公开(公告)号：US20110034031A1

公开(公告)日：2011-02-10

申请号：US12805569

申请日：2010-08-05

Applicant: Katsuhiko Kanamori ,  Masashi Totokawa ,  Hiroshi Tanaka

Inventor： Katsuhiko Kanamori ,  Masashi Totokawa ,  Hiroshi Tanaka

IPC: H01L21/302

CPC classification number: B81C1/005 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81C1/00484 ,  B81C2201/0143 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/32137

Abstract: A manufacturing method of a semiconductor device includes: irradiating a laser beam on a single crystal silicon substrate, and scanning the laser beam on the substrate so that a portion of the substrate is poly crystallized, wherein at least a part of a poly crystallized portion of the substrate is exposed on a surface of the substrate; and etching the poly crystallized portion of the substrate with an etchant. In this case, a process time is improved.

Abstract translation: 半导体器件的制造方法包括：将激光束照射在单晶硅衬底上，并且将衬底上的激光束扫描以使得衬底的一部分多晶化，其中至少部分多晶结晶部分 将衬底暴露在衬底的表面上; 并用蚀刻剂蚀刻基片的多晶化部分。 在这种情况下，处理时间得到改善。

公开(公告)号：US20100187667A1

公开(公告)日：2010-07-29

申请号：US12361439

申请日：2009-01-28

Applicant: Paul A. Hoisington ,  Marc A. Torrey

Inventor： Paul A. Hoisington ,  Marc A. Torrey

IPC: H01L23/02 ,  H01L21/00

CPC classification number: B81C1/00904 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0143 ,  B81C2201/019

Abstract: A MEMS device is described that has a body with a component bonded to the body. The body has a main surface and a side surface adjacent to the main surface and smaller than the main surface. The body is formed of a material and the side surface is formed of the material and the body is in a crystalline structure different from the side surface. The body includes an outlet in the side surface and the component includes an aperture in fluid connection with the outlet.

Abstract translation: 描述了具有结合到身体的部件的主体的MEMS装置。 主体具有与主表面相邻并且小于主表面的主表面和侧表面。 主体由材料形成，侧表面由材料形成，并且主体是与侧面不同的晶体结构。 主体包括侧表面中的出口，并且部件包括与出口流体连接的孔。

公开(公告)号：US20090184088A1

公开(公告)日：2009-07-23

申请号：US12017944

申请日：2008-01-22

Applicant: Robert J. Carlson

Inventor： Robert J. Carlson

IPC: B29C33/56 ,  B29C41/00

CPC classification number: B29C33/3842 ,  B29C41/00 ,  B29C59/14 ,  B29C59/16 ,  B29K2909/00 ,  B29K2995/0037 ,  B81B7/00 ,  B81B2201/05 ,  B81B2201/058 ,  B81B2203/0127 ,  B81C99/009 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/034 ,  C23F1/02 ,  H01L21/30604 ,  Y10T428/24496

Abstract: The invention is directed to a patterned aerogel-based layer that serves as a mold for at least part of a microelectromechanical feature. The density of an aerogel is less than that of typical materials used in MEMS fabrication, such as poly-silicon, silicon oxide, single-crystal silicon, metals, metal alloys, and the like. Therefore, one may form structural features in an aerogel-based layer at rates significantly higher than the rates at which structural features can be formed in denser materials. The invention further includes a method of patterning an aerogel-based layer to produce such an aerogel-based mold. The invention further includes a method of fabricating a microelectromechanical feature using an aerogel-based mold. This method includes depositing a dense material layer directly onto the outline of at least part of a microelectromechanical feature that has been formed in the aerogel-based layer.

Abstract translation: 本发明涉及用作至少部分微机电特征的模具的图案化气凝胶基层。 气凝胶的密度小于MEMS制造中使用的典型材料的密度，例如多晶硅，氧化硅，单晶硅，金属，金属合金等。 因此，可以以明显高于在较致密的材料中形成结构特征的速率的速率在气凝胶层中形成结构特征。 本发明还包括一种图案化气凝胶层以产生这种基于气凝胶的模具的方法。 本发明还包括使用基于气凝胶的模具制造微机电特征的方法。 该方法包括将致密材料层直接沉积在已经形成在气凝胶层中的微机电特征的至少一部分的轮廓上。

公开(公告)号：US07557044B2

公开(公告)日：2009-07-07

申请号：US11263476

申请日：2005-10-31

Applicant: Yong Ju Yun ,  Chil Seong Ah ,  Dong Han Ha ,  Hyung Ju Park ,  Wan Soo Yun ,  Kwang Cheol Lee ,  Gwang Seo Park

Inventor： Yong Ju Yun ,  Chil Seong Ah ,  Dong Han Ha ,  Hyung Ju Park ,  Wan Soo Yun ,  Kwang Cheol Lee ,  Gwang Seo Park

IPC: H01L21/302

CPC classification number: B81C99/0095 ,  B81B2201/035 ,  B81C2201/0143 ,  Y10S977/883 ,  Y10S977/888

Abstract: Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components. The present invention makes it possible to fabricate the high-quality nano-components in a more simple and easier manner at a lower cost, as compared to other conventional methods. Further, the present invention provides a method of implementing nanomachines through combination of such nano-components and biomolecules, etc.

