公开(公告)号：US20240392135A1

公开(公告)日：2024-11-28

申请号：US18790753

申请日：2024-07-31

Applicant: CubicPV Inc.

Inventor： Michael D. Irwin ,  Erin Sanehira

IPC: C09D1/00 ,  B05D3/02 ,  C03C17/25

Abstract: A method for preparing a nickel oxide precursor ink comprising: preparing a solvent comprising diols and alcohol amines; adding nickel nitrate into the solvent to form a nickel nitrate containing solution; adding at least one metal acetate into the nickel nitrate containing solution to form a nickel nitrate and metal acetate containing solution; adding water to the nickel nitrate and metal acetate containing solution to form a nickel oxide precursor mixture; heating the nickel oxide precursor mixture to 60 to 75 Celsius; and cooling the nickel oxide precursor mixture to form the nickel oxide precursor ink.

公开(公告)号：US20230357632A1

公开(公告)日：2023-11-09

申请号：US18313207

申请日：2023-05-05

Applicant: CubicPV Inc.

Inventor： Michael D. Irwin ,  Xiao-Xin Gao ,  Zhaofu Fei ,  Paul J. Dyson ,  Mohammad Khaja Nazeeruddin

IPC: C09K11/66 ,  B05D1/00 ,  C09K11/02

CPC classification number: C09K11/664 ,  B05D1/005 ,  C09K11/025 ,  C09K2211/10

Abstract: A method including forming a lead halide precursor ink comprising a group 1 metal halide, a lead halide, an ionic liquid, and a solvent; depositing the lead halide precursor ink onto a substrate; drying the lead halide precursor ink to form a lead halide film; and annealing the lead halide film.

公开(公告)号：US20220187695A1

公开(公告)日：2022-06-16

申请号：US17688250

申请日：2022-03-07

Applicant: CUBICPV INC.

Inventor： Michael D. Irwin ,  Kamil Mielczarek ,  Vivek V. Dhas

IPC: G03C8/36 ,  C01G21/16 ,  C01D3/12 ,  C07C19/00 ,  B05D1/38 ,  H01L51/00 ,  B05D3/10 ,  H01L51/42 ,  C09D11/52 ,  H01G9/20

Abstract: A method for preparing photoactive perovskite materials. The method comprises the steps of: introducing a lead halide and a first solvent to a first vessel and contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution, introducing a Group 1 metal halide a second solvent into a second vessel and contacting the Group 1 metal halide with the second solvent to dissolve the Group 1 metal halide to form a Group 1 metal halide solution, and contacting the lead halide solution with the Group 1 metal halide solution to form a thin-film precursor ink. The method further comprises depositing the thin-film precursor ink onto a substrate, drying the thin-film precursor ink to form a thin film, annealing the thin film; and rinsing the thin film with a salt solution.

公开(公告)号：US12300485B2

公开(公告)日：2025-05-13

申请号：US18391435

申请日：2023-12-20

Applicant: CubicPV Inc.

Inventor： Michael D. Irwin ,  Michael Holland ,  Nicholas Anderson

IPC: C30B29/22 ,  C07F7/24 ,  H01L21/02 ,  H10K10/29 ,  H10K10/46 ,  H10K30/00 ,  H10K30/10

Abstract: A perovskite material that has a perovskite crystal lattice having a formula of CxMyXz, and alkyl polyammonium cations disposed within or at a surface of the perovskite crystal lattice; wherein x, y, and z, are real numbers; C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine; M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr, and combinations thereof; and X comprises one or more anions each selected from the group consisting of halides, pseudohalides, chalcogenides, and combinations thereof.

公开(公告)号：US12243740B2

公开(公告)日：2025-03-04

申请号：US16665815

申请日：2019-10-28

Applicant: CubicPV Inc.

Inventor： Michael D. Irwin ,  Michael Holland ,  Nicholas Anderson

IPC: C07F7/24 ,  C30B29/22 ,  H01L21/02 ,  H10K10/29 ,  H10K10/46 ,  H10K30/00 ,  H10K30/10

Abstract: A perovskite material that has a perovskite crystal lattice having a formula of CxMyXz, where x, y, and z, are real numbers. Bulky organic cations reside near a surface or a grain boundary of the perovskite crystal lattice. C includes one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, methylammonium, formamidinium, guanidinium, and ethene tetramine. M includes one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr and combinations thereof. X includes one or more anions each selected from the group consisting of halides, sulfides, selenides, and combinations thereof.

公开(公告)号：US20240114766A1

公开(公告)日：2024-04-04

申请号：US18531461

申请日：2023-12-06

Applicant: CubicPV Inc.

