公开(公告)号：US20140291787A1

公开(公告)日：2014-10-02

申请号：US14307512

申请日：2014-06-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bang-Chiang Lan ,  Ming-I Wang ,  Li-Hsun Ho ,  Hui-Min Wu ,  Min Chen ,  Chien-Hsin Huang

IPC: B81B3/00 ,  H04R3/00 ,  H04R7/00

CPC classification number: B81B3/0021 ,  B81B2201/0271 ,  H04R3/00 ,  H04R7/00 ,  H04R19/005 ,  H04R31/00 ,  H04R2499/11 ,  Y10T29/49002

Abstract: A structure of micro-electro-mechanical systems (MEMS) electroacoustic transducer is disclosed. The MEMS electroacoustic transducer includes a substrate having a MEMS device region, a diaphragm having openings and disposed in the MEMS device region, a silicon material layer disposed on the diaphragm and sealing the diaphragm, and a conductive pattern disposed beneath the diaphragm in the MEMS device region. Preferably, a first cavity is also formed between the diaphragm and the substrate.

Abstract translation: 公开了一种微电子机械系统（MEMS）电声换能器的结构。 MEMS电声换能器包括具有MEMS器件区域的基板，具有开口且设置在MEMS器件区域中的隔膜，设置在隔膜上并密封隔膜的硅材料层，以及设置在MEMS器件的隔膜下方的导电图案 地区。 优选地，在隔膜和基板之间也形成第一空腔。

公开(公告)号：US20140241129A1

公开(公告)日：2014-08-28

申请号：US14276930

申请日：2014-05-13

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshio Tomiyoshi ,  Kazutoshi Torashima ,  Takahiro Akiyama

IPC: H04R1/00

CPC classification number: H04R1/00 ,  B06B1/0292 ,  B81B2201/0271 ,  B81B2203/04 ,  B81C1/00626 ,  H04R2201/003

Abstract: An electromechanical transducer includes a substrate, a first electrode disposed on the substrate, and a vibration film including a membrane disposed on the first electrode with a space therebetween and a second electrode disposed on the membrane so as to oppose the first electrode. The first electrode has a surface roughness value of 6 nm RMS or less.

Abstract translation: 机电换能器包括基板，设置在基板上的第一电极以及设置在第一电极上的具有间隔的膜的振动膜和设置在膜上以与第一电极相对的第二电极。 第一电极的表面粗糙度值为6nm RMS以下。

公开(公告)号：US08765615B1

公开(公告)日：2014-07-01

申请号：US12816292

申请日：2010-06-15

Applicant: David T. Chang ,  Frederic P. Stratton ,  Hung Nguyen ,  Randall L. Kubena

Inventor： David T. Chang ,  Frederic P. Stratton ,  Hung Nguyen ,  Randall L. Kubena

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L21/31111 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C2201/0194 ,  B81C2203/036 ,  B81C2203/038 ,  H01L21/31056 ,  H03H3/0072 ,  H03H2009/02291

Abstract: A quart resonator for use in lower frequency applications (typically lower than the higher end of the UHF spectrum) where relatively thick quartz members, having a thickness greater than ten microns, are called for. A method for fabricating same resonator includes providing a first quart substrate; thinning the first quartz substrate to a desired thickness; forming a metallic etch stop on a portion of a first major surface of the first quartz substrate; adhesively attaching the first major surface of the first quartz substrate with the metallic etch stop formed thereon to a second quartz substrate using a temporary adhesive; etching a via though the first quartz substrate to the etch stop; forming a metal electrode on a second major surface of the first quartz substrate, the metal electrode penetrating the via in the first quartz substrate to make ohmic contact with the metallic etch stop; bonding the metal electrode formed on the second major surface of the first quartz substrate to a pad formed on a substrate bearing oscillator drive circuitry to form a bond there between; and dissolving the temporary adhesive to thereby release the second quartz substrate from the substrate bearing oscillator drive circuitry and a portion of the first quartz substrate bonded thereto via the bond formed between the metal electrode formed on the second major surface of the first quartz substrate to and the pad formed on the substrate bearing oscillator drive circuitry.

