公开(公告)号：US20150158723A1

公开(公告)日：2015-06-11

申请号：US14624008

申请日：2015-02-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kai-Chih Liang ,  Chia-Hua Chu ,  Te-Hao Lee ,  Jiou-Kang Lee ,  Chung-Hsien Lin

IPC: B81B7/00

CPC classification number: B81C1/00515 ,  B81B7/0006 ,  B81B7/0077 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81B2207/07 ,  B81B2207/095 ,  B81B2207/096 ,  B81C1/00293 ,  B81C1/00301 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/0145 ,  B81C2203/035 ,  H01L2224/11

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

Abstract translation: 微机电系统（MEMS）装置可以包括在第一基板上的MEMS结构。 MEMS结构包括可移动元件。 在第一衬底上沉积第一导电材料并蚀刻第二衬底中的沟槽。 用第二导电材料填充沟槽并在第二导电材料和第二衬底上沉积第三导电材料。 将第一基板和第二基板接合并使第二基板的背面变薄，从而在沟槽中露出第二导电材料。

公开(公告)号：US20150145075A1

公开(公告)日：2015-05-28

申请号：US14127536

申请日：2013-08-23

Applicant: Rashed Mahameed ,  Kristen L. Dorsey ,  Mamdouh O. M M Abdelmejeed ,  Mohamed A. Abdelmoneum

Inventor： Rashed Mahameed ,  Kristen L. Dorsey ,  Mamdouh O. M M Abdelmejeed ,  Mohamed A. Abdelmoneum

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0051 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0145 ,  B81C1/00166 ,  B81C1/00246 ,  B81C1/00531 ,  B81C2203/0714 ,  B81C2203/0742 ,  G01C19/5733 ,  G01P15/125 ,  G01P2015/0814

Abstract: A MEMS device, such as an accelerometer or gyroscope, fabricated in interconnect metallization compatible with a CMOS microelectronic device. In embodiments, a proof mass has a first body region utilizing a thick metal layer that is separated from a thin metal layer. The thick metal layer has a film thickness that is significantly greater than that of the thin metal layer for increased mass. The proof mass further includes a first sensing structure comprising the thin metal layer, but lacking the thick metal layer for small feature sizes and increased capacitive coupling to a surrounding fame that includes a second sensing structure comprising the thin metal layer, but also lacking the thick metal layer. In further embodiments, the frame is released and includes regions with the thick metal layer to better match film stress-induced static deflection of the proof mass.

Abstract translation: MEMS器件，例如加速度计或陀螺仪，其制造在与CMOS微电子器件兼容的互连金属化中。 在实施例中，检验质量体具有利用与金属薄层分离的厚金属层的第一体区。 厚金属层的膜厚度明显大于金属层的厚度，以增加质量。 检测质量还包括第一感测结构，其包括薄金属层，但是缺少用于小特征尺寸的厚金属层和增加到周围声望的电容耦合，其包括包含薄金属层的第二感测结构，但是也缺少厚的 金属层。 在另外的实施例中，框架被释放并且包括具有较厚金属层的区域以更好地匹配膜应力引起的证明块的静态偏转。

公开(公告)号：US20150137068A1

公开(公告)日：2015-05-21

申请号：US14395626

申请日：2013-04-19

Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

Inventor： Sebastian Thimotee Bartsch ,  Mihai Adrian Ionescu

IPC: H03H9/24 ,  B81B3/00

CPC classification number: H01L41/0966 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B82Y15/00 ,  H01H59/0009 ,  H01L41/0933 ,  H01L41/1134 ,  H03H9/02259 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/02314

Abstract: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.

Abstract translation: 一种无连接纳米机电（NEM）谐振器，包括连接漏极区域和源极区域的高度掺杂的导电沟道; 导电沟道区域是可移动的，并且整个结构至少固定在放置在源极和漏极区域上的这两个端点处; 至少一个固定栅极布置成控制高掺杂导电沟道中的耗尽电荷，从而调制高度掺杂的导电沟道的横截面的尺寸。 在从固定栅电极到高度掺杂的导电沟道取向的电场方向上的横截面的尺寸被设计成使得其可以在耗尽电荷的作用下减小，使得 通过固定栅电极的控制可以实现高掺杂导电沟道中的全部耗尽。

公开(公告)号：US09021887B2

公开(公告)日：2015-05-05

申请号：US13329618

申请日：2011-12-19

Applicant: Franz-Peter Kalz ,  Horst Theuss ,  Bernhard Winkler ,  Khalil Hosseini ,  Joachim Mahler ,  Manfred Mengel

