公开(公告)号：US11821070B2

公开(公告)日：2023-11-21

申请号：US17095444

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Muthukumar Kaliappan ,  Jeffrey W. Anthis ,  Michael Haverty

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/18

CPC classification number: C23C16/40 ,  C23C16/18 ,  C23C16/45534 ,  C23C16/45553

Abstract: Methods of depositing metal films comprising exposing a substrate surface to a first metal precursor followed by a non-oxygen containing reducing agent comprising a second metal to form a zero-valent first metal film are described. The reducing agent has a metal center that is more electropositive than the metal center of the first metal precursor. In some embodiments, methods of depositing ruthenium films are described in which a substrate surface is exposed to a ruthenium precursor to form a ruthenium containing film on the substrate surface followed by exposure to a non-oxygen containing reducing agent to reduce the ruthenium containing film to a zero-valent ruthenium film and generate an oxidized form of the reducing agent.

公开(公告)号：US20210140041A1

公开(公告)日：2021-05-13

申请号：US17095444

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Muthukumar Kaliappan ,  Jeffrey W. Anthis ,  Michael Haverty

IPC: C23C16/40 ,  C23C16/18 ,  C23C16/455

Abstract: Methods of depositing metal films comprising exposing a substrate surface to a first metal precursor followed by a non-oxygen containing reducing agent comprising a second metal to form a zero-valent first metal film are described. The reducing agent has a metal center that is more electropositive than the metal center of the first metal precursor. In some embodiments, methods of depositing ruthenium films are described in which a substrate surface is exposed to a ruthenium precursor to form a ruthenium containing film on the substrate surface followed by exposure to a non-oxygen containing reducing agent to reduce the ruthenium containing film to a zero-valent ruthenium film and generate an oxidized form of the reducing agent.

公开(公告)号：US12281382B2

公开(公告)日：2025-04-22

申请号：US18201442

申请日：2023-05-24

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/56 ,  H01L21/02 ,  H01L21/32

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20240087881A1

公开(公告)日：2024-03-14

申请号：US17896753

申请日：2022-08-26

Applicant: Applied Materials, Inc.

Inventor： Michael Haverty ,  Shruba Gangopadhyay ,  Bo Xie ,  Yijun Liu ,  Ruitong Xiong ,  Rui Lu ,  Xiaobo Li ,  Li-Qun Xia ,  Lakmal C. Kalutarage ,  Lauren Bagby

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/02274 ,  H01J2237/332 ,  H01L21/02348

Abstract: Embodiments include semiconductor processing methods to form low-K films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system, wherein the one or more deposition precursors include a silicon-containing precursor. The silicon-containing precursor may include a carbon chain. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

公开(公告)号：US20240071927A1

公开(公告)日：2024-02-29

申请号：US18236562

申请日：2023-08-22

Applicant: Applied Materials, Inc.

Inventor： Shinjae Hwang ,  Feng Chen ,  Muthukumar Kaliappan ,  Michael Haverty

IPC: H01L23/532 ,  C23C16/455 ,  H01L21/768

CPC classification number: H01L23/53209 ,  C23C16/45525 ,  H01L21/76879 ,  H01L2224/27452 ,  H01L2224/29398

Abstract: Methods of forming interconnects and electronic devices are described. Methods of forming interconnects include forming a tantalum nitride layer on a substrate; forming a ruthenium layer on the tantalum nitride layer; and exposing the tantalum nitride layer and ruthenium layer to a plasma comprising a mixture of hydrogen (H2) and argon (Ar) to form a tantalum doped ruthenium layer thereon. Apparatuses for performing the methods are also described.

公开(公告)号：US20230317516A1

公开(公告)日：2023-10-05

申请号：US17864552

申请日：2022-07-14

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Michael Haverty ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Aaron Dangerfield ,  Michael L. McSwiney ,  Feng Q. Liu ,  Xiangjin Xie

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76831 ,  H01L21/76843 ,  H01L21/76879 ,  H01L23/5226

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a metal-carbonyl containing precursor to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US20230268415A1

公开(公告)日：2023-08-24

申请号：US17863656

申请日：2022-07-13

Applicant: Applied Materials, Inc.

Inventor： Michael Haverty ,  Avgerinos V. Gelatos ,  Gaurav Thareja

IPC: H01L29/45 ,  H01L29/417 ,  H01L29/40 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/458 ,  H01L29/41791 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66795

Abstract: Embodiments of the disclosure provide methods and electronic devices comprising a work function layer comprising a material that forms a conductive oxide with or without titanium. The electronic devices comprise a silicon layer with the work function layer thereon and a metal contact on the work function layer.

公开(公告)号：US20230253201A1

公开(公告)日：2023-08-10

申请号：US18134802

申请日：2023-04-14

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02211 ,  H01L21/0217 ,  C23C16/4408 ,  C23C16/345 ,  C23C16/45553 ,  H01L21/0228

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US20200149158A1

公开(公告)日：2020-05-14

申请号：US16739992

申请日：2020-01-10

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Michael Haverty ,  Aaron Dangerfield ,  Stephen Weeks ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: C23C16/40 ,  C23C16/455

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.

公开(公告)号：US20240087880A1

公开(公告)日：2024-03-14

申请号：US17896734

申请日：2022-08-26

Applicant: Applied Materials, Inc.

Inventor： Shruba Gangopadhyay ,  Bhaskar Jyoti Bhuyan ,  Michael Haverty ,  Bo Xie ,  Li-Qun Xia ,  Rui Lu ,  Yijun Liu ,  Ruitong Xiong ,  Xiaobo Li ,  Lakmal C. Kalutarage ,  Lauren Bagby

IPC: H01L21/02 ,  C23C16/30 ,  H01J37/32

CPC classification number: H01L21/02126 ,  C23C16/30 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/02208 ,  H01L21/02274

Abstract: Embodiments include semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.