公开(公告)号：US20220216059A1

公开(公告)日：2022-07-07

申请号：US17568027

申请日：2022-01-04

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Takashi Yoshida ,  Ryu Nakano ,  Ivan Zyulkov ,  Yiting Sun ,  Yoann Francis Tomczak ,  David de Roest

IPC: H01L21/285 ,  H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/02 ,  C23C16/52

Abstract: Methods and related systems for lithographically defining patterns on a substrate are disclosed. An exemplary method includes forming a structure. The method includes providing a substrate to a reaction chamber. The substrate comprises a semiconductor and a surface layer. The surface layer comprises amorphous carbon. The method further comprises forming a barrier layer on the surface layer and depositing a metal-containing layer on the substrate. The metal- containing layer comprises oxygen and a metal.

公开(公告)号：US20210111025A1

公开(公告)日：2021-04-15

申请号：US17065925

申请日：2020-10-08

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US12176243B2

公开(公告)日：2024-12-24

申请号：US18084789

申请日：2022-12-20

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Zecheng Liu

IPC: H01L21/762 ,  H01J37/32 ,  H01L21/67 ,  H01L29/06

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.

公开(公告)号：US12107005B2

公开(公告)日：2024-10-01

申请号：US17491684

申请日：2021-10-01

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore ,  Tommi Paavo Tynell ,  Yu Xu ,  Mikko Ruoho

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/76837 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01J2237/332

Abstract: The current disclosure relates to methods of depositing silicon-containing material on a substrate comprising a gap, wherein the method comprises providing the substrate in a reaction chamber and depositing a carbon-containing inhibition layer on the substrate, and depositing silicon-containing material on the substrate. Depositing the inhibition layer comprises supplying a carbon precursor comprising carbon in the reaction chamber and supplying first plasma in the reaction chamber to form a first reactive species from the carbon precursor for forming the inhibition layer on the substrate. The inhibition layer is deposited preferentially in the vicinity of the top of the gap. The disclosure further relates to methods of forming a structure, methods of manufacturing a device and to a semiconductor processing apparatus.

公开(公告)号：US12027365B2

公开(公告)日：2024-07-02

申请号：US17530983

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Sunja Kim ,  Viljami Pore ,  Jia Li Yao ,  Ranjit Borude ,  Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32 ,  H01L21/762

CPC classification number: H01L21/02315 ,  C23C16/0254 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76224 ,  H01J37/32082 ,  H01J2237/332

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.

公开(公告)号：US11798834B2

公开(公告)日：2023-10-24

申请号：US17741562

申请日：2022-05-11

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/762 ,  C23C16/04 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/76224 ,  C23C16/04 ,  C23C16/45536 ,  C23C16/45544 ,  H01L21/0228 ,  H01L21/02274

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.

公开(公告)号：US11735422B2

公开(公告)日：2023-08-22

申请号：US17065925

申请日：2020-10-08

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/02172 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3105

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US20220165569A1

公开(公告)日：2022-05-26

申请号：US17530983

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Sunja Kim ,  Viljami Pore ,  Jia Li Yao ,  Ranjit Borude ,  Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02 ,  H01L21/762 ,  H01J37/32 ,  C23C16/40 ,  C23C16/02 ,  C23C16/455

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.

公开(公告)号：US11342216B2

公开(公告)日：2022-05-24

申请号：US16792544

申请日：2020-02-17

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/762 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.

公开(公告)号：US12094769B2

公开(公告)日：2024-09-17

申请号：US17530691

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore ,  Jia Li Yao ,  René Henricus Jozef Vervuurt

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/768

CPC classification number: H01L21/76837 ,  H01J37/3244 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/76877

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a first plasma treatment and subjecting the substrate to a second plasma treatment. Thus the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a material on the lower surface.