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    METHOD FOR MANUFACTURING A PROTECTIVE LAYER AGAINST HF ETCHING, SEMICONDUCTOR DEVICE PROVIDED WITH THE PROTECTIVE LAYER AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
    182.
    发明申请
    METHOD FOR MANUFACTURING A PROTECTIVE LAYER AGAINST HF ETCHING, SEMICONDUCTOR DEVICE PROVIDED WITH THE PROTECTIVE LAYER AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
    用于制造抗蚀层的保护层的方法，用保护层提供的半导体器件及制造半导体器件的方法

    公开(公告)号：US20140231937A1

    公开(公告)日：2014-08-21

    申请号：US14262437

    申请日：2014-04-25

    Applicant: STMicroelectronics S.r.l.

    Inventor： Stefano Losa ,  Raffaella Pezzuto ,  Roberto Campedelli ,  Matteo Perletti ,  Luigi Esposito ,  Mikel Azpeitia Urquia

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: H01L21/02178 ,  B81B7/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00595 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/053 ,  H01L21/0228

    Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

    Abstract translation: 一种用于制造用于保护中间结构层以防止用氢氟酸蚀刻的保护层的方法，所述中间结构层由可被氢氟酸蚀刻或损坏的材料制成，所述方法包括以下步骤：形成第一层 氧化铝，通过原子层沉积在中间结构层上; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层; 通过原子层沉积在第一中间保护层之上形成第二层氧化铝; 并在第二氧化铝层上进行热结晶处理，形成第二中间保护层，从而完成保护层的形成。 形成保护层的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。

    MULTI-LAYER SUBSTRATE STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
    184.
    发明申请
    MULTI-LAYER SUBSTRATE STRUCTURE AND MANUFACTURING METHOD FOR THE SAME 审中-公开
    多层基板结构及其制造方法

    公开(公告)号：US20130147021A1

    公开(公告)日：2013-06-13

    申请号：US13806787

    申请日：2011-06-21

    Applicant: Riikka Puurunen ,  Kimmo Henttinen ,  Hannu Kattelus ,  Tommi Suni

    Inventor： Riikka Puurunen ,  Kimmo Henttinen ,  Hannu Kattelus ,  Tommi Suni

    IPC: H01L21/02 ,  H01L29/02

    CPC classification number: H01L21/0228 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/0167 ,  B81C2201/053 ,  B81C2203/0118 ,  H01L29/02

    Abstract: A method for manufacturing a multi-layer substrate structure such as a CSOI wafer structure (cavity-SOI, silicon-on-insulator) comprising obtaining a first and second wafer, such as two silicon wafers, wherein at least one of the wafers may be optionally provided with a material layer such as an oxide layer (302, 404), forming a cavity on the bond side of the first wafer (306, 406), depositing, preferably by ALD (Atomic Layer Deposition), a material layer, such as thin alumina layer, on either wafer arranged so as to at least in places face the other wafer and cover at least portion of the cavity of the first wafer, such as bottom, wall and/or edge thereof, and enable stopping etching, such as dry etching, into the underlying material (308, 408), and bonding the wafers provided with at least the aforesaid ALD layer as an intermediate layer together to form the multi-layer semiconductor substrate structure (310, 312). A related multi-layer substrate structure is presented.

    Abstract translation: 一种用于制造诸如CSOI晶片结构（空腔SOI，绝缘体上硅）的多层衬底结构的方法，包括获得诸如两个硅晶片的第一和第二晶片，其中至少一个晶片可以是 可选地设置有诸如氧化物层（302,404）的材料层，在第一晶片（306,406）的接合侧上形成空腔，优选通过ALD（原子层沉积）沉积材料层，例如 作为薄氧化铝层，在任一晶片上布置成至少在面对另一晶片的位置并且覆盖第一晶片的空腔的至少一部分，例如底部，壁和/或边缘，并且能够停止蚀刻，例如 作为干蚀刻，进入下层材料（308,408），并且将设置有至少上述ALD层的晶片作为中间层结合在一起以形成多层半导体衬底结构（310,312）。 提出了相关的多层基板结构。

    Method of making a micro-electro-mechanical-systems (MEMS) device
    185.
    发明授权
    Method of making a micro-electro-mechanical-systems (MEMS) device 有权
    制造微电子机械系统（MEMS）装置的方法

    公开(公告)号：US08455286B2

    公开(公告)日：2013-06-04

    申请号：US12916395

    申请日：2010-10-29

    Applicant: Lisa H. Karlin ,  David W. Kierst ,  Lianjun Liu ,  Wei Liu ,  Ruben B. Montez ,  Robert F. Steimle

    Inventor： Lisa H. Karlin ,  David W. Kierst ,  Lianjun Liu ,  Wei Liu ,  Ruben B. Montez ,  Robert F. Steimle

    IPC: H01L21/00

    CPC classification number: B81C1/00801 ,  B81B2207/07 ,  B81C2201/053

    Abstract: A method of forming a MEMS device includes forming a sacrificial layer over a substrate. The method further includes forming a metal layer over the sacrificial layer and forming a protection layer overlying the metal layer. The method further includes etching the protection layer and the metal layer to form a structure having a remaining portion of the protection layer formed over a remaining portion of the metal layer. The method further includes etching the sacrificial layer to form a movable portion of the MEMS device, wherein the remaining portion of the protection layer protects the remaining portion of the metal layer during the etching of the sacrificial layer to form the movable portion of the MEMS device.

