公开(公告)号：US20140017908A1

公开(公告)日：2014-01-16

申请号：US13923197

申请日：2013-06-20

Applicant: ASM IP Holding B.V.

Inventor： Julien Beynet ,  Ivo Raaijmakers ,  Atsuki Fukazawa

IPC: H01L21/02

CPC classification number: H01L21/02318 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02348

Abstract: A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes.

Abstract translation: 一种形成共形，均匀的电介质膜的方法包括：通过使用含有硅和碳，氮，卤素，氢和/或氧的气体的循环沉积在衬底的沟槽和/或空穴中形成保形电介质膜， 在没有致孔剂气体的情况下; 并对保形电介质膜进行热处理，并继续进行热处理，超出了从膜中去除基本上所有不需要的碳的点，并进一步继续进行热处理，以使沉积在侧壁上的薄膜的一部分基本上均匀的膜性能 的沟槽和/或孔，并且一部分膜沉积在沟槽和/或孔的顶表面和底表面上。

公开(公告)号：US12169361B2

公开(公告)日：2024-12-17

申请号：US16931275

申请日：2020-07-16

Applicant: ASM IP Holding B.V.

Inventor： Ivo Raaijmakers ,  Daniele Piumi ,  Ivan Zyulkov ,  David Kurt de Roest ,  Michael Eugene Givens

IPC: H01L21/311 ,  G03F7/16

Abstract: A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.

公开(公告)号：US11975357B2

公开(公告)日：2024-05-07

申请号：US17547083

申请日：2021-12-09

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: C23C16/06 ,  B05D3/10 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C18/06 ,  C23C18/12

CPC classification number: B05D3/107 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C18/06 ,  C23C18/1208 ,  C23C18/1212 ,  C23C18/1216 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/1245

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

公开(公告)号：US20240087893A1

公开(公告)日：2024-03-14

申请号：US18463433

申请日：2023-09-08

Applicant: ASM IP Holding, B.V.

Inventor： Daniele Piumi ,  Ivo Raaijmakers

IPC: H01L21/033 ,  H01L21/67

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/0332

Abstract: Methods for patterning and forming structures, as well as related structures and systems are disclosed. The methods comprise forming a mandrel on a substrate. Forming the mandrel comprises executing a plurality of etching cycles to thin a structure.

公开(公告)号：US20240003009A1

公开(公告)日：2024-01-04

申请号：US18346608

申请日：2023-07-03

Applicant: ASM IP Holding, B.V

Inventor： Ivo Raaijmakers ,  Theodorus G.M. Oosterlaken

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67

CPC classification number: C23C16/45553 ,  C23C16/4412 ,  H01L21/67017 ,  C23C16/45544 ,  C23C16/45591

Abstract: A semiconductor processing apparatus for processing a plurality of substrates is provided. In a preferred embodiment, the apparatus comprises a reaction chamber. The reaction chamber comprises a reaction space for receiving a substrate boat constructed and arranged for holding the plurality of substrates. The rection chamber further comprise a gas distributor for providing gas into the reaction space and a gas exhaust for removing gas from the reaction space. The boat, the gas distributor and the gas exhaust are constructed and arranged to at least partially enclose the substrates in the boat and to form a gas flow path, in use, from the gas distributor to the gas exhaust, wherein the gas flow path is substantially being directed in between the substrates.