公开(公告)号：US12243774B2

公开(公告)日：2025-03-04

申请号：US17853150

申请日：2022-06-29

Applicant: Applied Materials, Inc.

Inventor： Rui Li ,  Xiangjin Xie ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen

IPC: H01L21/44 ,  C23C16/34 ,  C23C16/455 ,  H01L21/768

Abstract: Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

公开(公告)号：US20230070489A1

公开(公告)日：2023-03-09

申请号：US17845356

申请日：2022-06-21

Applicant: Applied Materials, Inc.

Inventor： Michael Haverty ,  Lu Chen ,  Muthukumar Kaliappan

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/285

Abstract: Described are microelectronic devices and methods for forming interconnections in microelectronic devices. Embodiments of microelectronic devices include tantalum-containing barrier films comprising an alloy of tantalum and a metal dopant selected from the group consisting of ruthenium (Ru), osmium (Os), palladium (Pd), platinum (Pt), and iridium (Ir).

公开(公告)号：US11410881B2

公开(公告)日：2022-08-09

申请号：US16914416

申请日：2020-06-28

Applicant: Applied Materials, Inc.

Inventor： Rui Li ,  Xiangjin Xie ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen

IPC: H01L21/44 ,  H01L21/768 ,  C23C16/455 ,  C23C16/34

Abstract: Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

公开(公告)号：US11270911B2

公开(公告)日：2022-03-08

申请号：US16867990

申请日：2020-05-06

Applicant: Applied Materials, Inc.

Inventor： Lu Chen ,  Christina L. Engler ,  Gang Shen ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang

IPC: H01L21/768

Abstract: Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å.

公开(公告)号：US20210407853A1

公开(公告)日：2021-12-30

申请号：US16914416

申请日：2020-06-28

Applicant: Applied Materials, Inc.

Inventor： Rui Li ,  Xiangjin Xie ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/455

Abstract: Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

公开(公告)号：US20250112090A1

公开(公告)日：2025-04-03

申请号：US18979075

申请日：2024-12-12

Applicant: Applied Materials, Inc.

Inventor： Ge Qu ,  Zhiyuan Wu ,  Feng Chen ,  Carmen Leal Cervantes ,  Yong Jin Kim ,  Kevin Kashefi ,  Xianmin Tang ,  Wenjing Xu ,  Lu Chen ,  Tae Hong Ha

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

公开(公告)号：US12195845B2

公开(公告)日：2025-01-14

申请号：US18145191

申请日：2022-12-22

Applicant: Applied Materials, Inc.

Inventor： Christina L. Engler ,  Lu Chen

IPC: C23C16/34 ,  C23C16/455 ,  H01J37/32 ,  H01L21/285

Abstract: Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.

公开(公告)号：US12148660B2

公开(公告)日：2024-11-19

申请号：US17487123

申请日：2021-09-28

Applicant: Applied Materials, Inc.

Inventor： Roey Shaviv ,  Suketu Arun Parikh ,  Feng Chen ,  Lu Chen

IPC: H01L21/768 ,  H01L21/02

Abstract: Provided are methods of forming vias with decreased resistance by selectively depositing a barrier layer on an insulating layer and not on a metallic surface. Some embodiments of the disclosure utilize a planar hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked insulating surfaces.

公开(公告)号：US20220181204A1

公开(公告)日：2022-06-09

申请号：US17110818

申请日：2020-12-03

Applicant: Applied Materials, Inc.

Inventor： Kevin Kashefi ,  Alexander Jansen ,  Mehul Naik ,  He Ren ,  Lu Chen ,  Feng Chen

IPC: H01L21/768 ,  H01L21/67

Abstract: Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.

公开(公告)号：US20210351072A1

公开(公告)日：2021-11-11

申请号：US16867990

申请日：2020-05-06

Applicant: Applied Materials, Inc.

Inventor： Lu Chen ,  Christina L. Engler ,  Gang Shen ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang

IPC: H01L21/768

Abstract: Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å.