    Abstract translation: 形成MEMS器件的方法包括在衬底上形成牺牲层。 该方法还包括在牺牲层上形成金属层并形成覆盖在金属层上的保护层。 该方法还包括蚀刻保护层和金属层以形成在金属层的剩余部分上形成保护层的剩余部分的结构。 该方法还包括蚀刻牺牲层以形成MEMS器件的可移动部分，其中保护层的剩余部分在蚀刻牺牲层期间保护金属层的剩余部分以形成MEMS器件的可移动部分 。

    PROTECTIVE THIN FILMS FOR USE DURING FABRICATION OF SEMICONDUCTORS, MEMS, AND MICROSTRUCTURES
    187.
    发明申请
    PROTECTIVE THIN FILMS FOR USE DURING FABRICATION OF SEMICONDUCTORS, MEMS, AND MICROSTRUCTURES 有权
    在半导体，MEMS和微结构制造过程中使用的保护薄膜

    公开(公告)号：US20120045884A1

    公开(公告)日：2012-02-23

    申请号：US13286635

    申请日：2011-11-01

    Applicant: Jeffrey Chinn ,  Boris Kobrin ,  Romuald Nowak

    Inventor： Jeffrey Chinn ,  Boris Kobrin ,  Romuald Nowak

    IPC: H01L21/30 ,  H01L21/78

    CPC classification number: H01L21/02126 ,  B81C1/00896 ,  B81C2201/053 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02263 ,  H01L21/3121

    Abstract: A method of protecting a substrate during fabrication of semiconductor, MEMS devices. The method includes application of a protective thin film which typically has a thickness ranging from 3 angstroms to about 1,000 angstroms, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

    Abstract translation: 一种在制造半导体MEMS器件期间保护衬底的方法。 该方法包括施加通常具有3埃至约1,000埃厚度的保护薄膜，其中用于沉积保护薄膜的前体材料是基于有机的前体，其包括至少一个含氟官能团 碳骨架的末端和在碳骨架的相对端处的至少一个功能性结合基团，并且其中所述碳骨架的长度为4个碳至约12个碳原子。 在许多应用中，在制造器件期间，保护薄膜的至少一部分被去除。

    Constrained Oxidation of Suspended Micro- and Nano-Structures
    188.
    发明申请
    Constrained Oxidation of Suspended Micro- and Nano-Structures 有权
    悬浮微米和纳米结构的约束氧化

    公开(公告)号：US20110207335A1

    公开(公告)日：2011-08-25

    申请号：US12709981

    申请日：2010-02-22

    Applicant: Tymon Barwicz

    Inventor： Tymon Barwicz

    IPC: H01L21/316

    CPC classification number: H01L29/0665 ,  B81B2203/0109 ,  B81C1/00833 ,  B81C2201/0178 ,  B81C2201/053 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/775

    Abstract: Techniques for preventing bending/buckling of suspended micro/nanostructures during oxidation are provided. In one aspect, a method for oxidizing a structure is provided. The method includes providing the structure having at least one suspended element selected from the group consisting of: a microstructure, a nanostructure and a combination thereof; surrounding the at least one suspended element in a cladding material; and oxidizing the at least one suspended element through the cladding material, wherein the cladding material physically constrains and thereby prevents distortion of the at least one suspended element during the oxidation.

    Abstract translation: 提供了用于在氧化期间防止悬浮的微/纳米结构的弯曲/屈曲的技术。 一方面，提供一种氧化结构的方法。 该方法包括提供具有至少一个悬浮元素的结构，所述悬浮元素选自：微结构，纳米结构及其组合; 围绕包层材料中的至少一个悬挂元件; 以及通过所述包层材料氧化所述至少一个悬浮元件，其中所述包层材料物理地约束并由此防止所述至少一个悬浮元件在氧化期间的变形。

    Method of etching sacrificial layer, method of manufacturing MEMS device, MEMS device and MEMS sensor
    190.
    发明申请
    Method of etching sacrificial layer, method of manufacturing MEMS device, MEMS device and MEMS sensor 审中-公开
    蚀刻牺牲层的方法，制造MEMS器件的方法，MEMS器件和MEMS传感器

    公开(公告)号：US20100065930A1

    公开(公告)日：2010-03-18

    申请号：US12585552

    申请日：2009-09-17

    Applicant: Goro Nakatani

    Inventor： Goro Nakatani

    IPC: H01L29/84 ,  H01L21/306 ,  H01L29/06

    CPC classification number: B81C1/00801 ,  B81B2201/0257 ,  B81C1/00476 ,  B81C2201/053 ,  H01L28/40 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

    Abstract: The method of etching a sacrificial layer according to the present invention includes the steps of forming a sacrificial layer having a protrusive shape on a base layer, forming a covering film covering the sacrificial layer, forming a protective film made of a material whose etching selection ratio to the sacrificial layer is greater than the etching selection ratio of the covering film to the sacrificial layer on a portion of the covering film opposed to the side surface of the sacrificial layer, and etching the sacrificial layer after the formation of the protective film.

    Abstract translation: 根据本发明的蚀刻牺牲层的方法包括以下步骤：在基底层上形成具有突出形状的牺牲层，形成覆盖牺牲层的覆盖膜，形成由蚀刻选择比 与牺牲层的侧面相对的覆盖膜的一部分上的覆盖膜与牺牲层的蚀刻选择比大于牺牲层的蚀刻选择比，并且在形成保护膜之后蚀刻牺牲层。

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