公开(公告)号：US06358793B1

公开(公告)日：2002-03-19

申请号：US09258471

申请日：1999-02-26

Applicant: Donald L. Yates ,  Garry A. Mercaldi

Inventor： Donald L. Yates ,  Garry A. Mercaldi

IPC: H01L218242

CPC classification number: H01L28/92 ,  G03F7/0035 ,  G03F7/201 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/32139 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/91

Abstract: Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for protection of the inside of the holes during non-mechanical removal of exposed surface layers. The localized masking is accomplished through differential exposure of a resist layer to electromagnetic or thermal energy. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

Abstract translation: 用于集成电路的容器结构及其制造方法，而不使用机械平面化（例如化学机械平面化（CMP）），从而消除了CMP引起的缺陷和变化。 该方法利用在非机械去除暴露的表面层期间的孔的局部掩蔽来保护孔的内部。 通过将抗蚀剂层与电磁或热能的差分曝光来实现局部掩蔽。 容器结构适用于并入这种存储单元的存储器单元和装置以及其它集成电路。

公开(公告)号：US20020024086A1

公开(公告)日：2002-02-28

申请号：US09912151

申请日：2001-07-24

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates ,  Garry A. Mercaldi

IPC: H01L027/108 ,  H01L021/8242 ,  H01L021/20

CPC classification number: H01L28/92 ,  G03F7/0035 ,  G03F7/201 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/32139 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/91

Abstract: Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for protection of the inside of the holes during non-mechanical removal of exposed surface layers. The localized masking is accomplished through differential exposure of a resist layer to electromagnetic or thermal energy. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

Abstract translation: 用于集成电路的容器结构及其制造方法，而不使用机械平面化（例如化学机械平面化（CMP）），从而消除了CMP引起的缺陷和变化。 该方法利用在非机械去除暴露的表面层期间的孔的局部掩蔽来保护孔的内部。 通过将抗蚀剂层与电磁或热能的差分曝光来实现局部掩蔽。 容器结构适用于并入这种存储单元的存储器单元和装置以及其它集成电路。

公开(公告)号：US20010055733A1

公开(公告)日：2001-12-27

申请号：US09827946

申请日：2001-04-09

Applicant: Nikon Corporation

Inventor： Nobuyuki Irie ,  Nobutaka Magome

IPC: G03F009/00 ,  G03F007/20

CPC classification number: G03F7/70066 ,  G03F7/201 ,  G03F7/70191 ,  G03F7/70358

Abstract: An exposure method which irradiates a slit-shaped illumination light IL on a reticle Ri and a substrate while moving them synchronously so as to sequentially transfer images of patterns formed on the reticle Ri to the substrate 4, wherein a density filter Fj having an attenuating part for gradually reducing the distribution of illuminance of the illumination light IL is moved in synchronization with the movement of the reticle Ri.

Abstract translation: 一种曝光方法，其在分划板Ri和基板上同步地照射狭缝状照明光IL，以顺序地将形成在标线片Ri上的图案的图像转印到基板4上，其中，具有衰减部分 为了逐渐减小照明光的照度分布，IL与标线片Ri的移动同步地移动。

公开(公告)号：US20010012696A1

公开(公告)日：2001-08-09

申请号：US09773909

申请日：2001-02-02

Applicant: GAKKOHOJIN RITSUMEIKAN

Inventor： Jun Minakuti ,  Osamu Tabata ,  Koji Yamamoto

IPC: H01L021/302 ,  H01L021/461 ,  H01L021/26 ,  H01L021/324 ,  H01L021/42

CPC classification number: G03F7/70558 ,  G03F7/201 ,  G03F7/2039 ,  G03F7/70358 ,  G03F7/70366 ,  G03F7/70416 ,  G03F7/70425

Abstract: For allowing processing of a material into an intended three-dimensional configuration having different processed depths while suppressing an influence exerted on a processed configuration by a configuration of a transparent portion, a processing device includes an SR light source 1 for emitting SR light, an X-ray mask having a transparent portion of a predetermined configuration for passing the X-rays emitted from the SR light source 1, and exposure stage 3 for oscillating the X-ray mask and the material relatively to each other in accordance with a movement pattern determined based on the processing configuration of the processing material for moving the X-ray mask and the material relatively to each other and thereby oscillating the region where the material is irradiated with the X-ray passed through the transparent opening.