Inventor： Franz-Peter Kalz ,  Horst Theuss ,  Bernhard Winkler ,  Khalil Hosseini ,  Joachim Mahler ,  Manfred Mengel

IPC: G01B7/16 ,  B81B7/02 ,  G01L9/00 ,  G01L19/00

CPC classification number: B81B7/02 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C2203/0154 ,  G01L1/18 ,  G01L9/0072 ,  G01L19/0092 ,  G01L19/02

Abstract: Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Abstract translation: 微机械半导体感测装置包括被配置为产生电感测信号的微机械感测结构和设置在微机械感测结构中的压阻感测装置，所述压阻感测装置被布置成感测扰动电感测信号的机械应力，并被配置为 基于感测到的电感测信号的机械应力产生电干扰信号。

公开(公告)号：US20150097253A1

公开(公告)日：2015-04-09

申请号：US14045855

申请日：2013-10-04

Applicant: Analog Devices, Inc.

Inventor： Christine H. Tsau ,  Li Chen ,  Kuang L. Yang

IPC: B81B7/00 ,  B81C1/00 ,  H01L29/84

CPC classification number: B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01P1/023 ,  G01P15/0802 ,  H01L29/84

Abstract: A MEMS apparatus has a substrate, a cap forming first and second chambers with the base, and movable microstructure within the first and second chambers. To control pressures, the MEMS apparatus also has a first outgas structure within the first chamber. The first outgas structure produces a first pressure within the first chamber, which is isolated from the second chamber, which, like the first chamber, has a second pressure. The first pressure is different from that in the second pressure (e.g., a higher pressure or lower pressure).

Abstract translation: MEMS装置具有基板，形成具有基座的第一和第二室的盖以及第一和第二室内的可移动微结构。 为了控制压力，MEMS装置还在第一室内具有第一排气结构。 第一排气结构在第一室内产生第一压力，该第一压力与第二室隔离，其与第一室相似，具有第二压力。 第一压力与第二压力（例如，较高压力或更低压力）不同。

公开(公告)号：US08975671B2

公开(公告)日：2015-03-10

申请号：US13521141

申请日：2011-01-10

Applicant: Arnd Ten Have

Inventor： Arnd Ten Have

IPC: H01L29/00

CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

Abstract: A semiconductor component is provided with a semiconductor substrate, in the upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length and width is designed within the active region. Each of the ends of the channel region located in the longitudinal extension is followed by a contacting region made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material, which comprises transverse edges defining the length of the channel region and longitudinal edges defining the width of the channel region and which comprises an edge recess at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions that adjoin the channel region extending all the way into said edge recess.

Abstract translation: 半导体部件设置有半导体基板，其上表面通过离子注入引入由第一导电类型的材料制成的有源区。 具有限定长度和宽度的半导体沟道区域设计在有源区域内。 位于纵向延伸部中的通道区域的每个端部之后是由第二导电类型的半导体材料制成的接触区域。 沟道区域被离子注入掩模材料覆盖，离子注入掩模材料包括限定沟道区域的长度的横向边缘和限定沟道区域的宽度的纵向边缘，并且其包括在与纵向方向对准的每个相对的横向边缘处的边缘凹部 通道区域的延伸端，与通道区域相邻的接触区域一直延伸到所述边缘凹部中。

公开(公告)号：US20150054096A1

公开(公告)日：2015-02-26

申请号：US14529824

申请日：2014-10-31

Applicant: RUBEN B. MONTEZ ,  Robert F. Steimle

Inventor： RUBEN B. MONTEZ ,  Robert F. Steimle

IPC: B81B3/00

CPC classification number: B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0038 ,  B81C1/00952 ,  B81C2201/0169 ,  B81C2201/112 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based silicon oxide layer. This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.

Abstract translation: 提供了一种用于通过减少在制造期间可能积聚在多晶硅表面上的基于TEOS的氧化硅膜的碳来减少MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层和基于TEOS的氧化硅层之间沉积碳阻挡材料膜。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。

公开(公告)号：US20150020591A1

公开(公告)日：2015-01-22

申请号：US14330282

申请日：2014-07-14

Applicant: Seiko Epson Corporation

Inventor： Satoru TANAKA

IPC: G01P15/125 ,  G01P1/00

CPC classification number: G01P15/125 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/0235 ,  B81B2203/0109 ,  G01C19/5705 ,  G01P1/00 ,  G01P2015/0831

Abstract: A functional device includes a movable body and a supporting section configured to support the movable body via coupling sections extending along a first axis. The supporting section includes a connection region connected to the coupling sections and provided along the first axis and contact regions provided on the outer side of the connection region in plan view and electrically connected to a wire provided on a substrate.

