公开(公告)号：US20150315016A1

公开(公告)日：2015-11-05

申请号：US14311034

申请日：2014-06-20

Applicant: mCube Inc.

Inventor： SHINGO YONEOKA ,  Anthony F. Flannery, JR.

IPC: B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00246 ,  B81B7/02 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0742 ,  G01L9/0042 ,  G01L9/0045 ,  G01L9/0054 ,  G01L9/0073 ,  G01L19/0084 ,  G01L19/143

Abstract: An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures.

Abstract translation: 公开了一种集成的压力感测装置及其制造方法。 该方法可以包括提供具有表面区域的衬底构件，并且形成覆盖衬底的CMOS IC层并形成覆盖在CMOS IC层上的氧化物层。 可以去除氧化物层的一部分以形成空腔区域。 可以将单晶硅晶片粘合在氧化物表面区域上以密封空腔区域。 接合工艺可以包括熔接或共熔粘合工艺。 可以将晶片减薄到所需的厚度，并且可以去除部分并用金属材料填充以形成通孔结构。 压力传感器装置可以由晶片形成，并可与来自晶片的另一传感器共同制造。 压力传感器和另一个传感器可以共享腔体压力或具有单独的腔体压力。

公开(公告)号：US20150307346A1

公开(公告)日：2015-10-29

申请号：US14735652

申请日：2015-06-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu

IPC: B81B7/04

CPC classification number: B81B7/04 ,  B81B7/0032 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00293 ,  B81C1/00309 ,  B81C3/001 ,  B81C2203/0118

Abstract: Embodiments of the present disclosure include MEMS devices and methods for forming MEMS devices. An embodiment is a method for forming a microelectromechanical system (MEMS) device, the method including forming a MEMS wafer having a first cavity, the first cavity having a first pressure, and bonding a carrier wafer to a first side of the MEMS wafer, the bonding forming a second cavity, the second cavity having a second pressure, the second pressure being greater than the first pressure. The method further includes bonding a cap wafer to a second side of the MEMS wafer, the second side being opposite the first side, the bonding forming a third cavity, the third cavity having a third pressure, the third pressure being greater than the first pressure and less than the second pressure.

Abstract translation: 本公开的实施例包括MEMS器件和用于形成MEMS器件的方法。 一个实施例是用于形成微机电系统（MEMS）装置的方法，该方法包括形成具有第一腔的MEMS晶片，第一腔具有第一压力，并将载体晶片接合到MEMS晶片的第一侧， 接合形成第二腔，所述第二腔具有第二压力，所述第二压力大于所述第一压力。 该方法还包括将盖晶片接合到MEMS晶片的第二侧，第二侧与第一侧相对，接合形成第三腔，第三腔具有第三压力，第三压力大于第一压力 并且小于第二压力。

公开(公告)号：US20150274505A1

公开(公告)日：2015-10-01

申请号：US14537898

申请日：2014-11-10

Applicant: Maxim Integrated Products, Inc.

Inventor： Antonio Molfese ,  Luca Coronato ,  Gabriele Cazzaniga ,  Luigi Esposito

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0078 ,  B81B7/0054 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C1/00682 ,  G01L9/0073

Abstract: This invention relates generally to semiconductor manufacturing and packaging and more specifically to semiconductor manufacturing in MEMS (Microelectromechanical systems) inertial sensing products. Embodiments of the present invention improve pressure sensor performance (e.g., absolute and relative accuracy) by increasing pressure insensitivity to changes in thermo-mechanical stress. The pressure insensitivity can be achieved by using the array of pressure sensing membranes, suspended sensing electrodes, and dielectric anchors.

Abstract translation: 本发明一般涉及半导体制造和封装，更具体地涉及MEMS（微机电系统）惯性感测产品中的半导体制造。 本发明的实施例通过增加对热机械应力变化的压力不敏感性来改善压力传感器性能（例如，绝对和相对精度）。 压力不敏感性可以通过使用压力传感膜，悬浮感应电极和电介质锚的阵列来实现。

公开(公告)号：US20150268115A1

公开(公告)日：2015-09-24

申请号：US14661430

申请日：2015-03-18

Applicant: Commissariat a l'energie atomique et aux energies alternatives

Inventor： Philippe Robert ,  Bernard Diem ,  Guillaume Jourdan

IPC: G01L9/00 ,  B81B3/00

CPC classification number: G01L9/0072 ,  B81B3/0021 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0154 ,  G01L9/001 ,  G01L9/0019 ,  G01L9/0052 ,  G01L9/006 ,  G01L9/0073 ,  G01L9/0086 ,  G01L13/025

Abstract: MEMS and/or NEMS differential pressure measurement sensor comprising at least one first membrane and at least one second membrane, each suspended from a substrate, the first membrane having a face subjected to a reference pressure and a second face subjected to a first pressure to be detected, the second membrane having a first face subjected to the reference pressure and a second face subjected to a second pressure to be detected, a rigid beam of longitudinal axis articulated with respect to the substrate by a pivot link around an axis, said beam being solidly connected by a first zone to the first membrane and by a second zone to the second membrane such that the pivot link is situated between the first zone and the second zone of the beam, a sensor of measuring the movement of the beam around the axis, said sensor being arranged at least in part on the substrate.

