公开(公告)号：US20210118672A1

公开(公告)日：2021-04-22

申请号：US17072525

申请日：2020-10-16

Applicant: ASM IP Holding B.V.

Inventor： Oreste Madia ,  Andrea Illiberi ,  Michael Eugene Givens ,  Tatiana Ivanova ,  Charles Dezelah ,  Varun Sharma

IPC: H01L21/02

Abstract: Methods of forming indium gallium zinc oxide (IGZO) films by vapor deposition are provided. The IGZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGZO films comprise an IGZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase gallium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.

公开(公告)号：US20230260782A1

公开(公告)日：2023-08-17

申请号：US18305875

申请日：2023-04-24

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/02211 ,  H01L21/02274

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

公开(公告)号：US11664222B2

公开(公告)日：2023-05-30

申请号：US17072525

申请日：2020-10-16

Applicant: ASM IP Holding B.V.

Inventor： Oreste Madia ,  Andrea Illiberi ,  Michael Eugene Givens ,  Tatiana Ivanova ,  Charles Dezelah ,  Varun Sharma

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  H01L21/02565 ,  H01L21/02639

Abstract: Methods of forming indium gallium zinc oxide (IGZO) films by vapor deposition are provided. The IGZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGZO films comprise an IGZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase gallium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.

公开(公告)号：US20210118671A1

公开(公告)日：2021-04-22

申请号：US17072524

申请日：2020-10-16

Applicant: ASM IP Holding B.V.

Inventor： Oreste Madia ,  Andrea Illiberi ,  Giuseppe Alessio Verni ,  Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

Abstract: Methods of forming indium germanium zinc oxide (IGeZO) films by vapor deposition are provided. The IGeZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGeZO films comprise an IGeZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase germanium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.

公开(公告)号：US10607895B2

公开(公告)日：2020-03-31

申请号：US15707786

申请日：2017-09-18

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Chiyu Zhu ,  Kiran Shrestha ,  Pauline Calka ,  Oreste Madia ,  Jan Willem Maes ,  Michael Eugene Givens

IPC: H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L27/092

Abstract: A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20200066512A1

公开(公告)日：2020-02-27

申请号：US16605475

申请日：2018-05-03

Applicant: ASM IP Holding B.V.

Inventor： Eva Tois ,  Viljami Pore ,  Suvi Haukka ,  Toshiya Suzuki ,  Lingyun Jia ,  Sun Ja Kim ,  Oreste Madia

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

公开(公告)号：US11664219B2

公开(公告)日：2023-05-30

申请号：US17463813

申请日：2021-09-01

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31116

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

公开(公告)号：US11501965B2

公开(公告)日：2022-11-15

申请号：US15971601

申请日：2018-05-04

Applicant: ASM IP Holding B.V.

Inventor： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia ,  Eva Tois ,  Suvi Haukka ,  Toshiya Suzuki

IPC: H01L21/02 ,  H01L21/32 ,  H01L21/311 ,  H01L21/321

Abstract: Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.

公开(公告)号：US20220123131A1

公开(公告)日：2022-04-21

申请号：US17499970

申请日：2021-10-13

Applicant: ASM IP Holding B.V.

Inventor： Oreste Madia ,  Giuseppe Alessio Verni ,  Qi Xie ,  Michael Eugene Givens ,  Varun Sharma ,  Andrea Illiberi

IPC: H01L29/66 ,  H01L21/02

Abstract: Methods and systems for depositing threshold voltage shifting layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a threshold voltage shifting layer onto a surface of the substrate. The threshold voltage shifting layers are particularly useful for metal oxide semiconductor field effect transistors.

公开(公告)号：US20210398797A1

公开(公告)日：2021-12-23

申请号：US17463813

申请日：2021-09-01

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.