Abstract translation: 本文公开了使用纳米板制造纳米组分的方法，包括以下步骤：使用光刻和电子束光刻在衬底上印刷栅格; 将分散有纳米板的水溶液喷射到栅格部分上以将纳米板定位在基底上; 在衬底和位于衬底上的纳米板上沉积预定厚度的保护膜; 通过使用聚焦离子束（FIB）或电子束光刻法离子蚀刻沉积有保护膜的纳米板; 并且在纳米板的离子蚀刻之后使用保护膜去除剂去除残留在基板上的保护膜，以及通过使用纳米探针传输这种纳米成分并与其他纳米成分组装来制造纳米机械或纳米结构的方法。 与其他常规方法相比，本发明可以以更简单和更容易的方式以更低的成本制造高质量的纳米组分。 此外，本发明提供了通过这些纳米组分和生物分子等的组合来实现纳米机器的方法。

公开(公告)号：US20080314871A1

公开(公告)日：2008-12-25

申请号：US11766680

申请日：2007-06-21

Applicant: Milos Toth ,  Noel Smith

Inventor： Milos Toth ,  Noel Smith

IPC: H01L21/3065

CPC classification number: B05C21/005 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01J2237/31749

Abstract: A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

Abstract translation: 一种用于制造微结构的方法，其中使用诸如光束引发的前体分解的光束过程，以精确图案沉积掩模，然后选择性等离子体束，包括以下步骤：首先产生保护掩模 使用诸如电子束，聚焦离子束（FIB）或激光工艺的光束过程在衬底的表面部分上，并且其次使用选择性等离子体束蚀刻工艺来蚀刻未掩模的衬底部分。 可选地，包括去除保护掩模的第三步骤可以用第二种，实质上相对地选择的等离子体束工艺进行。

公开(公告)号：US20080105663A1

公开(公告)日：2008-05-08

申请号：US11927764

申请日：2007-10-30

Applicant: Alan Hunt ,  Ernest Hasselbrink ,  Edgar Meyhofer ,  Kevin Ke

Inventor： Alan Hunt ,  Ernest Hasselbrink ,  Edgar Meyhofer ,  Kevin Ke

IPC: B23K26/36 ,  B23K26/14

CPC classification number: B23K26/06 ,  B23K26/0624 ,  B23K26/0665 ,  B23K26/073 ,  B23K26/1224 ,  B23K26/142 ,  B23K26/146 ,  B23K26/36 ,  B23K26/361 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2101/40 ,  B23K2103/30 ,  B23K2103/50 ,  B81C1/00492 ,  B81C2201/0143 ,  B82Y30/00 ,  B82Y40/00 ,  C03C23/0025 ,  Y10T428/24273 ,  Y10T428/24562 ,  Y10T428/24744

Abstract: The invention provides a versatile technique for machining of nanometer-scale features using tightly-focused ultrashort laser pulses. By the invention, the size of features can be reduced far below the wavelength of light, thus enabling nanomachining of a wide range of materials. The features may be extremely small, of nanometer size, and are highly reproducible.

Abstract translation: 本发明提供了一种用于使用紧密聚焦的超短激光脉冲来加工纳米尺度特征的通用技术。 通过本发明，特征的尺寸可以降低到远低于光的波长，从而使得能够对宽范围的材料进行纳米加工。 特征可能非常小，纳米尺寸，并且具有高度可重复性。

公开(公告)号：US20060276040A1

公开(公告)日：2006-12-07

申请号：US11504466

申请日：2006-08-15

Applicant: Margaret Abraham

Inventor： Margaret Abraham

IPC: H01L21/302 ,  H01L21/00 ,  H01L21/31 ,  H01L21/425

CPC classification number: H01L21/31116 ,  B81C1/00484 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01L21/26533

Abstract: A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrate and subsequent annealing to form a stoichiometric film with the device geometry is defined by the implant energy and dose and so is not limited by the usual process parameters.