Abstract translation: 为了允许通过透明部分的配置来抑制材料处理成具有不同处理深度的预期三维构造，同时抑制通过透明部分的配置对加工构造的影响，处理装置包括用于发射SR光的SR光源1，X射线 具有用于使从SR光源1发射的X射线通过的预定构造的透明部分的曝光掩模和用于相对于彼此相对地振动X射线掩模和材料的曝光级3 基于用于相对于彼此移动X射线掩模和材料的处理材料的处理配置，从而使穿过透明开口的X射线照射材料的区域振荡。

公开(公告)号：US5824455A

公开(公告)日：1998-10-20

申请号：US428518

申请日：1995-04-25

Applicant: Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

Inventor： Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

IPC: C23C16/04 ,  G03F1/68 ,  G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/36 ,  G03F7/38 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285 ,  H01L21/308 ,  H01L21/311 ,  H01L21/316 ,  H01L21/32 ,  H01L21/3213

CPC classification number: G03F1/68 ,  C23C16/047 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/2043 ,  G03F7/2053 ,  G03F7/265 ,  G03F7/36 ,  G03F7/38 ,  G03F7/7005 ,  G03F7/70841 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/02071 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/32139 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/0042

Abstract: A processing method comprises: a first step of depositing on a substrate which is a specimen a film of any one of a semiconductor, a metal and an insulator; a second step of subjecting the surface of the film deposited in the first step, to irradiation with a beam having a given energy to produce a physical damage on the surface; a third step of subjecting the film surface on which the physical damage is produced in the second step, to selective irradiation with light to partially cause a photochemical reaction so that a mask pattern depending on the desired device structure is formed on the film surface; and a fourth step of carrying out photoetching using as a shielding member the mask pattern formed in the third step.

公开(公告)号：US5459003A

公开(公告)日：1995-10-17

申请号：US350014

申请日：1994-12-06

Applicant: Kazuya Ota

Inventor： Kazuya Ota

IPC: G03F7/20 ,  G11B5/31 ,  H01L21/027 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065 ,  G03F9/00

CPC classification number: G03F7/201 ,  G03F7/2022

Abstract: A method of forming side surfaces of photosensitive material removed areas is performed so that the side surfaces are inclined to the surface of a substrate when transferring a pattern formed on a mask onto the substrate coated with a photosensitive material and effecting a developing process on the substrate. An image of the pattern to be transferred onto the substrate and the substrate are relatively shifted in a direction along the surface of the substrate during the transfer.

Abstract translation: 执行形成感光材料移除区域的侧表面的方法，使得当将形成在掩模上的图案转印到涂覆有感光材料的基材上并且在基板上进行显影处理时，侧表面倾斜于基板的表面 。 在转印过程中，要转印到基板和基板上的图案的图像在沿着基板表面的方向上相对移位。

公开(公告)号：US5111240A

公开(公告)日：1992-05-05

申请号：US477371

申请日：1990-02-08

Applicant: Ulrich C. Boettiger ,  Bernhard Hafner

Inventor： Ulrich C. Boettiger ,  Bernhard Hafner

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

CPC classification number: H01L21/266 ,  G03F7/201 ,  G03F7/70283 ,  G03F7/70358 ,  H01L21/2652

Abstract: A method in which pattern elements with predetermined wall profiles and/or lateral shapes, differing from the shapes of the respective pattern elements in an irradiation mask which is used, are formed in a photoresist layer. The method comprises a modification of a conventional photolithographic process, where a substrate supporting the photoresist layer is shifted laterally relative to the mask or the mask image in a continuous mode or in steps during exposure. Also disclosed is an apparatus which shifts a substrate relative to a mask in the x- and/or the y-direction or shifts the path of the beam relative to the substrate, controlling the shifting in a predetermined manner. The method--especially in connection with the apparatus--allows formation of reproducible photoresist patterns with a great variety of differently formed wall profiles and/or lateral shapes. Using the method, photoresist patterns can be flexibly adapted to many applications.

