公开(公告)号：US20240420949A1

公开(公告)日：2024-12-19

申请号：US18210522

申请日：2023-06-15

Applicant: Applied Materials, Inc.

Inventor： Woongsik Nam ,  Euhngi Lee ,  Tianyang Li ,  Jisung Park ,  Hang Yu ,  Deenesh Padhi ,  Shichen Fu ,  Yufeng Jiang

IPC: H01L21/02

Abstract: Exemplary processing methods may include i) providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include one or more features defining one or more sidewalls. The methods may include ii) forming plasma effluents of the one or more deposition precursors. The methods may include iii) contacting the substrate with the plasma effluents of the one or more deposition precursors. The contacting may deposit a doped silicon-and-oxygen-containing material on the substrate. A first portion of the doped silicon-and-oxygen-containing material deposited on the one or more sidewalls of the one or more features may be characterized by a poorer film quality than a second portion of the doped silicon-and-oxygen-containing material deposited on a lower portion of the one or more features.

公开(公告)号：US20240014039A1

公开(公告)日：2024-01-11

申请号：US17861691

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Jeong Hwan Kim ,  Yeonju Kwak ,  Qian Fu ,  Siyu Zhu ,  Chuanxi Yang ,  Hang Yu

IPC: H01L21/033

CPC classification number: H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the oxygen-containing precursor to produce oxygen-containing plasma effluents. The methods may include contacting a substrate housed in the processing region with the oxygen-containing plasma effluents. The substrate may include a boron-and-nitrogen-containing material overlying a carbon-containing material. The boron-and-nitrogen-containing material comprises a plurality of openings. The methods may include etching the carbon-containing material.

公开(公告)号：US11869795B2

公开(公告)日：2024-01-09

申请号：US17371549

申请日：2021-07-09

Applicant: Applied Materials, Inc.

Inventor： Saketh Pemmasani ,  Akshay Dhanakshirur ,  Mayur Govind Kulkarni ,  Madhu Santosh Kumar Mutyala ,  Hang Yu ,  Deenesh Padhi

IPC: H01L21/683 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01L21/6833 ,  C23C16/4586 ,  H01J37/32697 ,  H01J37/32724 ,  H01J2237/3321

Abstract: Exemplary substrate support assemblies may include a chuck body defining a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. The substrate support surface may define an annular groove and/or ridge. A subset of the plurality of protrusions may be disposed within the annular groove and/or ridge. The substrate support assemblies may include a support stem coupled with the chuck body.

公开(公告)号：US20230008922A1

公开(公告)日：2023-01-12

申请号：US17371549

申请日：2021-07-09

Applicant: Applied Materials, Inc.

Inventor： Saketh Pemmasani ,  Akshay Dhanakshirur ,  Mayur Govind Kulkarni ,  Madhu Santosh Kumar Mutyala ,  Hang Yu ,  Deenesh Padhi

IPC: H01L21/683 ,  H01J37/32 ,  C23C16/458

Abstract: Exemplary substrate support assemblies may include a chuck body defining a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. The substrate support surface may define an annular groove and/or ridge. A subset of the plurality of protrusions may be disposed within the annular groove and/or ridge. The substrate support assemblies may include a support stem coupled with the chuck body.

公开(公告)号：US20220415651A1

公开(公告)日：2022-12-29

申请号：US17361925

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Qixin Shen ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Gill Yong Lee ,  Sung-Kwan Kang ,  Abdul Wahab Mohammed ,  Hailing Liu

IPC: H01L21/02 ,  H01L21/033 ,  H01L27/108

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a silicon nitride hard mask layer on a ruthenium layer. Forming the silicon nitride hard mask layer on the ruthenium comprises pre-treating the ruthenium layer with a plasma to form an interface layer on the ruthenium layer; and forming a silicon nitride layer on the interface layer by plasma-enhanced chemical vapor deposition (PECVD). Pre-treating the ruthenium layer, in some embodiments, results in the interface layer having a reduced roughness and the memory device having a reduced resistivity compared to a memory device that does not include the interface layer.

