公开(公告)号：US10510529B2

公开(公告)日：2019-12-17

申请号：US15707878

申请日：2017-09-18

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/033

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

公开(公告)号：US20180350587A1

公开(公告)日：2018-12-06

申请号：US15971601

申请日：2018-05-04

Applicant: ASM IP Holding B.V.

Inventor： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia ,  Eva Tois ,  Suvi Haukka ,  Toshiya Suzuki

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.

公开(公告)号：US20170352550A1

公开(公告)日：2017-12-07

申请号：US15486124

申请日：2017-04-12

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  C23C16/455 ,  C23C16/04 ,  C23C16/56 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/31144 ,  C23C16/04 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/32 ,  H01L21/32139 ,  H01L21/76834

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US12205820B2

公开(公告)日：2025-01-21

申请号：US17808741

申请日：2022-06-24

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/285 ,  B05D1/00 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US20240297039A1

公开(公告)日：2024-09-05

申请号：US18640095

申请日：2024-04-19

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Hideaki Fukuda ,  Viljami J. Pore

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01J2237/332

Abstract: The current disclosure relates to a vapor deposition assembly for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The disclosure also relates to a method for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a vapor-phase silicon precursor according to the formula SiH3X, wherein X is iodine or bromine, into the reaction chamber, removing excess silicon precursor and possible reaction byproducts from the reaction chamber and providing a reactive species generated from a nitrogen-containing plasma into the reaction chamber to form silicon nitride on the substrate. The disclosure further relates to structure and devices formed by the method.

公开(公告)号：US20240047197A1

公开(公告)日：2024-02-08

申请号：US18491428

申请日：2023-10-20

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie ,  Viljami J. Pore

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02669 ,  H01L21/324 ,  H01L21/67213 ,  H01L21/02315 ,  H01L21/02068 ,  H01L21/02178 ,  H01L21/02118

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US20230132743A1

公开(公告)日：2023-05-04

申请号：US18146868

申请日：2022-12-27

Applicant: ASM IP HOLDING B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore ,  Hannu Huotari

IPC: H01L21/02 ,  C23C16/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: Disclosed is a process for forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space by a plurality of deposition cycles. At least one deposition cycle includes contacting a surface of the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that includes reactive species. The reactive species are generated from a gas that flows continuously to the reaction space throughout the at least one deposition cycle. A ratio of a wet etch rate of the SiOC thin film to a wet etch rate of thermal silicon oxide is less than 5.

公开(公告)号：US20220193720A1

公开(公告)日：2022-06-23

申请号：US17547083

申请日：2021-12-09

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: B05D3/10 ,  C23C18/06 ,  C23C18/12 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

公开(公告)号：US20210175092A1

公开(公告)日：2021-06-10

申请号：US17130902

申请日：2020-12-22

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  C23C16/56 ,  H01L21/033 ,  H01L21/02 ,  C23C16/455 ,  H01L21/32 ,  H01L21/3213 ,  C23C16/04 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US10854460B2

公开(公告)日：2020-12-01

申请号：US16504861

申请日：2019-07-08

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3065 ,  C23C16/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/56

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.