公开(公告)号：US20060096691A1

公开(公告)日：2006-05-11

申请号：US10520656

申请日：2003-07-11

Applicant: Alessandra Bossi ,  Anthony Francis ,  Olena Imiriyna ,  Sergey Piletsky

Inventor： Alessandra Bossi ,  Anthony Francis ,  Olena Imiriyna ,  Sergey Piletsky

IPC: B01L3/00

CPC classification number: B01L3/502707 ,  B01L2200/147 ,  B01L2300/0816 ,  B01L2300/165 ,  B01L2300/18 ,  B01L2400/0415 ,  B01L2400/0472 ,  B01L2400/0487 ,  B01L2400/0677 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C1/00119 ,  B81C2201/0143 ,  Y10T436/2575

Abstract: The present invention provides a microfluidic device comprising a body structure which comprises a fusible material. Selective application of energy (e.g. scanning radiation) produces and maintains a network of microchannels by fusing the material. There may be pons in fluid communication with one or more channels. The subject devices find use in a variety of electrophoretic applications, including clinical assays, high throughput screening for genomics, proteomics and pharmaceutical applications, point-of-care in vitro diagnostics, molecular genetic analysis and nucleic acid diagnostics, cell separations, and bioresearch generally.

Abstract translation: 本发明提供了一种微流体装置，其包括包含可熔材料的主体结构。 能量的选择性应用（例如扫描辐射）通过熔化材料产生并维持微通道网络。 可能存在与一个或多个通道流体连通的通风口。 主题装置可用于各种电泳应用，包括临床测定，基因组学，蛋白质组学和药物应用的高通量筛选，体外诊断点，分子遗传分析和核酸诊断，细胞分离和生物研究 。

公开(公告)号：US20060017016A1

公开(公告)日：2006-01-26

申请号：US11167617

申请日：2005-06-27

Applicant: Hendrik Tappel

Inventor： Hendrik Tappel

IPC: H01J37/08

CPC classification number: H01J37/3056 ,  B81C1/00126 ,  B81C2201/0143 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: The invention provides a method for the removal of a microscopic sample 1 from a substrate 2, comprising: performing a cutting process whereby the substrate 2 is irradiated with a beam 4 such that the sample 1 is cut out of the substrate 2, and performing an adhesion process whereby the sample 1 is adhered to a probe 3, characterized in that the cutting process, during at least part of the duration of the cutting process, is carried out by at least two beams 4, 5 simultaneously. By performing cutting with at least two beams, the sample 1 can be extracted without having to change the orientation of the substrate 2 with respect to the means that produce the beams. Both the act of working with two beams simultaneously and the attendant possibility of keeping the orientation constant provide time-savings compared to a method whereby cutting is only performed with a single beam.

Abstract translation: 本发明提供了从基板2去除微观样品1的方法，包括：进行切割处理，由此基板2被光束4照射，使得样品1从基板2切出，并执行 附着过程，其中样品1粘附到探针3，其特征在于，在切割过程的至少部分持续时间期间，切割过程由至少两个光束4,5同时进行。 通过利用至少两个光束进行切割，可以提取样品1而不必相对于产生光束的装置改变基底2的取向。 与仅使用单个光束执行切割的方法相比，同时使用两个光束的动作和保持定向常数的伴随可能性节省了时间。

公开(公告)号：US06932933B2

公开(公告)日：2005-08-23

申请号：US09821918

申请日：2001-03-30

Applicant: Henry Helvajian ,  Peter D. Fuqua ,  William W. Hansen

Inventor： Henry Helvajian ,  Peter D. Fuqua ,  William W. Hansen

IPC: B44C1/22 ,  B81C1/00 ,  C03C23/00 ,  C03C15/00

CPC classification number: B81C1/00492 ,  B44C1/227 ,  B44C1/228 ,  B81C2201/0133 ,  B81C2201/0143 ,  C03C23/0025

Abstract: A laser direct write method creates true three dimensional structures within photocerams using an focused pulsed ultraviolet laser with a wavelength in a weakly absorbing region of the photoceram material. A critical dose of focused laser UV light selectively exposes embedded volumes of the material for subsequent selective etching. The photoceram material exposure is nonlinear with the laser fluence and the critical dose depends on the square of the per shot fluence and the number of pulses. The laser light is focused to a focal depth for selective volumetric exposure of the material within a focal volume within the remaining collateral volumes that is critically dosed for selecting etching and batch fabrication of highly defined embedded structures.

Abstract translation: 激光直接写入方法使用在光致抗蚀剂材料的弱吸收区域中具有波长的聚焦脉冲紫外激光器在光泽内产生真正的三维结构。 聚焦激光UV光的关键剂量选择性地暴露了材料的嵌入体积，用于随后的选择性蚀刻。 光泽材料暴露是非线性的，具有激光注量，临界剂量取决于每个射流注量的平方和脉冲数。 激光被聚焦到焦点深度，用于在残留的临时体积内的焦点体积内材料的选择性体积暴露，其被批量选择用于选择高度限定的嵌入结构的蚀刻和批量制造。