Abstract:
Forming an electronic structure may include forming a seed layer on a substrate, and forming a mask on the seed layer. The mask may include an aperture therein exposing a portion of the seed layer, and a barrier layer may be formed on the exposed portion of the seed layer. A bump may be formed on the barrier layer, and the mask may be removed. In addition, portions of the seed layer may be selectively removed using the barrier layer as an etch mask.
Abstract:
There is provided an electroconductive paste composition that can form a coating film having satisfactory thickness by single coating work. The electroconductive paste composition can form bumps having satisfactory height even by a smaller number of times of coating than that in the prior art technique. The electroconductive paste composition comprises a phenolic resin, a melamine resin, an electroconductive powder, a solvent, and a bump forming aid comprising a monohydric alcohol having a terminal methoxy group and having at least one ether bond. The electroconductive paste composition can be used in a printed wiring board.
Abstract:
A land grid array (LGA) interposer structure, including an electrically insulating carrier plane, and at least one interposer mounted on a first surface of said carrier plane. The interposer possesses a hemi-toroidal configuration in transverse cross-section and is constituted of a dielectric elastomeric material. A plurality of electrically-conductive elements are arranged about the surface of the at least one hemi-toroidal interposer and extend radically inwardly and downwardly from an uppermost end thereof into electrical contact with at least one component located on an opposite side of the electrically insulating carrier plane. Provided is also a method of producing the land grid array interposer structure.
Abstract:
A land grid array (LGA) interposer structure, including an electrically insulating carrier plane, and at least one interposer mounted on a first surface of said carrier plane. The interposer possesses a hemi-toroidal configuration in transverse cross-section and is constituted of a dielectric elastomeric material. A plurality of electrically-conductive elements are arranged about the surface of the at least one hemi-toroidal interposer and extend radically inwardly and downwardly from an uppermost end thereof into electrical contact with at least one component located on an opposite side of the electrically insulating carrier plane. Provided is also a method of producing the land grid array interposer structure.
Abstract:
A ceramic electronic component achieves a sufficient drop resistance strength even when terminal electrodes are formed with a higher density. The ceramic electronic component includes a ceramic laminate including ceramic laminates which are laminated to each other, first terminal electrodes disposed in a peripheral portion of a bottom surface of the ceramic laminate, catch pad electrodes arranged in the ceramic laminate so as to face the respective first terminal electrodes, and sets each including at least two first via hole conductors, which electrically connect the first terminal electrodes and the respective catch pad electrodes.
Abstract:
A method for mounting a semiconductor part on a circuit substrate is provided, which includes preparing the semiconductor part having a surface thereof provided with a plurality of stud-bumps, preparing a solder substrate having a surface thereof on which solid-solders corresponding to respective ones of the plurality of stud-bumps are arranged, preparing the circuit substrate having a surface thereof provided with connecting pads corresponding to respective ones of the plurality of stud-bumps, attaching the corresponding solid-solders on the solder substrate to respective tip ends of the plurality of stud bumps, separating the solid-solders attached to the tip ends of the stud-bumps from the solder substrate, contacting the solid-solder attached to respective ones of the tip ends of the stud-bumps with the corresponding connecting pads, and heating the solid-solders contacted with the corresponding connecting pads thereby establishing solder connection between respective ones of the stud-bumps and the corresponding connecting pads.
Abstract:
A protruding electrodes is formed on a lead electrode of an electronic component, and the protruding electrodes comprises a first conductor formed on the lead electrode of the electronic component, and a second conductor overlaid on the first conductor by using a transfer mold having a concavity. By virtue of this structure, protruding electrodes of any configuration can be formed in fine pitches.
Abstract:
A chip package includes a chip, a carrier, and at least a bump connecting structure for connecting the chip to the carrier. The bump connecting structure includes a first metal bump disposed on a chip pad of the chip and has a first height relative to a passivation layer of the chip, a second metal bump disposed on a carrier pad of the carrier and has a second height relative to a solder mask layer of the carrier, and a middle metal part disposed between the first and the second metal bumps. The sum of the minimum distance between the first and the second metal bumps, the first height of the first metal bump, and the second height of the second metal bump is less than 60 micrometers. The melting point of the middle metal part is lower than that of the first and the second metal bumps.
Abstract:
A circuit board includes a substrate, an insulating layer, at least one protrusion, and a first circuit layer. The insulating layer is disposed on the substrate and has at least one protrusion-positioning region. At least a part of the protrusion is disposed on the protrusion-positioning region. The first circuit layer is disposed on the insulating layer and has at least one trace line extending onto the protrusion.
Abstract:
The contact node comprises at least two metallized contacts coupled with conductive paths arranged on surfaces of connection layers made on the base of a dielectric material and mutually aligned and interconnected electrically and mechanically by conductive binding material. The contact node is a joint between a contact made in the form of a metallized pad coupled with a conductive path on the surface of the underlying connection layer and a respective contact made in the form of a metallized hole in a dielectric material layer.