METHODS OF EMBEDDING THIN-FILM CAPACITORS INTO SEMICONDUCTOR PACKAGES USING TEMPORARY CARRIER LAYERS
    141.
    发明申请
    METHODS OF EMBEDDING THIN-FILM CAPACITORS INTO SEMICONDUCTOR PACKAGES USING TEMPORARY CARRIER LAYERS 有权
    使用临时载波层将薄膜电容器嵌入半导体封装的方法

    公开(公告)号:US20100270644A1

    公开(公告)日:2010-10-28

    申请号:US12763412

    申请日:2010-04-20

    Abstract: Disclosed are methods of making a semiconductor package comprising at least one thin-film capacitor embedded into at least one build-up layer of said semiconductor package. A thin-film capacitor is provided wherein the thin-film capacitor has a first electrode and a second electrode separated by a dielectric. A temporary carrier layer is applied to the first electrode and the second electrode is patterned. A PWB core and a build-up material are provided, and the build-up material is placed between the PWB core and the patterned second electrode of said thin-film capacitor. The patterned electrode side of the thin-film capacitor is laminated to the PWB core by way of the build-up material, the temporary carrier layer is removed, and the first electrode is patterned.

    Abstract translation: 公开了制造半导体封装的方法,该半导体封装包括嵌入到所述半导体封装的至少一个堆积层中的至少一个薄膜电容器。 提供了一种薄膜电容器,其中薄膜电容器具有由电介质隔开的第一电极和第二电极。 临时载体层被施加到第一电极并且第二电极被图案化。 提供PWB芯和堆积材料,并且积聚材料被放置在PWB芯和所述薄膜电容器的图案化的第二电极之间。 薄膜电容器的图案化电极侧通过积聚材料层叠到PWB芯上,去除临时载体层,并对第一电极进行图案化。

    Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof
    143.
    发明授权
    Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof 有权
    金属箔上的掺杂了钛酸钡的薄膜电容器的接受体及其制造方法

    公开(公告)号:US07795663B2

    公开(公告)日:2010-09-14

    申请号:US11157894

    申请日:2005-06-21

    Abstract: The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing additives selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium; and wherein said thin film composition is doped with 0.002-0.05 atom percent of a dopant comprising an element selected from Sc, Cr, Fe, Co, Ni, Ca, Zn, Al, Ga, Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Yb, Lu and mixtures thereof and to capacitors comprising such compositions.

    Abstract translation: 本发明涉及一种电介质薄膜组合物,其包括:(1)一种或多种选自(a)钛酸钡的钡/钛的添加剂,(b)在烧制期间可形成钛酸钡的任何组合物,和(c) 其混合物; 溶于(2)有机介质; 并且其中所述薄膜组合物掺杂0.002-0.05原子%的包含选自Sc,Cr,Fe,Co,Ni,Ca,Zn,Al,Ga,Y,Nd,Sm,Eu,Gd中的元素的掺杂剂, Dy,Ho,Er,Yb,Lu及其混合物,以及包含这种组合物的电容器。

    ELECTRONIC COMPONENT AND ELECTRONIC COMPONENT MODULE
    150.
    发明申请
    ELECTRONIC COMPONENT AND ELECTRONIC COMPONENT MODULE 有权
    电子元件和电子元件模块

    公开(公告)号:US20090242257A1

    公开(公告)日:2009-10-01

    申请号:US12410699

    申请日:2009-03-25

    Abstract: In a dielectric element, the side faces are roughened so that the surface roughness Ra is 15 nm or greater. By this means, the area of contact between a glass epoxy resin substrate and insulating material is increased, adhesion with resin substrates is improved, and strength and reliability can be enhanced when buried between two resin substrates. In the dielectric element, the surface roughness Ra of side surfaces is 5000 nm or less, so that when burying the dielectric element between a glass epoxy resin substrate and insulating material, the occurrence of air bubbles between the surface of the dielectric element and the resin can be prevented.

    Abstract translation: 在电介质元件中,侧面粗糙化,使得表面粗糙度Ra为15nm以上。 通过这种方式,玻璃环氧树脂基板和绝缘材料之间的接触面积增加,与树脂基板的粘合性提高,并且当埋在两个树脂基板之间时可以提高强度和可靠性。 在电介质元件中,侧面的表面粗糙度Ra为5000nm以下,因此当在玻璃环氧树脂基板和绝缘材料之间埋入电介质元件时,介电元件表面与树脂之间产生气泡 可以防止。

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