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    SUSCEPTOR CLEANING
    6.
    发明申请
    SUSCEPTOR CLEANING 有权

    公开(公告)号：US20220403507A1

    公开(公告)日：2022-12-22

    申请号：US17840870

    申请日：2022-06-15

    Applicant: ASM IP Holding B.V.

    Inventor： Ivo Raaijmakers

    IPC: C23C16/44 ,  H01L21/687 ,  H01J37/32 ,  C23C16/50

    Abstract: The current disclosure relates to a vapor deposition assembly for depositing material on a substrate. The vapor deposition assembly comprises a treatment chamber for treating susceptors from a deposition chamber that comprises multiple, moveable susceptors. The assembly further comprises a transfer system configured and arranged to move a susceptor between the deposition chamber and the treatment chamber. The disclosure further relates to a method of cleaning as susceptor and to a susceptor treatment apparatus.

    Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
    10.
    发明授权
    Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment 有权
    通过循环沉积和热处理形成保形，均匀的介电膜的方法

    公开(公告)号：US09023737B2

    公开(公告)日：2015-05-05

    申请号：US13923197

    申请日：2013-06-20

    Applicant: ASM IP Holding B.V.

    Inventor： Julien Beynet ,  Ivo Raaijmakers ,  Atsuki Fukazawa

    IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

    CPC classification number: H01L21/02318 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02348

    Abstract: A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes.

    Abstract translation: 一种形成共形，均匀的电介质膜的方法包括：通过使用含有硅和碳，氮，卤素，氢和/或氧的气体的循环沉积在衬底的沟槽和/或空穴中形成保形电介质膜， 在没有致孔剂气体的情况下; 并对保形电介质膜进行热处理，并继续进行热处理，超出了从膜中去除基本上所有不需要的碳的点，并进一步继续进行热处理，以使沉积在侧壁上的薄膜的一部分基本上均匀的膜性能 的沟槽和/或孔，并且一部分膜沉积在沟槽和/或孔的顶表面和底表面上。

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