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    Wet metal-etching method and apparatus used for MEMS
    141.
    发明申请
    Wet metal-etching method and apparatus used for MEMS 有权
    用于MEMS的湿式金属蚀刻方法和设备

    公开(公告)号：US20110223771A1

    公开(公告)日：2011-09-15

    申请号：US12724165

    申请日：2010-03-15

    Applicant: Yadong Jiang ,  Zhiming Wu ,  Tao Wang ,  Weizhi Li ,  Xiaolin Han

    Inventor： Yadong Jiang ,  Zhiming Wu ,  Tao Wang ,  Weizhi Li ,  Xiaolin Han

    IPC: H01L21/306

    CPC classification number: H01L21/67028 ,  B81C1/00571 ,  B81C2201/0133 ,  H01L21/32134 ,  H01L21/67086

    Abstract: The present invention provides a method of wet etching a silicon slice including a silicon substrate and a metal film layer thereon comprising steps of: performing lithographic process to the silicon slice forming a masked silicon slice comprising the silicon substrate and a partially masked metal film thereon; immersing the masked silicon slice into an etchant; rotating the masked silicon slice in the etchant; injecting high-purity nitrogen gas into the etchant for agitating the etchant; removing the masked silicon slice out of the etchant, upon completion of etching; and rinsing the masked silicon slice with deionized water.

    Abstract translation: 本发明提供了一种湿式蚀刻包括硅衬底和金属膜层的硅片的方法，包括以下步骤：对形成包含硅衬底和部分掩蔽的金属膜的掩模硅片的硅片进行光刻处理; 将掩蔽的硅片浸入蚀刻剂中; 在蚀刻剂中旋转掩模的硅片; 将高纯度氮气注入蚀刻剂以搅拌蚀刻剂; 蚀刻完成后将掩模的硅片从蚀刻剂上除去; 并用去离子水冲洗掩蔽的硅片。

    Method for fabricating microstructure and microstructure
    142.
    发明授权
    Method for fabricating microstructure and microstructure 有权
    微结构和微结构的制作方法

    公开(公告)号：US07833430B2

    公开(公告)日：2010-11-16

    申请号：US11256959

    申请日：2005-10-25

    Applicant: Xiaoyu Mi ,  Norinao Kouma ,  Osamu Tsuboi ,  Masafumi Iwaki ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki

    Inventor： Xiaoyu Mi ,  Norinao Kouma ,  Osamu Tsuboi ,  Masafumi Iwaki ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki

    IPC: B44C1/22

    CPC classification number: B81C1/00547 ,  B81B2201/042 ,  B81B2203/0136 ,  B81C2201/0132 ,  B81C2201/0133 ,  G01P15/0802 ,  G02B26/0841

    Abstract: A method of making a microstructure with thin wall portions (T1-T3) includes a step of performing a first etching process to a material substrate having a laminate structure including a first conductive layer (11) and a second conductive layer (12) having a thickness of the thin wall portions (T1-T3), where the etching is performed from the side of the first conductive layer (11) thereby forming in the second conductive layer (12) pre thin wall portions (T1′-T3′) which has a pair of side surfaces apart from each other in an in-plane direction of the second conductive layer (12) and contact the first conductive layer (11). The method also includes a step of performing a second etching process from the side of the first conductive layer (11) for removing part of the first conductive layer (11) contacting the pre thin wall portions (T1′-T3′) to form the thin wall portions.

    Abstract translation: 一种制造具有薄壁部分（T1-T3）的微结构的方法包括对具有包括第一导电层（11）和第二导电层（12）的层压结构的材料基板进行第一蚀刻工艺的步骤，所述第一导电层（11）和第二导电层（12） 从第一导电层（11）侧进行蚀刻从而在第二导电层（12）中形成预薄壁部分（T1'-T3'）的薄壁部分（T1-T3）的厚度， 具有在第二导电层（12）的面内方向上彼此分开的一对侧表面，并与第一导电层（11）接触。 该方法还包括从第一导电层（11）侧进行第二蚀刻处理以去除与预薄壁部分（T1'-T3'）接触的第一导电层（11）的一部分的步骤，以形成 薄壁部分。

    Laser Patterning of Glass Bodies
    144.
    发明申请
    Laser Patterning of Glass Bodies 有权
    玻璃体的激光图案

    公开(公告)号：US20100050692A1

    公开(公告)日：2010-03-04

    申请号：US12480933

    申请日：2009-06-09

    Applicant: Stephan Lvovich Logunov ,  Joseph Francis Schroeder, III

    Inventor： Stephan Lvovich Logunov ,  Joseph Francis Schroeder, III

    IPC: C03C15/00

    CPC classification number: C03C23/0025 ,  B81C1/00539 ,  B81C2201/0133 ,  B81C2201/0143 ,  C03C15/00

    Abstract: A method for laser patterning of a glass body, the method comprising the steps of: (i) providing a laser, said laser having an output beam at a laser wavelength λ; (ii) providing a glass body having optical density at of at least 1.5/cm at said wavelength; (iii) directing said laser output beam to (a) impinge on the glass body without ablating said glass, and (b) heat the glass body at a location proximate to said laser output beam so as to form a swell at this location; and (iv) etching this location.