Abstract translation: 在光致抗蚀剂层中形成具有与使用的照射掩模中的各图案元件的形状不同的具有预定壁面和/或横向形状的图案元素的方法。 该方法包括常规光刻工艺的修改，其中支持光致抗蚀剂层的衬底相对于掩模或掩模图像在连续模式中或在曝光期间以步骤横向偏移。 还公开了一种在x和/或y方向上相对于掩模移动衬底或使光束相对于衬底的路径移动的装置，以预定方式控制偏移。 该方法 - 特别是与该装置相关 - 允许形成具有各种各样的不同形式的壁廓和/或侧向形状的可再现的光致抗蚀剂图案。 使用该方法，光致抗蚀剂图案可以灵活地适应于许多应用。

公开(公告)号：US4935334A

公开(公告)日：1990-06-19

申请号：US292086

申请日：1988-12-30

Applicant: Ulrich C. Boettiger ,  Bernhard Hafner

Inventor： Ulrich C. Boettiger ,  Bernhard Hafner

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

CPC classification number: H01L21/266 ,  G03F7/201 ,  G03F7/70283 ,  G03F7/70358 ,  H01L21/2652

Abstract: Disclosed is a method in which pattern elements with predetermined wall profiles and/or lateral shapes, differing from the shapes of the respective pattern elements in an irradiation mask which is used, are formed in a photoresist layer. The method comprises a modification of a conventional photolithographic process, where a substrate supporting the photoresist layer is shifted laterally relative to the mask or the mask image in a continuous mode and or in steps during exposure.Also disclosed is an apparatus which includes means for shifting a substrate relative to a mask into the x- and or the y-direction or means between the mask and the substrate for shifting the path of the beam relative to the substrate, and means for controlling the shifting means.The method--especially in connection with the apparatus--allows formation of reproducible photoresist patterns with a great variety of differently formed, wall profiles and/or lateral shapes. Using the method photoresist patterns can be flexibly adapted to many applications.

公开(公告)号：US4271247A

公开(公告)日：1981-06-02

申请号：US176250

申请日：1980-08-07

Applicant: Albert M. Morrell

Inventor： Albert M. Morrell

IPC: G03F7/20 ,  H01J9/227 ,  H01J29/32 ,  G03C5/00

CPC classification number: H01J29/327 ,  G03F7/201 ,  H01J29/32 ,  H01J9/2278

Abstract: A tube of the shadow mask type having a line screen and a slit aperture mask wherein the slits are arranged in columns and the slits in each column are separated by web portions of the mask is improved by the addition to the screen of light absorbing material in patches located only in alignment with the webs.

Abstract translation: 具有线屏幕和狭缝孔掩模的荫罩类型的管，其中狭缝被布置成列，并且每个列中的狭缝与掩模的腹板部分分开，通过添加到光吸收材料的屏幕中来改善 补片位于仅与腹板对齐的位置。

公开(公告)号：US4239790A

公开(公告)日：1980-12-16

申请号：US75162

申请日：1979-09-12

Applicant: Wolfram A. Bosenberg

Inventor： Wolfram A. Bosenberg

IPC: G03F7/20 ,  B05D3/06

CPC classification number: G03F7/70358 ,  G03F7/201

Abstract: The method entails vibrating the wafer during the exposure of the photoresist in order to eliminate standing waves which occur in layers parallel to the surface of the photoresist layer and which cause alternately exposed and unexposed layers of the photoresist to be present.

Abstract translation: 该方法需要在曝光光致抗蚀剂期间使晶片振动，以消除出现在与光致抗蚀剂层的表面平行的层中的驻波，并且导致存在光致抗蚀剂的交替暴露和未曝光的层。