公开(公告)号：US12281382B2

公开(公告)日：2025-04-22

申请号：US18201442

申请日：2023-05-24

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/56 ,  H01L21/02 ,  H01L21/32

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20240071927A1

公开(公告)日：2024-02-29

申请号：US18236562

申请日：2023-08-22

Applicant: Applied Materials, Inc.

Inventor： Shinjae Hwang ,  Feng Chen ,  Muthukumar Kaliappan ,  Michael Haverty

IPC: H01L23/532 ,  C23C16/455 ,  H01L21/768

CPC classification number: H01L23/53209 ,  C23C16/45525 ,  H01L21/76879 ,  H01L2224/27452 ,  H01L2224/29398

Abstract: Methods of forming interconnects and electronic devices are described. Methods of forming interconnects include forming a tantalum nitride layer on a substrate; forming a ruthenium layer on the tantalum nitride layer; and exposing the tantalum nitride layer and ruthenium layer to a plasma comprising a mixture of hydrogen (H2) and argon (Ar) to form a tantalum doped ruthenium layer thereon. Apparatuses for performing the methods are also described.

公开(公告)号：US20230317516A1

公开(公告)日：2023-10-05

申请号：US17864552

申请日：2022-07-14

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Michael Haverty ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Aaron Dangerfield ,  Michael L. McSwiney ,  Feng Q. Liu ,  Xiangjin Xie

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76831 ,  H01L21/76843 ,  H01L21/76879 ,  H01L23/5226

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a metal-carbonyl containing precursor to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US20230253201A1

公开(公告)日：2023-08-10

申请号：US18134802

申请日：2023-04-14

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02211 ,  H01L21/0217 ,  C23C16/4408 ,  C23C16/345 ,  C23C16/45553 ,  H01L21/0228

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US20200149158A1

公开(公告)日：2020-05-14

申请号：US16739992

申请日：2020-01-10

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Michael Haverty ,  Aaron Dangerfield ,  Stephen Weeks ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: C23C16/40 ,  C23C16/455

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.

公开(公告)号：US20230295794A1

公开(公告)日：2023-09-21

申请号：US18201442

申请日：2023-05-24

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/56 ,  H01L21/32 ,  H01L21/02

CPC classification number: C23C16/042 ,  C23C16/0272 ,  C23C16/56 ,  H01L21/32 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/02211 ,  H01L21/0217

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20230070489A1

公开(公告)日：2023-03-09

申请号：US17845356

申请日：2022-06-21

Applicant: Applied Materials, Inc.

Inventor： Michael Haverty ,  Lu Chen ,  Muthukumar Kaliappan

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/285

Abstract: Described are microelectronic devices and methods for forming interconnections in microelectronic devices. Embodiments of microelectronic devices include tantalum-containing barrier films comprising an alloy of tantalum and a metal dopant selected from the group consisting of ruthenium (Ru), osmium (Os), palladium (Pd), platinum (Pt), and iridium (Ir).

公开(公告)号：US20220406595A1

公开(公告)日：2022-12-22

申请号：US17355154

申请日：2021-06-22

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Doreen Wei Ying Yong ,  John Sudijono ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  Michael Haverty ,  Muthukumar Kaliappan ,  Yingqian Chen ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220372616A1

公开(公告)日：2022-11-24

申请号：US17315223

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC: C23C16/04 ,  C23C16/56 ,  C23C16/02

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20220230874A1

公开(公告)日：2022-07-21

申请号：US17151240

申请日：2021-01-18

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/44

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).