Abstract translation: 用于低频应用（通常低于UHF频谱的较高端）的夸特谐振器，其中厚度大于10微米的相对较厚的石英构件被要求。 一种制造相同谐振器的方法包括提供第一夸脱基片; 将第一石英基板变薄至所需厚度; 在所述第一石英衬底的第一主表面的一部分上形成金属蚀刻停止件; 使用临时粘合剂将第一石英基板的第一主表面与其上形成的金属蚀刻停止粘合到第二石英基板上; 将通过第一石英衬底的通孔蚀刻到蚀刻停止部; 在所述第一石英衬底的第二主表面上形成金属电极，所述金属电极穿过所述第一石英衬底中的通孔以与所述金属蚀刻停止件欧姆接触; 将形成在第一石英衬底的第二主表面上的金属电极接合到形成在承载振荡器驱动电路的衬底上的焊盘，以在其之间形成结合; 并且将临时粘合剂溶解，从而从基板轴承振荡器驱动电路和第一石英基板的一部分经由形成在第一石英基板的第二主表面上的金属电极之间的键与第一石英基板接合的部分而释放第二石英基板 衬垫形成在承载振荡器驱动电路的衬底上。

公开(公告)号：US08697545B2

公开(公告)日：2014-04-15

申请号：US12810883

申请日：2008-12-29

Applicant: Frederic Nabki ,  Mourad El-Gamal ,  Tomas A. Dusatko

Inventor： Frederic Nabki ,  Mourad El-Gamal ,  Tomas A. Dusatko

IPC: H01L21/30

CPC classification number: H03H9/2452 ,  B81B3/0078 ,  B81B7/0087 ,  B81B2201/0271 ,  B81B2207/015 ,  H03H3/0072 ,  H03H9/02401 ,  H03H9/02409 ,  H03H9/2426 ,  H03H9/2463

Abstract: A method for manufacturing microelectromechanical structures (MEMS) is disclosed. A low temperature MEMS device is designed. The low temperature MEM device is based upon a semiconductor manufacturing process comprising at least one semiconductor process for providing at least a heater therein. Each semiconductor process used in implementing the design is limited to a maximum temperature of the in-process low temperature MEMs device or a substrate onto which the low temperature MEMS device is being manufactured to below 300° C.

Abstract translation: 公开了一种用于制造微机电结构（MEMS）的方法。 设计了低温MEMS器件。 低温MEM器件基于半导体制造工艺，其包括用于在其中至少提供加热器的至少一个半导体工艺。 用于实现设计的每个半导体工艺被限制在工艺中的低温MEMs器件或低温MEMS器件制造的衬底在300℃以下的最高温度。

公开(公告)号：US08658452B2

公开(公告)日：2014-02-25

申请号：US13003328

申请日：2009-07-08

Applicant: Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

Inventor： Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

IPC: H01L21/00 ,  H01L27/14

CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

公开(公告)号：US20140035433A1

公开(公告)日：2014-02-06

申请号：US13953092

申请日：2013-07-29

Applicant: Seiko Epson Corporation

Inventor： Yusuke Matsuzawa

IPC: H02N1/00 ,  B81C1/00 ,  B81B7/00

CPC classification number: H02N1/006 ,  B81B3/0086 ,  B81B7/0006 ,  B81B7/0032 ,  B81B2201/0271 ,  B81B2203/04 ,  B81C1/00 ,  Y10T29/49117

Abstract: A MEMS device is a MEMS device having a MEMS vibrator which includes a plurality of MEMS constituent elements laminated and formed above a first foundation portion which is laminated above a main surface of a wafer substrate, and the MEMS constituent elements are laminated above a first oxide film and a nitride film so as to cover an opening which is formed in the nitride film and exposes a second foundation portion above which the nitride film is laminated.

Abstract translation: MEMS器件是具有MEMS振动器的MEMS器件，MEMS振子包括层叠并形成在层叠在晶片衬底的主表面上的第一基底部分之上的多个MEMS构成元件，并且MEMS构成元件层叠在第一氧化物 膜和氮化物膜，以覆盖形成在氮化物膜中的开口，并暴露第二基底部分，在该第二基底部分上层叠氮化物膜。

公开(公告)号：US08638179B2

公开(公告)日：2014-01-28

申请号：US13330965

申请日：2011-12-20

Applicant: Alexei Gaidarzhy ,  Pritiraj Mohanty

Inventor： Alexei Gaidarzhy ,  Pritiraj Mohanty

IPC: H03B5/30 ,  H03H9/24 ,  B81B5/00

CPC classification number: H03H9/02259 ,  B81B3/0086 ,  B81B2201/0271 ,  H03H9/02275 ,  H03H9/02338 ,  H03H9/02417 ,  H03H9/2405 ,  H03H9/2431 ,  H03H9/2463 ,  H03H2009/02354 ,  H03H2009/02464 ,  H03H2009/02496

Abstract: Micromechanical resonating devices, as well as related methods, are described herein. The resonating devices can include a micromechanical resonating structure, an actuation structure that actuates the resonating structure, and a detection structure that detects motion of the resonating structure. A bias structure separated from the mechanical resonating structure is provided to tune a resonance frequency of the mechanical resonating structure.

