Abstract:
A monolithically integrated, electromechanical microwave switch, capable of handling signals from DC to millimeter-wave frequencies, and an integrated electromechanical tunable capacitor are described. Both electromechanical devices include movable beams actuated either by thermo-mechanical or by electrostatic forces. The devices are fabricated directly on finished silicon-based integrated circuit wafers, such as CMOS, BiCMOS or bipolar wafers. The movable beams are formed by selectively removing the supporting silicon underneath the thin films available in a silicon-based integrated circuit technology, which incorporates at least one polysilicon layer and two metallization layers. A cavity and a thick, low-loss metallization are used to form an electrode above the movable beam. A thick mechanical support layer is formed on regions where the cavity is located, or substrate is bulk-micro-machined, i.e., etched.
Abstract:
MEMS Device having Electrothermal Actuation and Release and Method for Fabricating. According to one embodiment, a microscale switch is provided and can include a substrate and a stationary electrode and stationary contact formed on the substrate. The switch can further include a movable microcomponent suspended above the substrate. The microcomponent can include a structural layer including at least one end fixed with respect to the substrate. The microcomponent can further include a movable electrode spaced from the stationary electrode and a movable contact spaced from the stationary electrode. The microcomponent can include an electrothermal component attached to the structural layer and operable to produce heating for generating force for moving the structural layer.
Abstract:
A microelectromechanical system switch may include a relatively stiff cantilevered beam coupled, on its free end, to a more compliant or flexible extension. A contact may be positioned at the free end of the cantilevered beam. The extension reduces the actuation voltage that is needed and compensates for the relative stiffness of the cantilevered beam in closing the switch. In opening the switch, the stiffness of the cantilevered beam may advantageously enable quicker operation which may be desirable in higher frequency situations.
Abstract:
A method of fabricating and the structure of a micro-electromechanical switch (MEMS) device provided with self-aligned spacers or bumps is described. The spacers are designed to have an optimum size and to be positioned such that they act as a detent mechanism for the switch to minimize problems caused by stiction. The spacers are fabricated using standard semiconductor techniques typically used for the manufacture of CMOS devices. The present method of fabricating these spacers requires no added depositions, no extra lithography steps, and no additional etching.
Abstract:
A microelectro-mechanical device which includes a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode. The device includes first and second electrically conductive regions which are isolated from one another by the fixed electrode. The moveable electrode moves to cover the fixed electrode and to electrically couple to the second conductive region, thus electrically coupling the first and second conductive regions, in response to a potential being applied across the fixed and moveable electrodes. The fixed electrode is transparent to electromagnetic signals or waves and the moveable electrode impedes or allows transmission of electromagnetic signals or waves.
Abstract:
A microelectromechanical system (MEMS) switch having a high-resonance-frequency beam is disclosed. The MEMS switch includes first and second spaced apart electrical contacts, and an actuating electrode. The beam is adapted to establish contact between the electrodes via electrostatic deflection of the beam as induced by the actuating electrode. The beam may have a cantilever or bridge structure, and may be hollow or otherwise shaped to have a high resonant frequency. Methods of forming the high-speed MEMS switch are also disclosed.
Abstract:
An integrated circuit and method are provided for sensing activity such as acceleration in a predetermined direction of movement. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connected to and positioned adjacent the switch detecting circuit region. The sensor switching region preferably includes a plurality of floating contacts positioned adjacent and lengthwise extending outwardly from said switch detecting circuit region for defining a plurality of released beams so that each of said plurality of released beams displaces in a predetermined direction responsive to acceleration. The plurality of released beams preferably includes at least two released beams lengthwise extending outwardly from the switch detecting circuit region to different predetermined lengths and at least two released beams lengthwise extending outwardly from the switch detecting circuit region to substantially the same predetermined lengths. The methods of forming an integrated sensor advantageously are preferably compatible with know integrated circuit manufacturing processes, such as for CMOS circuit manufacturing, with only slight variations therefrom.
Abstract:
A method for manufacturing a micro normally-closed structure. The method includes steps of providing a flexible arm, and a stationary base and a fixed contact separated from the flexible arm, wherein the flexible arm is free to move and includes a first end configured at one terminal and a movable contact configured at another terminal, the transient base is configured at where corresponds to the first end, and the fixed contact is configured at where corresponds to the movable contact; forming a temporary electrical connection between the first end and the stationary base; forming a temporary electrical conduction between the movable contact and the fixed contact; maintaining the temporary electrical connection and the temporary electrical conduction; and securing the first end to the stationary base permanently which causes the temporary electrical connection turn into a permanent electrical connection and the temporary electrical conduction turn into the micro normally-closed structure.
Abstract:
A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
Abstract:
A semiconductor device can include a first metal trace, a first via disposed on the first metal trace, a second metal trace disposed on the first via, and an insulator interposed between the first metal trace and the first via. The insulator can be configured to lower an energy barrier or redistribute structure defects or charge carriers, such that the first metal trace and the first via are electrically connected to each other when power is applied. The semiconductor device can further include a dummy via disposed on the first metal trace.