公开(公告)号：US20220064784A1

公开(公告)日：2022-03-03

申请号：US17011667

申请日：2020-09-03

Applicant: Applied Materials, Inc.

Inventor： Wenjing Xu ,  Gang Shen ,  Yufei Hu ,  Feng Chen ,  Tae Hong Ha

IPC: C23C16/18 ,  H01L21/285 ,  H01L21/02 ,  C23C16/02

Abstract: Methods for selective deposition are described herein. Further, methods for improving selectivity comprising an ammonia plasma pre-clean process are also described. In some embodiments, a silyl amine is used to selectively form a surfactant layer on a dielectric surface. A ruthenium film may then be selectively deposited on a conductive surface. In some embodiments, the ammonia plasma removes oxide contaminations from conductive surfaces without adversely affecting the dielectric surface.

公开(公告)号：US20210351136A1

公开(公告)日：2021-11-11

申请号：US16909148

申请日：2020-06-23

Applicant: Applied Materials, Inc.

Inventor： Gang Shen ,  Feng Chen ,  Yizhak Sabba ,  Tae Hong Ha ,  Xianmin Tang ,  Zhiyuan Wu ,  Wenjing Xu

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

Abstract: Described are microelectronic device comprising a dielectric layer formed on a substrate, a feature 206 comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming an microelectronic device comprising the two metal liner film on the barrier layer.

公开(公告)号：US20190115254A1

公开(公告)日：2019-04-18

申请号：US16159128

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Ben-Li Sheu ,  Feng Q. Liu ,  Tae Hong Ha ,  Mei Chang ,  Shirish Pethe

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

Abstract: Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.

公开(公告)号：US10157787B2

公开(公告)日：2018-12-18

申请号：US15384219

申请日：2016-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Jin Hee Park ,  Tae Hong Ha ,  Sang-Hyeob Lee ,  Thomas Jongwan Kwon ,  Jaesoo Ahn ,  Xianmin Tang ,  Er-Xuan Ping ,  Sree Kesapragada

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/48 ,  C23C16/455 ,  C23C16/04 ,  C23C16/16 ,  C23C16/18 ,  C23C16/56 ,  H01L21/67 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.

公开(公告)号：US20250112090A1

公开(公告)日：2025-04-03

申请号：US18979075

申请日：2024-12-12

Applicant: Applied Materials, Inc.

Inventor： Ge Qu ,  Zhiyuan Wu ,  Feng Chen ,  Carmen Leal Cervantes ,  Yong Jin Kim ,  Kevin Kashefi ,  Xianmin Tang ,  Wenjing Xu ,  Lu Chen ,  Tae Hong Ha

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

公开(公告)号：US11948836B2

公开(公告)日：2024-04-02

申请号：US17498247

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Sang-Hyeob Lee ,  Chris Pabelico ,  Yi Xu ,  Tae Hong Ha ,  Xianmin Tang ,  Jin Hee Park

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/76831 ,  H01L21/76837 ,  H01L21/76876 ,  H01L21/76877

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

公开(公告)号：US20210366722A1

公开(公告)日：2021-11-25

申请号：US16881145

申请日：2020-05-22

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Xuesong Lu ,  Tae Hong Ha ,  Xianmin Tang ,  Andrew Nguyen ,  Tza-Jing Gung ,  Philip A. Kraus ,  Chung Nang Liu ,  Hui Sun ,  Yufei Hu

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/683 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/8234

Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.

公开(公告)号：US20210351072A1

公开(公告)日：2021-11-11

申请号：US16867990

申请日：2020-05-06

Applicant: Applied Materials, Inc.

Inventor： Lu Chen ,  Christina L. Engler ,  Gang Shen ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang

IPC: H01L21/768

Abstract: Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å.

公开(公告)号：US11171046B2

公开(公告)日：2021-11-09

申请号：US16837365

申请日：2020-04-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Feng Chen ,  Yufei Hu ,  Wenjing Xu ,  Gang Shen ,  Zhiyuan Wu ,  Tae Hong Ha

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  H01L23/522

Abstract: Methods and apparatus for forming an interconnect structure, the method including selectively depositing two or more capping layers atop a top surface of a via within a low-k dielectric layer, wherein the two or more capping layers include a first layer of ruthenium and a second layer of cobalt.

公开(公告)号：US11171045B2

公开(公告)日：2021-11-09

申请号：US16401133

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Sang-Hyeob Lee ,  Chris Pabelico ,  Yi Xu ,  Tae Hong Ha ,  Xianmin Tang ,  Jin Hee Park

IPC: H01L21/768 ,  H01L21/02

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.