Abstract translation: MEMS和/或NEMS差压测量传感器包括至少一个第一膜和至少一个第二膜，每个第一膜和第二膜分别从基板悬挂，第一膜具有经受参考压力的表面和经受第一压力的第二面 所述第二膜具有经受参考压力的第一面和经受待检测的第二压力的第二面，通过围绕轴线的枢转连杆相对于所述基板铰接的纵向轴的刚性梁，所述梁是 通过第一区域牢固地连接到第一膜片，并且通过第二区域连接到第二膜片，使得枢转连杆位于梁的第一区域和第二区域之间，传感器测量梁围绕轴线的运动 ，所述传感器至少部分地布置在所述基板上。

公开(公告)号：US20150253375A1

公开(公告)日：2015-09-10

申请号：US14197564

申请日：2014-03-05

Applicant: Infineon Technologies AG

Inventor： DIRK MEINHOLD

IPC: G01R31/26 ,  B81B7/02 ,  H01L21/66 ,  B81C99/00

CPC classification number: G01R31/2644 ,  B81B7/02 ,  B81B2201/0264 ,  B81C99/0035 ,  G01L27/007 ,  H01L22/30 ,  H01L22/34

Abstract: A micro-electro-mechanical device comprising a movable structure, wherein the movable structure comprises an test structure changing an electrical characteristic, if the movable structure is damaged.

Abstract translation: 一种包括可移动结构的微机电装置，其中如果可移动结构被损坏，则可移动结构包括改变电特性的测试结构。

公开(公告)号：US20150241465A1

公开(公告)日：2015-08-27

申请号：US14712004

申请日：2015-05-14

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takahiro KONISHI

IPC: G01P15/12 ,  B81B3/00 ,  G01L9/00

CPC classification number: G01P15/123 ,  B81B3/0072 ,  B81B3/0086 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0109 ,  G01L9/0044 ,  G01L9/0052 ,  G01L9/0054 ,  G01P15/0802 ,  H01L29/84

Abstract: A pressure sensor includes a SOI substrate that includes a Si substrate, a SiO2 layer, and a surface Si film. An opening portion is formed in the Si substrate through etching, and a displacement portion having a membrane structure is defined by the surface Si film and the SiO2 layer in this area. A piezoresistive element is provided in the displacement portion. The displacement portion bends in response to a pressure to be detected and a resistance value of the piezoresistive element changes in response thereto. A thickness of the membrane-structure displacement portion is not less than about 1 μm and not greater than about 10 μm, and a depth of a peak of an impurity concentration of the piezoresistive element is greater than about 0.5 μm and at a position less than about ½ of the depth of the thickness of the displacement portion.

Abstract translation: 压力传感器包括SOI衬底，其包括Si衬底，SiO 2层和表面Si膜。 通过蚀刻在Si衬底中形成开口部分，并且在该区域中由表面Si膜和SiO 2层限定具有膜结构的位移部分。 压电元件设置在位移部分中。 位移部分响应于待检测的压力弯曲，并且压阻元件的电阻值响应于此而变化。 膜结构位移部分的厚度不小于约1μm且不大于约10μm，并且压阻元件的杂质浓度的峰值深度大于约0.5μm，并且在小于 约为位移部分厚度的一半。

公开(公告)号：US09117932B2

公开(公告)日：2015-08-25

申请号：US14027037

申请日：2013-09-13

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： Kimitoshi Sato

IPC: G01L9/00 ,  H01L21/00 ,  H01L29/84 ,  H01L27/06

CPC classification number: H01L29/84 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0735 ,  B81C2203/0778 ,  G01L9/0042 ,  G01L9/0073 ,  H01L27/0617

Abstract: At a pressure sensor region, a pressure sensor including a fixed electrode, a void and a movable electrode is formed. At a CMOS region, a memory cell transistor and a field effect transistor are formed. An etching hole communicating with the void is closed by a first sealing film. The void is formed by removing a region of a film identical to the film of a gate electrode of the memory cell transistor. The movable electrode is formed of a film identical to the film of a gate electrode.