公开(公告)号：US11515145B2

公开(公告)日：2022-11-29

申请号：US17018173

申请日：2020-09-11

Applicant: Applied Materials, Inc.

Inventor： Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi

IPC: H01L21/02 ,  C23C16/38 ,  C23C8/36 ,  C23C8/24 ,  H01L21/033

Abstract: Methods for forming a SiBN film comprising depositing a film on a feature on a substrate. The method comprises in a first cycle, depositing a SiB layer on a substrate in a chamber using a chemical vapor deposition process, the substrate having at least one feature thereon, the at least one feature comprising an upper surface, a bottom surface and sidewalls, the SiB layer formed on the upper surface, the bottom surface and the sidewalls. In a second cycle, the SiB layer is treated with a plasma comprising a nitrogen-containing gas to form a conformal SiBN film.

公开(公告)号：US11157661B2

公开(公告)日：2021-10-26

申请号：US16716274

申请日：2019-12-16

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Sidharth Bhatia ,  Garrett Ho-Yee Sin ,  Pramod Nambiar ,  Hang Yu ,  Sanjay Kamath ,  Deenesh Padhi ,  Heng-Cheng Pai

IPC: G06F30/12 ,  G06F16/904 ,  G06F16/903 ,  G06F119/18

Abstract: A process development visualization tool generates a first visualization of a parameter associated with a manufacturing process, and provides a GUI control element associated with a process variable of the manufacturing process, wherein the GUI control element has a first setting associated with a first value for the process variable. The process development tool receives a user input to adjust the GUI control element from the first setting to a second setting, determines a second value for the process variable based on the second setting, and determines a second set of values for the parameter that are associated with the second value for the process variable. The process development tool then generates a second visualization of the parameter, wherein the second visualization represents the second set of values for the parameter that are associated with the second value for the process variable.

公开(公告)号：US10950430B2

公开(公告)日：2021-03-16

申请号：US16444865

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Hang Yu ,  Deenesh Padhi ,  Changling Li ,  Gregory M. Amico ,  Sanjay G. Kamath

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/306 ,  H01L21/3065

Abstract: Embodiments of the present disclosure relate to methods for in-situ deposition and treatment of a thin film for improved step coverage. In one embodiment, the method for processing a substrate is provided. The method includes forming a dielectric layer on patterned features of the substrate by exposing the substrate to a gas mixture of a first precursor and a second precursor simultaneously with plasma present in a process chamber, wherein the plasma is formed by a first pulsed RF power, exposing the dielectric layer to a first plasma treatment using a gas mixture of nitrogen and helium in the process chamber, and performing a plasma etch process by exposing the dielectric layer to a plasma formed from a gas mixture of a fluorine-containing precursor and a carrier gas, wherein the plasma is formed in the process chamber by a second pulsed RF power.

公开(公告)号：US20200176241A1

公开(公告)日：2020-06-04

申请号：US16676097

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Hang Yu ,  Philip Allan Kraus ,  Sanjay G. Kamath ,  William John Durand ,  Lakmal Charidu Kalutarage ,  Abhijit B. Mallick ,  Changling Li ,  Deenesh Padhi ,  Mark Joseph Saly ,  Thai Cheng Chua ,  Mihaela A. Balseanu

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311 ,  C23C16/34 ,  C23C16/56

Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.

公开(公告)号：US20250125145A1

公开(公告)日：2025-04-17

申请号：US18485172

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Tianyang Li ,  Hang Yu ,  Rui Cheng ,  Deenesh Padhi ,  Woongsik Nam

IPC: H01L21/02 ,  H01J37/32

Abstract: Exemplary methods of forming a silicon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber and include one or more features. The methods may include generating plasma effluents of the silicon-containing precursor in the processing region. The methods may include depositing a silicon-containing material on a vertically extending portion and a horizontally extending portion of the feature. Methods include soaking the deposited silicon-containing material with a second silicon-containing material.