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    Interconnect structure using through wafer vias and method of fabrication
    161.
    发明申请
    Interconnect structure using through wafer vias and method of fabrication 有权
    通过晶片通孔和制造方法的互连结构

    公开(公告)号：US20080079120A1

    公开(公告)日：2008-04-03

    申请号：US11541774

    申请日：2006-10-03

    Applicant: John S. Foster ,  Steven H. Hovey ,  Paul J. Rubel ,  Kimon Rybnicek

    Inventor： John S. Foster ,  Steven H. Hovey ,  Paul J. Rubel ,  Kimon Rybnicek

    IPC: H01L29/06 ,  H01L21/30

    CPC classification number: B81B7/007 ,  B81B2201/014 ,  B81B2207/092

    Abstract: A device and a method are described which hermetically seals at least one microstructure within a cavity. Electrical access to the at least one microstructure is provided by through wafer vias formed through a via substrate which supports the at least one microstructure on its front side. The via substrate and a lid wafer may form a hermetic cavity which encloses the at least one microstructure. The through wafer vias are connected to bond pads located outside the cavity by an interconnect structure formed on the back side of the via substrate. Because they are outside the cavity, the bond pads may be placed inside the perimeter of the bond line forming the cavity, thereby greatly reducing the area occupied by the device. The through wafer vias also shorten the circuit length between the microstructure and the interconnect, thus improving heat transfer and signal loss in the device.

    Abstract translation: 描述了一种在空腔内气密地密封至少一个微结构的装置和方法。 通过通过在其前侧支撑至少一个微结构的通孔基板形成的通过晶片通孔提供对至少一个微结构的电接入。 通孔基板和盖子晶片可以形成封闭至少一个微结构的密封腔。 贯通晶片通孔通过形成在通孔基板的背面上的互连结构连接到位于空腔外部的接合焊盘。 因为它们在空腔外部，所以接合焊盘可以放置在形成空腔的接合线的周边内部，从而大大减小了器件所占据的面积。 贯通晶片通孔也缩短了微结构与互连之间的电路长度，从而改善了器件中的传热和信号损失。

    MEMS switch and method of fabricating the same
    162.
    发明申请
    MEMS switch and method of fabricating the same 审中-公开
    MEMS开关及其制造方法

    公开(公告)号：US20080001691A1

    公开(公告)日：2008-01-03

    申请号：US11585235

    申请日：2006-10-24

    Applicant: Young-tack Hong ,  Jong-seok Kim ,  In-sang Song ,  Sang-wook Kwon ,  Sang-hun Lee ,  Che-heung Kim

    Inventor： Young-tack Hong ,  Jong-seok Kim ,  In-sang Song ,  Sang-wook Kwon ,  Sang-hun Lee ,  Che-heung Kim

    IPC: H01F7/08

    CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B2201/014 ,  B81B2201/016

    Abstract: A MEMS switch includes a substrate, at least one signal line and at least one electrode formed on the substrate, and a moving beam disposed in a spaced-apart relation with respect to the substrate above the substrate so as to be connected with or disconnected from the signal line according to an operation of the electrode. The moving beam includes at least one body, and at least one support to support the body. The body has a modulus of elasticity larger than that of the support. The MEMS switch prevents the moving beam from being stuck and increases a contact force generating between the moving beam and the signal line, thereby enabling a signal to be stably transmitted.

    Abstract translation: MEMS开关包括衬底，至少一个信号线和形成在衬底上的至少一个电极以及相对于衬底在衬底上间隔开的关系设置的移动束，以便与衬底连接或断开 根据电极的操作的信号线。 移动梁包括至少一个主体和至少一个支撑体以支撑身体。 身体的弹性模量大于支撑体的弹性模量。 MEMS开关防止移动光束被卡住，并增加在移动光束和信号线之间产生的接触力，从而使信号能够稳定地传输。

    Microelectromechanical device having an active opening switch
    163.
    发明授权
    Microelectromechanical device having an active opening switch 失效
    具有主动开启开关的微机电装置

    公开(公告)号：US07053736B2

    公开(公告)日：2006-05-30

    申请号：US10260598

    申请日：2002-09-30

    Applicant: Richard D. Nelson

    Inventor： Richard D. Nelson

    IPC: H01H51/22

    CPC classification number: B81B3/0054 ,  B81B2201/014 ,  H01H59/0009

    Abstract: A microelectromechanical device is provided which includes a beam configured to apply an opening force on a closed switch. The opening force may be substantially independent of a force stored in the closed switch. A combination of the force applied by the beam and the force stored in the closed switch may be sufficient to open the switch after removal of a force associated with actuation of the switch. Another microelectromechanical device includes a switch beam spaced above a closing gate and a contact structure. The device may also include an additional beam configured to apply a force on the switch beam in a direction away from the contact structure. A method for opening a switch includes reducing an attractive force between a switch beam and a closing gate. The method also includes externally applying a mechanical force on the switch beam in a direction away from the closing gate.

