公开(公告)号：US20210082692A1

公开(公告)日：2021-03-18

申请号：US17021760

申请日：2020-09-15

Applicant: ASM IP Holding B.V.

Inventor： Yoshiyuki Kikuchi

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  B05D1/00 ,  B05D3/10

Abstract: A method of forming a carbon-containing layer on a surface of a substrate is disclosed. The method can include providing a substrate within a reaction chamber of a reactor, heating a carbon precursor to produce a vaporized gas comprising carbon-containing molecules, providing the vaporized gas to the reaction chamber, and polymerizing the carbon-containing molecules to form the carbon-containing layer on the surface of a substrate. The carbon compound can include 10 or more carbon atoms. Exemplary methods provide carbon-containing layer with desired density and transparency.

公开(公告)号：US12068154B2

公开(公告)日：2024-08-20

申请号：US17225386

申请日：2021-04-08

Applicant: ASM IP Holding B.V.

Inventor： Hirotsugu Sugiura ,  Yoshiyuki Kikuchi

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/02118 ,  C23C16/347 ,  C23C16/45553 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01J2237/332

Abstract: Methods and systems for forming a forming a nitrogen-containing carbon film and structures formed using the methods or systems are disclosed. Exemplary methods include providing a precursor with carbon-terminated carbon-nitrogen bonds. The methods can further include providing a reactant to the reaction chamber.

公开(公告)号：US20240271280A1

公开(公告)日：2024-08-15

申请号：US18436109

申请日：2024-02-08

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Norihiko Ishinohachi ,  Yoshiyuki Kikuchi

IPC: C23C16/455 ,  C23C16/56

CPC classification number: C23C16/45542 ,  C23C16/45553 ,  C23C16/56

Abstract: A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise steps of: a deposition step at a deposition temperature comprising: providing a substrate within a first reaction chamber; providing a precursor to the first reaction chamber; providing a reactant to the first reaction chamber; and providing pulsed plasma power to the first reaction chamber; and a curing step comprising: providing a curing gas to the substrate; providing a first curing step at a first curing temperature; and providing a second curing step at a second curing temperature, wherein the second curing temperature is higher than the first curing temperature.

公开(公告)号：US20240047198A1

公开(公告)日：2024-02-08

申请号：US18227016

申请日：2023-07-27

Applicant: ASM IP Holding B.V.

Inventor： Hirotsugu Sugiura ,  Yoshiyuki Kikuchi

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/32 ,  C23C16/56 ,  C23C16/505

CPC classification number: H01L21/02323 ,  H01L21/02126 ,  H01L21/0234 ,  H01L21/02274 ,  H01L21/0228 ,  H01J37/3244 ,  H01J37/32091 ,  H01J37/32146 ,  C23C16/325 ,  C23C16/56 ,  C23C16/505 ,  H01L21/02167 ,  H01J2237/332

Abstract: Methods and systems of forming treated silicon-carbon material are disclosed. Exemplary methods include depositing silicon-carbon material onto a surface of the substrate and treating the silicon-carbon material. The step of treating can include a first treatment step followed by a second treatment step, wherein the first treatment step includes providing first reductant gas activated species and the second treatment step includes providing one or more of a first oxidant gas activated species and a second reductant gas activated species.

公开(公告)号：US20240304441A1

公开(公告)日：2024-09-12

申请号：US18598145

申请日：2024-03-07

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Norihiko Ishinohachi ,  Yoshiyuki Kikuchi

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02216 ,  H01L21/02348

Abstract: A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise steps of: a deposition step comprising: providing a substrate within a first reaction chamber; providing a vinyl-substituted cyclosiloxane precursor to the first reaction chamber; providing a reactant to the first reaction chamber; and providing pulsed plasma power to the first reaction chamber; and a curing step comprising: providing a curing gas to the substrate; and irradiating the substrate with a UV light.

公开(公告)号：US20240150898A1

公开(公告)日：2024-05-09

申请号：US18386481

申请日：2023-11-02

Applicant: ASM IP Holding B.V.

Inventor： Yoshiyuki Kikuchi ,  Hirotsugu Sugiura ,  Alexey Remnev ,  Koei Aida ,  Lingjun Xue

IPC: C23C16/458 ,  H01J37/32

CPC classification number: C23C16/4585 ,  H01J37/32715 ,  H01J37/32743 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A substrate processing apparatus is provided. A substrate processing apparatus comprises a reaction chamber provided with a chamber wall comprising a first sidewall, a second sidewall disposed opposite to the first sidewall, a bottom wall connected to the first sidewall and the second sidewall; a gate valve tunnel disposed in the first sidewall configured to be closed by a gate valve; a substrate support provided with a top plate and a shaft, the substrate support being disposed within the reaction chamber and configured to support a substrate on the top plate, wherein the substrate support is configured to be vertically movable between a process position and a transfer position; and a liner disposed around perimeter of the substrate support and configured to move with the substrate support, wherein an outer wall of the liner is configured to cover the gate valve tunnel when the substrate support is in the process position.

公开(公告)号：US20230137026A1

公开(公告)日：2023-05-04

申请号：US17973903

申请日：2022-10-26

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Koei Aida ,  Ryo Miyama ,  Yoshiyuki Kikuchi

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  H01L21/02

Abstract: Methods and apparatuses for etching a perimeter of a substrate are disclosed. Exemplary methods and apparatuses can be used to deposit material and selectively etch material at the perimeter of the substrate within the same reaction chamber.

公开(公告)号：US20230129291A1

公开(公告)日：2023-04-27

申请号：US17970987

申请日：2022-10-21

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Yoshiyuki Kikuchi

IPC: H01L21/3065 ,  H01L21/67

Abstract: A method for etching a bevel edge of a substrate. The method includes providing a substrate with a bevel edge after a thin film has been deposited on a top surface of the substrate and rotating the substrate about its center axis. The method also includes, during the rotating, etching the bevel edge by directing flow of atmospheric plasma onto the bevel edge. The flow is parallel to the top surface of the substrate, such as orthogonal to a plane containing a region of the bevel edge being etched by the atmospheric plasma, which may be O2 atmospheric plasma. The etching is performed without loss of thickness of the thin film on the top surface at a radius spaced apart from an outer radius of the substrate. The substrate may be a silicon (Si) wafer, and the thin film may be a carbon film, amorphous carbon, SiC, SiO, or SiN.

公开(公告)号：US20210320003A1

公开(公告)日：2021-10-14

申请号：US17225386

申请日：2021-04-08

Applicant: ASM IP Holding B.V.

Inventor： Hirotsugu Sugiura ,  Yoshiyuki Kikuchi

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455

Abstract: Methods and systems for forming a forming a nitrogen-containing carbon film and structures formed using the methods or systems are disclosed. Exemplary methods include providing a precursor with carbon-terminated carbon-nitrogen bonds. The methods can further include providing a reactant to the reaction chamber.