中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

39 records (took 0.017 seconds)

    Reverse Selective Deposition
    15.
    发明申请
    Reverse Selective Deposition 审中-公开

    公开(公告)号：US20200347493A1

    公开(公告)日：2020-11-05

    申请号：US16701061

    申请日：2019-12-02

    Applicant: Applied Materials, Inc.

    Inventor： FENG Q. LIU ,  Lu Chen ,  Mark Saly ,  Liqi Wu ,  Feng Chen

    IPC: C23C16/04 ,  C23C16/40 ,  C23C16/455

    Abstract: Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize a blocking compound to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance. Some embodiments utilize an unsaturated hydrocarbon as a blocking compound. Some embodiments utilize a triazole as a blocking compound.

    METHODS OF FORMING INTERCONNECT STRUCTURES
    17.
    发明申请
    METHODS OF FORMING INTERCONNECT STRUCTURES 有权

    公开(公告)号：US20250022750A1

    公开(公告)日：2025-01-16

    申请号：US18753020

    申请日：2024-06-25

    Applicant: Applied Materials, Inc.

    Inventor： Shinjae Hwang ,  Yoon Ah Shin ,  Feng Chen ,  Bencherki Mebarki ,  Joung Joo Lee ,  Xianmin Tang

    IPC: H01L21/768

    Abstract: Embodiments of the disclosure provide methods of forming interconnect structures in the manufacture of microelectronic devices. In one or more embodiments, microelectronic devices described herein comprise at least one top interconnect structure that is interconnected to at least one bottom interconnect structure. Embodiments of the disclosure relate to methods of improving barrier layer and metal liner properties in the interconnect structures without increasing capacitance and/or damaging other layers. In some embodiments, the barrier layer is treated with microwave radiation. The treatment process can be implemented in a processing tool including a modular high-frequency emission source.

    SELECTIVE LINER DEPOSITION FOR VIA RESISTANCE REDUCTION
    18.
    发明申请
    SELECTIVE LINER DEPOSITION FOR VIA RESISTANCE REDUCTION 有权

    公开(公告)号：US20240420997A1

    公开(公告)日：2024-12-19

    申请号：US18211502

    申请日：2023-06-19

    Applicant: Applied Materials, Inc.

    Inventor： Yang Zhou ,  Jiajie Cen ,  Zhiyuan Wu ,  Ge Qu ,  Yong Jin Kim ,  Zheng Ju ,  Feng Chen ,  Kevin Kashefi

    IPC: H01L21/768

    Abstract: Methods of forming devices comprise forming a dielectric material on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include passivating a metal material at a bottom of the gap with an alkyl reactant to form a passivation layer on the metal material, the gap defined by the bottom and sidewalls comprising the dielectric material with having a barrier layer thereon. A metal liner is selectively deposited on the barrier layer on the sidewall over the passivation layer on the bottom.

    Methods of selective deposition
    19.
    发明授权
    Methods of selective deposition 有权

    公开(公告)号：US12157943B2

    公开(公告)日：2024-12-03

    申请号：US17011667

    申请日：2020-09-03

    Applicant: Applied Materials, Inc.

    Inventor： Wenjing Xu ,  Gang Shen ,  Yufei Hu ,  Feng Chen ,  Tae Hong Ha

    IPC: H01L21/02 ,  C23C16/02 ,  C23C16/18 ,  H01L21/285

    Abstract: Methods for selective deposition are described herein. Further, methods for improving selectivity comprising an ammonia plasma pre-clean process are also described. In some embodiments, a silyl amine is used to selectively form a surfactant layer on a dielectric surface. A ruthenium film may then be selectively deposited on a conductive surface. In some embodiments, the ammonia plasma removes oxide contaminations from conductive surfaces without adversely affecting the dielectric surface.

Patent Agency Ranking