Abstract translation: 在压力传感器区域，形成包括固定电极，空隙和可动电极的压力传感器。 在CMOS区域，形成存储单元晶体管和场效应晶体管。 与空隙连通的蚀刻孔由第一密封膜封闭。 通过去除与存储单元晶体管的栅电极的膜相同的膜的区域来形成空隙。 可动电极由与栅电极的膜相同的膜形成。

公开(公告)号：US20150235980A1

公开(公告)日：2015-08-20

申请号：US14701589

申请日：2015-05-01

Applicant: Shinya YAMAGUCHI ,  Tomohito TAKI ,  Takashi USUI ,  Soichiro SUZU

Inventor： Shinya YAMAGUCHI ,  Tomohito TAKI ,  Takashi USUI ,  Soichiro SUZU

IPC: H01L23/00

CPC classification number: H01L24/29 ,  B81B7/0048 ,  B81B2201/0264 ,  B81B2207/012 ,  B81B2207/07 ,  G01L19/147 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/26122 ,  H01L2224/2956 ,  H01L2224/29599 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/481 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/8314 ,  H01L2224/85181 ,  H01L2224/92247 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A sensor apparatus includes a semiconductor sensor device including a first attachment surface, a base part being wire-bonded to the semiconductor sensor device and including a second attachment surface, and a spacer being interposed between the first and second attachment surfaces and having a target attachment surface to which at least one of the first and second attachment surfaces is adhered via a die-bond resin. A total area of the target attachment surface is smaller than a total area of the first attachment surface.

Abstract translation: 传感器装置包括半导体传感器装置，其包括第一附接表面，基底部分被引线接合到半导体传感器装置并且包括第二附接表面，以及间隔件插入在第一和第二附接表面之间并且具有目标附件 第一和第二附接表面中的至少一个经由模片接合树脂粘合到该表面上。 目标附着表面的总面积小于第一附接表面的总面积。

公开(公告)号：US20150211949A1

公开(公告)日：2015-07-30

申请号：US14430321

申请日：2013-06-18

Applicant: THE UNIVERSITY OF TOKYO ,  KABUSHIKI KAISHA SAGINOMIYA SEISAKUSHO

Inventor： Hiroyuki Fujita ,  Hiroshi Toshiyoshi ,  Hiroyuki Mitsuya

IPC: G01L9/00 ,  B81C1/00

CPC classification number: G01L9/0073 ,  B81B2201/0264 ,  B81C1/00047 ,  B81C1/00293 ,  G01L9/0042 ,  H01L29/84

Abstract: [Problem]The enclosing layer is not invaded in the gap, and the gap might not be buried, and the cavity which has the predetermined shape to be aimed can be formed by an easy step.[Resolution Approach]In the invention, comprising; the base member including the semiconductor 12, the interlayer 14, which is formed on the base member 12 and has the nonconductivity, the upper layer 16, which is formed on the interlayer 14 and includes the semiconductor, the opening portion 18 formed to the upper layer 16, the gas-permeable sealing layer 20, which is formed to seal the opening portion 18, wherein the cavity 22 is a cavity which is formed by removing the interlayer 14 with an etching gas that is penetrated through the sealing layer 20.

Abstract translation: [问题]封闭层不会在间隙中侵入，并且间隙可能不被埋入，并且具有预定形状的目标腔体可以通过简单的步骤形成。 [解决方法]在本发明中，包括： 包括半导体12的基底构件，形成在基底构件12上并具有非导电性的中间层14，形成在中间层14上并包括半导体的上层16，形成在上部的开口部18 层16，形成为密封开口部分18的透气性密封层20，其中空腔22是通过穿过密封层20的蚀刻气体去除中间层14而形成的空腔。

公开(公告)号：US20150192487A1

公开(公告)日：2015-07-09

申请号：US14150019

申请日：2014-01-08

Applicant: General Electric Company

Inventor： Nickolai S. Belov ,  Lihua Li ,  Kim Vu ,  Dinh Vu

IPC: G01L9/06 ,  B81C1/00 ,  G01L9/00

CPC classification number: B81C1/00158 ,  B81B3/0072 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0133 ,  G01L9/0044 ,  G01L9/0047 ,  G01L19/0092 ,  G01L19/0618

Abstract: Low pressure sensors and flow sensors are provided. In some embodiments, a pressure sensor can include a sensor die that includes a substrate and a cavity that is formed in a bottom side of the substrate and that defines an elastic element including a thin diaphragm area and a rigid island. A maximum thickness of the rigid island can be substantially smaller than a thickness of the substrate and can be greater than a thickness of the thin diaphragm area. Side walls of the rigid island can be substantially parallel to one another and can be substantially perpendicular to top and bottom surfaces of the wafer and substantially perpendicular to top and bottom surfaces of the die. The side walls of the at least one rigid island can be formed by wet etching the cavity into the die. The wafer can have an impurity diffused in one or more portions thereof prior to the wet etching such that the one or more portions are doped.

Abstract translation: 提供低压传感器和流量传感器。 在一些实施例中，压力传感器可以包括传感器管芯，其包括衬底和形成在衬底的底侧中并且限定包括薄隔膜区域和刚性岛的弹性元件的空腔。 刚性岛的最大厚度可以基本上小于衬底的厚度，并且可以大于薄隔膜面积的厚度。 刚性岛的侧壁可以基本上彼此平行，并且可以基本上垂直于晶片的顶表面和底表面并且基本垂直于管芯的顶表面和底表面。 至少一个刚性岛的侧壁可以通过将腔浸入模具中而形成。 在湿蚀刻之前，晶片可以具有在其一个或多个部分中扩散的杂质，使得一个或多个部分被掺杂。