    Abstract translation: 提供了一种微机电装置，其包括被构造成在闭合的开关上施加开启力的梁。 打开力可以基本上独立于存储在闭合开关中的力。 由梁施加的力与存储在闭合开关中的力的组合可能足以在移除与开关的致动相关联的力之后打开开关。 另一微电子机械装置包括在闭合闸门上方间隔开的开关梁和接触结构。 该装置还可以包括被配置成沿远离接触结构的方向在开关梁上施加力的附加梁。 用于打开开关的方法包括减小开关束和关闭门之间的吸引力。 该方法还包括在离开关闭门的方向上向开关梁外部施加机械力。

    RF MEMS switch and fabrication method thereof
    164.
    发明申请
    RF MEMS switch and fabrication method thereof 失效
    RF MEMS开关及其制造方法

    公开(公告)号：US20050156694A1

    公开(公告)日：2005-07-21

    申请号：US11036039

    申请日：2005-01-18

    Applicant: Jae-Yeong Park ,  Hee-Chul Lee

    Inventor： Jae-Yeong Park ,  Hee-Chul Lee

    IPC: B81B7/02 ,  H01P1/12 ,  H01P1/10

    CPC classification number: B81B7/007 ,  B81B2201/014 ,  B81C2203/0118 ,  H01G5/16 ,  H01G5/40 ,  H01H1/0036 ,  H01H2057/006 ,  H01P1/127 ,  Y10T29/42 ,  Y10T29/49105 ,  Y10T29/49117

    Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. The RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate is formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

    Abstract translation: 公开了一种RF MEMS开关及其制造方法。 通过使用当将电场施加到压电电容器时通过从电能转换为机械能而致动的压电电容器，RF MEMS开关通过低电压和低功耗来致动。 通过使用蚀刻方法，化学机械抛光法，电镀法等形成盖基板，并且RF MEMS开关具有高可靠性和高产量。

    Tapered-width micro-cantilevers and micro-bridges
    168.
    发明授权
    Tapered-width micro-cantilevers and micro-bridges 失效
    锥形微悬臂梁和微型桥梁

    公开(公告)号：US06876283B1

    公开(公告)日：2005-04-05

    申请号：US10618055

    申请日：2003-07-11

    Applicant: Robert J. Weber ,  Chieh-Hsiao Wang

    Inventor： Robert J. Weber ,  Chieh-Hsiao Wang

    IPC: H01H59/00 ,  H01H51/22

    CPC classification number: B81B3/0086 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/019 ,  H01H59/0009

    Abstract: The invention provides tapered-width micro-cantilevers and micro-bridges that give additional design parameters for controlling and synthesizing pull-in (i.e., actuation) voltages. The pull-in voltage of a tapered-width micro-cantilever is generally a function of the taper function of the width along the length, the initial width, and the length of the micro-cantilever. By controlling these design parameters, a specific pull-in voltage for a micro-cantilever is obtained. The formula for a pull-in voltage is determined based on the geometry of the micro-cantilever device and a plurality of derived pull-in voltages. The pull-in voltage is derived by iteratively solving a displacement vector as a function of applied voltage across the micro-cantilever device and setting the pull-in voltage to the voltage at which the solution does not converge. The formula is derived for linear-tapered width, parabolic-tapered width and exponential-tapered width micro-cantilevers.