    Abstract translation: 一种用于玻璃体的激光图案化的方法，所述方法包括以下步骤：（i）提供激光，所述激光器具有激光波长λ的输出光束; （ii）提供在所述波长处具有至少1.5 / cm的光密度的玻璃体; （iii）将所述激光输出光束引向（a）撞击在玻璃体上，而不会烧蚀所述玻璃，和（b）在靠近所述激光输出光束的位置加热玻璃体，以在该位置形成隆起; 和（iv）蚀刻这个位置。

    Wet etch processing
    145.
    发明授权
    Wet etch processing 失效
    湿式蚀刻处理

    公开(公告)号：US07651946B2

    公开(公告)日：2010-01-26

    申请号：US11637020

    申请日：2006-12-12

    Applicant: Nicolle Wilke ,  Anthony Morrissey

    Inventor： Nicolle Wilke ,  Anthony Morrissey

    IPC: H01L21/311

    CPC classification number: A61M37/0015 ,  A61M2037/003 ,  A61M2037/0046 ,  A61M2037/0053 ,  B81B2201/055 ,  B81C1/00626 ,  B81C99/0065 ,  B81C2201/0133 ,  B81C2201/0138

    Abstract: A method of wet etching produces high-precision microneedle arrays for use in medical applications. The method achieves precise process control over microneedle fabrication, at single wafer or batch-level, using wet etching of silicon with potassium hydroxide (KOH) solution by accurately identifying the etch time endpoint. Hence, microneedles of an exactly required height, shape, sharpness and surface quality are achieved. The outcome is a reliable, reproducible, robust and relatively inexpensive microneedle fabrication process. Microneedles formed by KOH wet etching have extremely smooth surfaces and exhibit superior mechanical and structural robustness to their dry etched counterparts. These properties afford extra reliability to such silicon microneedles, making them ideal for medical applications. The needles can also be hollowed. Wet etched silicon microneedles can then be employed as masters to replicate the improved surface and structural properties in other materials (such as polymers) by moulding.

    Abstract translation: 湿蚀刻的方法产生用于医疗应用的高精度微针阵列。 该方法通过精确地识别蚀刻时间终点，通过使用氢氧化钾（KOH）溶液对硅进行湿蚀刻，在单晶片或批次水平上实现了微针制造的精确过程控制。 因此，实现了精确要求的高度，形状，锐度和表面质量的微针。 结果是可靠，可重现，稳健且相对便宜的微针制作工艺。 通过KOH湿蚀刻形成的微针具有非常光滑的表面，并且对其干蚀刻的对应物表现出优异的机械和结构坚固性。 这些性能为这种硅微针提供了额外的可靠性，使其成为医疗应用的理想选择。 针也可以是中空的。 湿法蚀刻的硅微针可用作主机，通过模制复制其他材料（如聚合物）中改进的表面和结构性能。

    METHOD OF FABRICATING MICRO-VERTICAL STRUCTURE
    146.
    发明申请
    METHOD OF FABRICATING MICRO-VERTICAL STRUCTURE 失效
    微观结构的制作方法

    公开(公告)号：US20100009514A1

    公开(公告)日：2010-01-14

    申请号：US12417114

    申请日：2009-04-02

    Applicant: Myung Lae LEE ,  Jong Hyun Lee ,  Sung Sik Yun ,  Dae Hun Jeong ,  Gunn Hwang ,  Chang Auck Choi ,  Chang Han Je ,  Jae Yong An

    Inventor： Myung Lae LEE ,  Jong Hyun Lee ,  Sung Sik Yun ,  Dae Hun Jeong ,  Gunn Hwang ,  Chang Auck Choi ,  Chang Han Je ,  Jae Yong An

    IPC: H01L21/306

    CPC classification number: B81C1/00619 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/0133

    Abstract: A method of fabricating a micro-vertical structure is provided. The method includes bonding a second crystalline silicon (Si) substrate onto a first crystalline Si substrate by interposing an insulating layer pattern and a cavity, etching the second crystalline Si substrate using a deep reactive ion etch (DRIE) process along a [111] crystal plane vertical to the second crystalline Si substrate, and etching an etched vertical surface of the second crystalline Si substrate using a crystalline wet etching process to improve the surface roughness and flatness of the etched vertical surface. As a result, no morphological defects occur on the etched vertical surface. Also, footings do not occur at an etch end-point due to the insulating layer pattern. In addition, the micro-vertical structure does not float in the air but is fixed to the first crystalline Si substrate, thereby facilitating subsequent processes.

