公开(公告)号：US20210269916A1

公开(公告)日：2021-09-02

申请号：US16803963

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Christina L. Engler ,  Lu Chen

IPC: C23C16/34 ,  H01L21/285 ,  H01J37/32 ,  C23C16/455

Abstract: Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.

公开(公告)号：US20250029874A1

公开(公告)日：2025-01-23

申请号：US18909047

申请日：2024-10-08

Applicant: Applied Materials, Inc.

Inventor： Roey Shaviv ,  Suketu Arun Parikh ,  Feng Chen ,  Lu Chen

IPC: H01L21/768 ,  H01L21/02

Abstract: Provided are methods of forming vias with decreased resistance by selectively depositing a barrier layer on an insulating layer and not on a metallic surface. Some embodiments of the disclosure utilize a planar hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked insulating surfaces.

公开(公告)号：US11955382B2

公开(公告)日：2024-04-09

申请号：US17110818

申请日：2020-12-03

Applicant: Applied Materials, Inc.

Inventor： Kevin Kashefi ,  Alexander Jansen ,  Mehul Naik ,  He Ren ,  Lu Chen ,  Feng Chen

IPC: H01L21/76 ,  H01L21/67 ,  H01L21/768 ,  H01L21/687

CPC classification number: H01L21/76885 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76829 ,  H01L21/76883 ,  H01L21/68707

Abstract: Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.

公开(公告)号：US11680313B2

公开(公告)日：2023-06-20

申请号：US16866974

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Lu Chen ,  Seshadri Ganguli

IPC: C23C16/00 ,  C23C16/04 ,  C23C16/455 ,  C23C16/40 ,  H01L21/768 ,  C23C16/34 ,  C23C16/56

CPC classification number: C23C16/04 ,  C23C16/042 ,  C23C16/34 ,  C23C16/403 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76879

Abstract: Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize an unsaturated hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance.

公开(公告)号：US11566324B2

公开(公告)日：2023-01-31

申请号：US16803963

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Christina L. Engler ,  Lu Chen

IPC: C23C16/34 ,  H01L21/285 ,  C23C16/455 ,  H01J37/32

Abstract: Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.

公开(公告)号：US20220328348A1

公开(公告)日：2022-10-13

申请号：US17853150

申请日：2022-06-29

Applicant: Applied Materials, Inc.

Inventor： Rui Li ,  Xiangjin Xie ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/34

Abstract: Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

公开(公告)号：US20220122923A1

公开(公告)日：2022-04-21

申请号：US17072806

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Lu Chen ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Chen

IPC: H01L23/532

Abstract: Embodiments of the disclosure relate to methods and materials for forming barrier layers with enhanced barrier performance and/or reduced via resistance. Some embodiments of the disclosure provide methods for passivating a metal surface by exposing the metal surface to a metal complex comprising an organic ligand with at least three carbon atoms and a double or triple bond that eta bonds with a central metal atom. Some embodiments provide barrier layers within vias which enable a reduction in resistance of at least 25% as a result of thinner barrier layers with equivalent barrier properties.

公开(公告)号：US10930550B2

公开(公告)日：2021-02-23

申请号：US16402607

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： Seshadri Ganguli ,  Sang Ho Yu ,  Lu Chen

IPC: H01L21/786 ,  H01L21/768 ,  H01L21/02 ,  C23C16/56 ,  C23C16/455 ,  C23C16/34

Abstract: Electronic devices and methods with a barrier layer and methods of forming the barrier layer are described. A substrate can be exposed to a metal precursor (e.g., a tantalum precursor), a reactant (e.g., ammonia) and an optional plasma to form a first thickness of the barrier layer. An optional aluminum film can be formed on the first barrier layer and a second barrier layer is formed on the first barrier layer to form barrier layer with an aluminum inter-layer.

公开(公告)号：US20190341304A1

公开(公告)日：2019-11-07

申请号：US16402607

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： Seshadri Ganguli ,  Sang Ho Yu ,  Lu Chen

IPC: H01L21/768 ,  H01L21/02

Abstract: Electronic devices and methods with a barrier layer and methods of forming the barrier layer are described. A substrate can be exposed to a metal precursor (e.g., a tantalum precursor), a reactant (e.g., ammonia) and an optional plasma to form a first thickness of the barrier layer. An optional aluminum film can be formed on the first barrier layer and a second barrier layer is formed on the first barrier layer to form barrier layer with an aluminum inter-layer.

公开(公告)号：US12211743B2

公开(公告)日：2025-01-28

申请号：US17466732

申请日：2021-09-03

Applicant: Applied Materials, Inc.

Inventor： Ge Qu ,  Zhiyuan Wu ,  Feng Chen ,  Carmen Leal Cervantes ,  Yong Jin Kim ,  Kevin Kashefi ,  Xianmin Tang ,  Wenjing Xu ,  Lu Chen ,  Tae Hong Ha

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.