    Abstract translation: 本发明提供了锥形宽度微悬臂梁和微型桥梁，其提供用于控制和合成拉入（即致动）电压的附加设计参数。 锥形宽度微悬臂的拉入电压通常是沿着长度，初始宽度和微悬臂长度的宽度的锥度函数的函数。 通过控制这些设计参数，可获得微悬臂梁的特定拉入电压。 基于微悬臂装置的几何形状和多个导出的拉入电压来确定拉入电压的公式。 通过迭代地求解位移矢量作为跨越微悬臂装置上的施加电压的函数并将拉入电压设置为解不融合的电压来导出拉入电压。 该公式是针对线性锥形宽度，抛物线锥形宽度和指数锥形宽度微悬臂梁而导出的。

    Micromachine switch and its production method
    169.
    发明授权
    Micromachine switch and its production method 失效
    微机械开关及其制作方法

    公开(公告)号：US06875936B1

    公开(公告)日：2005-04-05

    申请号：US09869107

    申请日：1999-12-20

    Applicant: Kenichiro Suzuki ,  Tsunehisa Marumoto

    Inventor： Kenichiro Suzuki ,  Tsunehisa Marumoto

    IPC: H01H11/00 ,  B81B3/00 ,  B81C1/00 ,  B81C3/00 ,  H01H1/20 ,  H01H11/06 ,  H01H59/00 ,  H01H57/00

    CPC classification number: H01H59/0009 ,  B81B2201/014 ,  B81B2201/016 ,  B81C1/0015 ,  B81C2201/0133 ,  H01H1/20

    Abstract: A micro-machine switch in accordance with the present invention includes a supporter having a predetermined height relative to a surface of a substrate, a flexible cantilever projecting from the supporter in parallel with a surface of the substrate, and having a distal end facing a gap formed between two signal lines, a contact electrode formed on the cantilever, facing the gap, a lower electrode formed on the substrate in facing relation with a part of the cantilever, and an intermediate electrode formed on the cantilever in facing relation with the lower electrode. The micro-machine switch can operate at a lower drive voltage than a voltage at which a conventional micro-machine switch operates, and can enhance a resistance of an insulating film against a voltage.

    Abstract translation: 根据本发明的微型机器开关包括：相对于基板的表面具有预定高度的支撑件，从支撑件平行于基板的表面突出的柔性悬臂，并且具有面向间隙的远端 形成在两个信号线之间，形成在悬臂上的接触电极，面向间隙，形成在基板上的与电极的一部分相对的底电极，以及形成在悬臂上的中间电极，与下电极 。 微机开关可以在比常规微机开关操作的电压低的驱动电压下工作，并且可以增强绝缘膜对电压的电阻。

    Integrated electromechanical switch and tunable capacitor and method of making the same
    170.
    发明授权
    Integrated electromechanical switch and tunable capacitor and method of making the same 有权
    集成机电开关和可调谐电容器及其制造方法

    公开(公告)号：US06800912B2

    公开(公告)日：2004-10-05

    申请号：US10147300

    申请日：2002-05-17

    Applicant: Mehmet Ozgur

    Inventor： Mehmet Ozgur

    IPC: H01L2984

    CPC classification number: H01H1/0036 ,  B81B2201/014 ,  B81B2201/031 ,  B81C1/00246 ,  B81C2203/0735 ,  H01H61/00 ,  H01H2061/006

    Abstract: A monolithically integrated, electromechanical microwave switch, capable of handling signals from DC to millimeter-wave frequencies, and an integrated electromechanical tunable capacitor are described. Both electromechanical devices include movable beams actuated either by thermo-mechanical or by electrostatic forces. The devices are fabricated directly on finished silicon-based integrated circuit wafers, such as CMOS, BiCMOS or bipolar wafers. The movable beams are formed by selectively removing the supporting silicon underneath the thin films available in a silicon-based integrated circuit technology, which incorporates at least one polysilicon layer and two metallization layers. A cavity and a thick, low-loss metallization are used to form an electrode above the movable beam. A thick mechanical support layer is formed on regions where the cavity is located, or substrate is bulk-micro-machined, i.e., etched.

    Abstract translation: 描述了能够处理从DC到毫米波频率的信号的单片集成的机电微波开关，以及集成的机电可调电容器。 两个机电装置都包括通过热机械或静电力而致动的可移动梁。 这些器件直接在成品硅基集成电路晶片上制造，例如CMOS，BiCMOS或双极晶片。 可移动光束通过选择性地去除在基于硅的集成电路技术中可获得的薄膜下面的支撑硅而形成，该技术包括至少一个多晶硅层和两个金属化层。 使用空腔和厚的低损耗金属化在可动梁的上方形成电极。 在空腔所在的区域上形成厚的机械支撑层，或者衬底被体微加工，即蚀刻。

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