Abstract translation: 一种功能装置包括可移动体和支撑部分，该支撑部分构造成通过沿着第一轴线延伸的联接部分支撑可移动体。 支撑部分包括连接到联接部分并且沿着第一轴线设置的连接区域和在平面图中设置在连接区域的外侧上的接触区域，并且电连接到设置在基板上的线材。

公开(公告)号：US20150020590A1

公开(公告)日：2015-01-22

申请号：US14379744

申请日：2013-03-01

Applicant: California Institute of Technology ,  University of Rochester

Inventor： Oskar Painter ,  Martin Winger ,  Qiang Lin ,  Alexander Krause ,  Tim D. Blasius

IPC: G01P15/093 ,  G01N21/55 ,  B82Y99/00 ,  B81B3/00 ,  B81C1/00 ,  G01N21/59 ,  H01L21/02

CPC classification number: G01P15/093 ,  B81B3/0051 ,  B81B3/0067 ,  B81B3/0083 ,  B81B2201/0235 ,  B81C1/00015 ,  B82Y99/00 ,  G01N21/55 ,  G01N21/59 ,  G01N2201/06113 ,  G01N2201/063 ,  H01L21/02373

Abstract: Technologies are generally described for operating and manufacturing optomechanical accelerometers. In some examples, an optomechanical accelerometer device is described that uses a cavity resonant displacement sensor based on a zipper photonic crystal nano-cavity to measure the displacement of an integrated test mass generated by acceleration applied to the chip. The cavity-resonant sensor may be fully integrated on-chip and exhibit an enhanced displacement resolution due to its strong optomechanical coupling. The accelerometer structure may be fabricated in a silicon nitride thin film and constitute a rectangular test mass flexibly suspended on high aspect ratio inorganic nitride nano-tethers under high tensile stress. By increasing the mechanical Q-factors through adjustment of tether width and tether length, the noise-equivalent acceleration (NEA) may be reduced, while maintaining a large operation bandwidth. The mechanical Q-factor may be improved with thinner (e.g.,

Abstract translation: 技术通常被描述为操作和制造光机加速度计。 在一些示例中，描述了使用基于拉链光子晶体纳米腔的空腔谐振位移传感器来测量由施加到芯片的加速度产生的集成测试质量的位移的光机械加速度计装置。 空腔谐振传感器可以完全集成在芯片上，并由于其强大的光机械耦合而呈现出增强的位移分辨率。 加速度计结构可以制造在氮化硅薄膜中，并且在高拉伸应力下构成柔性地悬挂在高纵横比无机氮化物纳米系绳上的矩形测试质量。 通过调整系绳宽度和系绳长度来增加机械Q因子，可以降低噪声等效加速度（NEA），同时保持较大的运行带宽。 可以通过更薄（例如<1微米）和更长的系链（例如10-560微米）来改善机械Q因子。

公开(公告)号：US08932893B2

公开(公告)日：2015-01-13

申请号：US13868125

申请日：2013-04-23

Applicant: Matthieu Lagouge

Inventor： Matthieu Lagouge

IPC: H01L29/84 ,  H01L21/00 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00801 ,  B81B2201/0235 ,  B81B2203/0307 ,  B81C2201/014 ,  B81C2203/036

Abstract: A method of fabricating a microelectromechanical (MEMS) device includes bonding a transducer wafer to a substrate wafer along a bond interface. An unpatterned transducer layer included within the transducer wafer is patterned. A release etch process is then performed during which a sacrificial layer is exposed to a selected release etchant to remove at a least a portion of the sacrificial layer through the openings in the patterned transducer layer. A release etch stop layer is formed between the sacrificial layer and the bond interface prior to exposing the sacrificial layer to the release etchant. The release etch stop layer prevents the ingress of the selected release etchant into the region of the MEMS device containing the bond interface during the release etch process.

Abstract translation: 一种制造微机电（MEMS）装置的方法包括沿着键合界面将换能器晶片连接到衬底晶片。 包含在换能器晶片内的未图案化的换能器层被图案化。 然后执行释放蚀刻工艺，在此期间，牺牲层暴露于所选择的释放蚀刻剂，以通过图案化的换能器层中的开口在牺牲层的至少一部分上移除。 在将牺牲层暴露于释放蚀刻剂之前，在牺牲层和接合界面之间形成释放蚀刻停止层。 释放蚀刻停止层在释放蚀刻工艺期间防止所选择的剥离蚀刻剂进入包含结合界面的MEMS器件的区域中。