公开(公告)号：US11658218B2

公开(公告)日：2023-05-23

申请号：US17668992

申请日：2022-02-10

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/408 ,  H01L21/0228 ,  H01L21/02153 ,  H01L21/28158 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US20220270871A1

公开(公告)日：2022-08-25

申请号：US17742712

申请日：2022-05-12

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US20180269065A1

公开(公告)日：2018-09-20

申请号：US15462214

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Wenyu Zhang ,  Wei V. Tang ,  Yixiong Yang ,  Chen-Han Lin ,  Yi Xu ,  Yu Lei ,  Naomi Yoshida ,  Lin Dong ,  Drew Phillips ,  Srividya Natarajan ,  Atashi Basu ,  Kaliappan Muthukumar ,  David Thompson ,  Paul F. Ma

IPC: H01L21/285 ,  C23C14/14 ,  C23C12/00 ,  H01L29/66 ,  H01L29/45 ,  H01L21/28 ,  H01L29/49

CPC classification number: H01L21/28556 ,  C23C12/00 ,  C23C14/14 ,  C23C16/34 ,  H01L21/28088 ,  H01L21/28568 ,  H01L29/456 ,  H01L29/4966 ,  H01L29/66795

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

公开(公告)号：US11996455B2

公开(公告)日：2024-05-28

申请号：US18130201

申请日：2023-04-03

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/408 ,  H01L21/02153 ,  H01L21/0228 ,  H01L21/28158 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US11776806B2

公开(公告)日：2023-10-03

申请号：US17742712

申请日：2022-05-12

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/02063 ,  H01L21/0234 ,  H01L21/02244 ,  H01L21/02334 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76879

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US20230253466A1

公开(公告)日：2023-08-10

申请号：US18130201

申请日：2023-04-03

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C.H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/408 ,  H01L21/0228 ,  H01L21/02153 ,  H01L21/28158 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAIN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAIC).

公开(公告)号：US11289579B2

公开(公告)日：2022-03-29

申请号：US17034116

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US11062900B2

公开(公告)日：2021-07-13

申请号：US16699712

申请日：2019-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Luping Li ,  Shih Chung Chen ,  Kazuya Daito ,  Lin Dong ,  Zhebo Chen ,  Yixiong Yang ,  Steven Hung

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.

公开(公告)号：US20210098581A1

公开(公告)日：2021-04-01

申请号：US17034116

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M. Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C.H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L29/51 ,  H01L21/28 ,  H01L21/02 ,  H01L29/78

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US10177227B1

公开(公告)日：2019-01-08

申请号：US15687747

申请日：2017-08-28

Applicant: Applied Materials, Inc.

Inventor： Naomi Yoshida ,  Lin Dong ,  Shiyu Sun ,  Myungsun Kim ,  Nam Sung Kim ,  Dimitri Kioussis ,  Mikhail Korolik ,  Gaetano Santoro ,  Vanessa Pena

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/417 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78

Abstract: The present disclosure provides methods for forming horizontal gate-all-around (hGAA) structure devices. In one example, a method includes selectively and laterally etching a first group of sidewalls of a first layer in a multi-material layer, wherein the multi-material layer comprises repeating pairs of the first layer and a second layer, the first and the second layers having the first group and a second group of sidewalls respectively, the first group of sidewalls from the first layer exposed through openings defined in the multi-material layer and a group of inner spacers formed atop of the second group of sidewalls from the second layer, forming a recess from the first group of sidewalls of the first layer and defining a vertical wall inward from an outer vertical surface of the inner spacer formed atop of the second layers, and forming an epi-silicon layer from the recess of the first layer.