Abstract:
The invention provides a method for automatically aligning a beam of charged particles with an aperture. Thereby, the beam is defelcted to two edges of the aperture. From the signals required to obtain an extinction, a correction deflection field is calculated. Furter, a method for automatically aligning a beam of charged particles with an optical axis is provided. Thereby a defocusing is introduced and a signal calculated based on an introduced image shift is applied to a deflection unit. Further, a method for correction of the astigmatism is provided. Thereby the sharpness is evaluated for a sequence of frames measured whilst varying the signals to a stigmator.
Abstract:
In order to provide a full-automatic scanning electron microscope which carries out investigation jobs full-automatically from fine adjustment to reviewing, the scanning electron microscope of the present invention has a function of calculating the accuracy of correction after correction of coordinates and displaying it with vectors 39, a function of automatically determining a searching magnification for automatic object detection from the obtained information after correction of coordinates, and a function of calculating the frequency of occurrence of objects or defects and a time required for measurement from the searching magnification and conditions of measurement.
Abstract:
A method of detecting defects in a patterned substrate includes positioning a charged-particle-beam optical column relative to a patterned substrate, the charged-particle-beam optical column having a field of view (FOV) with a substantially uniform resolution over the FOV; operating the charged-particle-beam optical column to acquire images of a region of the patterned substrate lying within the FOV by scanning the charged-particle beam over the patterned substrate; and comparing the acquired images to a reference to identify defects in the patterned substrate.
Abstract:
In the type of scanning transmission electron microscopes carrying an aberration corrector, a method of assuring more simplified and manipulatable adjustment of the corrector and a scanning transmission electron microscope having that function are provided. A Ronchigram image is acquired using a spherical standard specimen and parameters necessary for the adjustment are acquired from the thus obtained Ronchigram.
Abstract:
A method and apparatus for measuring a critical dimension (CD) are provided. Image data of a measurement pattern are generated. The measurement pattern may include a first surface and a second surface facing each other. The image data may include a first side and a second side corresponding to the first surface and the second surface of the measurement pattern, respectively. The image data may be edited to increase an overlap length of the first and second sides. A measurement window crossing the first and second sides in the edited image data is set. A distance between the first and second sides in the measurement window is measured.
Abstract:
A charged particle beam apparatus is provided which can prevent the accuracy of positional shift detection from being degraded owing to differences in picture quality, so that even when the state of a charged particle beam is changed at the time that optical conditions are changed or the optical axis changes with time, an auto adjustment of the optical axis can be realized easily and highly accurately. In the charged particle beam apparatus, evaluation or adjustment of focusing is conducted before the deflection condition of an alignment deflector for optical axis adjustment is changed or a table of focus adjustment amounts in correspondence with deflection conditions of the alignment deflector is provided, whereby when the deflection condition of the alignment deflector is changed, a focus adjustment is carried out in accordance with the table.
Abstract:
The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
Abstract:
There is disclosed a charged particle beam device which judges whether or not an image based on a dark-field signal has an appropriate atomic number contrast. Input reference information, a bright-field image or a back-scattered electron image is compared with a dark-field image, and it is judged whether or not a correlation value between them or the dark-field image has a predetermined contrast. According to such a constitution, it is possible to obtain information by which it is judged whether or not the dark-field image has an appropriate atomic number contrast.
Abstract:
A charged particle application circuit pattern inspection apparatus and method are disclosed, in which the reduction in the rejection rate attributable to an out-of-focus state due to the change in the charge condition on the sample surface is prevented and the false information is reduced to improve the apparatus reliability. The image acquisition position on a sample is stored in an image acquisition position storage unit, a focus correction value is stored in a focus correction value storage unit in accordance with the image acquisition position and the sample charge condition, the inspection conditions and the sample to be inspected are input from an input unit, the sample charge condition is evaluated in accordance with the image position acquisition position, and the focal point is corrected by a focus correction unit.
Abstract:
To provide an electron beam system capable of performing three-dimensional measurement of a sample with high precision irrespective of the tilt angle and height of the sample. The electron beam system has a correction factor storing section 32 for storing a correction factor at a reference tilt angle with respect to a plane which is used to tilt a sample by a sample tilting section 5, an approximate coordinate measuring section 28 for obtaining an approximate shape or approximate coordinate values of the sample based on an output corresponding to a stereo image from an electron beam detecting section 4, an image correcting section 30 for correcting the stereo image according to the tilt angle created by the sample tilting section 5 based on the shape or coordinate values of the sample obtained in the approximate coordinate measuring section 28 using a correction factor stored in the correction factor storing section 32, and a precise coordinate measuring section 34 for obtaining a shape or coordinate values of the sample which are more precise than those obtained in the approximate coordinate measuring section 28 based on a corrected stereo image obtained in the image correcting section 30.