    Abstract translation: 提供一种制造微垂直结构的方法。 该方法包括通过插入绝缘层图案和空腔将第二晶体硅（Si）衬底接合到第一晶体Si衬底上，使用沿[111]晶体的深反应离子蚀刻（DRIE）工艺蚀刻第二晶体Si衬底 垂直于第二晶体Si衬底，并且使用结晶湿蚀刻工艺蚀刻第二晶体Si衬底的蚀刻垂直表面，以改善蚀刻垂直表面的表面粗糙度和平坦度。 结果，蚀刻的垂直表面上没有形成形态缺陷。 此外，由于绝缘层图案，在蚀刻终点处不发生基脚。 此外，微垂直结构不会浮在空气中，而是固定在第一晶体Si衬底上，从而有助于后续工艺。

    METHOD OF FABRICATING REFLECTIVE MIRROR BY WET-ETCH USING IMPROVED MASK PATTERN AND REFLECTIVE MIRROR FABRICATED USING THE SAME
    147.
    发明申请
    METHOD OF FABRICATING REFLECTIVE MIRROR BY WET-ETCH USING IMPROVED MASK PATTERN AND REFLECTIVE MIRROR FABRICATED USING THE SAME 失效
    使用改进的掩模图案和使用其制造的反射镜制造反射镜的方法

    公开(公告)号：US20090223924A1

    公开(公告)日：2009-09-10

    申请号：US11605961

    申请日：2006-11-30

    Applicant: Nobuaki Asai ,  Emi Morioka

    Inventor： Nobuaki Asai ,  Emi Morioka

    IPC: B29D11/00

    CPC classification number: G02B26/101 ,  B81B2201/042 ,  B81B2203/0109 ,  B81C1/00142 ,  B81C2201/0133 ,  G02B26/0858

    Abstract: A method is provided of fabricating a reflective mirror having a reflective surface on which light is incident. This method includes: coating at least one of opposite faces of a plate-shaped etchable material made of a single crystal material, with a film-like etching mask; forming a mask pattern on at least one of opposite faces of the etching mask, the mask pattern having a planar shape to which a circle is more similar than a quadrangle; and wet-etching the etchable material. This method allows the reflective mirror to be fabricated so as to have a silhouette of a planar shape to which a circle is more similar than a quadrangle, when viewed in a direction normal to the reflective surface.

    Abstract translation: 提供了一种制造具有光入射的反射表面的反射镜的方法。 该方法包括：用膜状蚀刻掩模涂覆由单晶材料制成的板状可蚀刻材料的至少一个相对面; 在所述蚀刻掩模的至少一个相对表面上形成掩模图案，所述掩模图案具有与四边形更相似的平面形状; 并湿蚀刻可蚀刻材料。 该方法允许反射镜被制造成当从垂直于反射表面的方向观察时，具有与四边形更相似的平面形状的轮廓。

    Method for creating narrow trenches in dielectric materials
    148.
    发明授权
    Method for creating narrow trenches in dielectric materials 有权
    在介电材料中形成窄沟槽的方法

    公开(公告)号：US07560357B2

    公开(公告)日：2009-07-14

    申请号：US11532190

    申请日：2006-09-15

    Applicant: Gerald Beyer

    Inventor： Gerald Beyer

    IPC: H01L21/8238 ,  H01L21/336 ,  H01L21/76 ,  H01L29/76 ,  H01L29/00

    CPC classification number: H01L21/31111 ,  B81C1/00595 ,  B81C2201/0132 ,  B81C2201/0133 ,  H01L21/31633 ,  H01L21/76224 ,  H01L21/76816

    Abstract: A method for producing narrow trenches in semiconductor devices. The narrow trenches are formed by chemically changing the properties of a first dielectric layer locally, such that the side walls of a patterned hole in the first dielectric layer is converted locally and becomes etchable by a first etching substance. Subsequently a second dielectric material is deposited in the patterned structure and the damaged part of the first dielectric material is removed such that small trenches are obtained.

    Abstract translation: 一种在半导体器件中制造窄沟槽的方法。 通过局部化学地改变第一电介质层的性质来形成窄沟槽，使得第一介电层中的图案化孔的侧壁被局部地转换并且可被第一蚀刻物质蚀刻。 随后，在图案化结构中沉积第二介电材料，并且去除第一介电材料的损坏部分，从而获得小的沟槽。

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