Abstract translation: 本文描述了微机械谐振装置以及相关方法。 谐振装置可以包括微机械谐振结构，致动谐振结构的致动结构以及检测谐振结构的运动的检测结构。 提供与机械谐振结构分离的偏置结构来调谐机械谐振结构的谐振频率。

公开(公告)号：US20140021561A1

公开(公告)日：2014-01-23

申请号：US13838132

申请日：2013-03-15

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Alexander A. Trusov ,  Doruk Senkal ,  Andrei M. Shkel

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0018 ,  B81B2201/0271 ,  B81C1/00134 ,  B81C1/00634 ,  G01C19/5691

Abstract: A high temperature micro-glassblowing process and a novel inverted-wineglass architecture that provides self-aligned stem structures. The fabrication process involves the etching of a fused quartz substrate wafer. A TSG or fused quartz device layer is then bonded onto the fused quartz substrate, creating a trapped air pocket or cavity between the substrate and the TSG device layer. The substrate and TSG device layer 14 are then heated at an extremely high temperature of approximately 1700° C., forming an inverted wineglass structure. Finally, the glassblown structure is cut or etched from the substrate to create a three dimensional wineglass resonator micro-device. The inverted wineglass structure may be used as a high performance resonator for use as a key element in precision clock resonators, dynamic MEMS sensors, and MEMS inertial sensors.

Abstract translation: 高温微玻璃吹制工艺和提供自对准茎结构的新型倒酒杯结构。 制造工艺涉及对熔融石英衬底晶片的蚀刻。 然后将TSG或熔融石英器件层接合到熔融石英衬底上，在衬底和TSG器件层之间产生截留的气穴或腔。 然后将衬底和TSG器件层14在大约1700℃的极高温度下加热，形成倒置的酒杯结构。 最后，从衬底切割或蚀刻玻璃泡结构，以形成三维酒杯谐振器微器件。 反向酒杯结构可用作高性能谐振器，用作精密时钟谐振器，动态MEMS传感器和MEMS惯性传感器中的关键元件。

公开(公告)号：US08587390B2

公开(公告)日：2013-11-19

申请号：US13307336

申请日：2011-11-30

Applicant: Ryuji Kihara

Inventor： Ryuji Kihara

IPC: H03H9/24 ,  H01L21/00

CPC classification number: H03H9/2457 ,  B81B2201/0271 ,  B81B2203/019 ,  B81C1/0015 ,  H03H3/0076 ,  H03H2009/02291 ,  H03H2009/02511

Abstract: A MEMS resonator according to the invention includes: a substrate; a first electrode formed above the substrate; and a second electrode having a supporting portion which is formed above the substrate and a beam portion which is supported by the supporting portion and arranged above the first electrode, wherein the beam portion has, in plan view, a shape in which the width monotonically decreases in a direction from the supporting portion toward a tip of the beam portion in a region overlapping the first electrode.

Abstract translation: 根据本发明的MEMS谐振器包括：基板; 形成在所述衬底上的第一电极; 以及第二电极，其具有形成在所述基板上方的支撑部分和梁部分，所述梁部分由所述支撑部分支撑并且布置在所述第一电极之上，其中所述梁部分在平面图中具有所述宽度单调减小的形状 在与第一电极重叠的区域中从支撑部朝向梁部的尖端的方向。

公开(公告)号：US08513747B1

公开(公告)日：2013-08-20

申请号：US13711070

申请日：2012-12-11

Applicant: InvenSense, Inc.

Inventor： Kegang Huang ,  Martin Lim ,  Steven S. Nasiri

IPC: H01L29/84

CPC classification number: B81B3/0051 ,  B81B7/02 ,  B81B2201/025 ,  B81B2201/0271 ,  B81C1/00293 ,  H01L29/0657

Abstract: An integrated MEMS device comprises a wafer where the wafer contains two or more cavities of different depths. The MEMS device includes one movable structure within a first cavity of a first depth and a second movable structure within a second cavity of a second depth. The cavities are sealed to maintain different pressures for the different movable structures for optimal operation. MEMS stops can be formed in the same multiple cavity depth processing flow. The MEMS device can be integrated with a CMOS wafer.

Abstract translation: 集成MEMS器件包括晶片，其中晶片包含两个或更多个不同深度的空腔。 MEMS器件包括在第一深度的第一腔内的一个可移动结构和在第二深度的第二腔内的第二可移动结构。 空腔被密封以保持不同的可移动结构的不同压力以实现最佳操作。 可以在相同的多腔深度处理流程中形成MEMS止动件。 MEMS器件可以与CMOS晶片集成。