公告)日：2023-08-17

申请号：US18305875

申请日：2023-04-24

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/02211 ,  H01L21/02274

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

公开(公告)号：US20230259043A1

公开(公告)日：2023-08-17

申请号：US18139459

申请日：2023-04-26

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  David Kurt de Roest

IPC: G03F7/00 ,  H01L23/00

CPC classification number: G03F7/70783 ,  H01L23/562 ,  G03F7/70033

Abstract: Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.