Inventor： Michael D. Irwin ,  Kamil Mielczarek ,  Nicholas Charles Anderson

IPC: H10K85/20 ,  C08G77/385 ,  C08K3/04 ,  C08L25/06 ,  C09D125/08 ,  C09D125/18 ,  C09D129/04 ,  C09D135/08 ,  C09D139/06 ,  H01L21/56 ,  H01L23/29

CPC classification number: H10K85/211 ,  C08G77/385 ,  C08K3/045 ,  C08L25/06 ,  C09D125/08 ,  C09D125/18 ,  C09D129/04 ,  C09D135/08 ,  C09D139/06 ,  H01L21/56 ,  H01L23/293 ,  H10K85/215 ,  Y02E10/549

Abstract: A method for producing a perovskite material photovoltaic device, the method comprising: depositing a layer comprising a fullerene or fullerene derivative on a perovskite material; depositing a cross-linking agent on the perovskite material or the layer comprising the fullerene or fullerene derivative, wherein the cross-linking agent comprises a silane, wherein the silane is a halosilyalkane; and depositing one or more polymers on the perovskite material or the layer comprising the fullerene or fullerene derivative.

公开(公告)号：US20240008295A1

公开(公告)日：2024-01-04

申请号：US18469253

申请日：2023-09-18

Applicant: CubicPV Inc.

Inventor： Michael D. Irwin ,  Jerred A. Chute ,  Vivek V. Dhas

IPC: H10K30/00 ,  H03K17/22 ,  H10K71/40 ,  H03K5/19 ,  H03K5/24 ,  H10K85/30 ,  H10K71/12 ,  B05D3/10 ,  H10K30/15 ,  B05D1/38 ,  H01G9/20 ,  H01L31/0304

CPC classification number: H10K30/451 ,  H03K17/223 ,  H10K71/40 ,  H03K5/19 ,  H03K5/2472 ,  H10K85/30 ,  H10K71/12 ,  B05D3/107 ,  H10K30/151 ,  B05D1/38 ,  H10K30/15 ,  H01G9/2045 ,  H01L31/0304 ,  Y02E10/542 ,  H01L2031/0344

Abstract: A method for preparing photoactive perovskite materials. The method comprises the steps of preparing a lead and tin halide precursor ink. Preparing a lead and tin halide precursor ink comprises the steps of introducing a lead halide and a tin halide into a vessel; introducing a first solvent to the vessel; and contacting the lead halide and the halide with the first solvent to dissolve the lead halide and the tin halide to form the lead and tin halide precursor ink; depositing the lead and tin halide precursor ink onto a substrate; drying the lead and tin halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a solvent comprising: a second solvent; a first salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide; and a second salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

公开(公告)号：US11800726B1

公开(公告)日：2023-10-24

申请号：US17970465

申请日：2022-10-20

Applicant: CUBICPV INC.

Inventor： Michael D. Irwin ,  Jerred A. Chute ,  Vivek V. Dhas

IPC: B05D1/38 ,  H10K30/00 ,  H01G9/20 ,  B05D3/10 ,  H01L31/0304 ,  H03K5/19 ,  H03K5/24 ,  H03K17/22 ,  H10K30/15 ,  H10K71/12 ,  H10K71/40 ,  H10K85/30 ,  H01L31/0256

CPC classification number: H10K30/451 ,  B05D1/38 ,  B05D3/107 ,  H01G9/2045 ,  H01L31/0304 ,  H03K5/19 ,  H03K5/2472 ,  H03K17/223 ,  H10K30/15 ,  H10K30/151 ,  H10K71/12 ,  H10K71/40 ,  H10K85/30 ,  H01L2031/0344 ,  Y02E10/542 ,  Y02E10/549

Abstract: A method for preparing photoactive perovskite materials. The method comprises the steps of preparing a bismuth halide precursor ink. Preparing a bismuth halide precursor ink comprises the steps of introducing a bismuth halide into a vessel; introducing a first solvent to the vessel; and contacting the bismuth halide with the first solvent to dissolve the bismuth halide to form the bismuth halide precursor ink; depositing the bismuth halide precursor ink onto a substrate; drying the bismuth halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a solvent comprising: a second solvent; a first salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide; and a second salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

公开(公告)号：US20230167308A1

公开(公告)日：2023-06-01

申请号：US18070257

申请日：2022-11-28

Applicant: CubicPV Inc.

Inventor： Michael D. Irwin ,  Minh Tu Nguyen

IPC: C09D5/00 ,  C09D7/63 ,  C09D7/40

CPC classification number: C09D5/006 ,  C09D7/63 ,  C09D7/68 ,  C09D7/67 ,  C09D7/69 ,  C09D7/70

Abstract: A composition that includes a binding material and a lead-sequestration compound attached to the binding material, the lead-sequestration compound including one or more lead binding groups selected from the group consisting of: a carboxylate, a phosphate, a sulfide, a sulfate, and any combination thereof.

公开(公告)号：US11631582B2

公开(公告)日：2023-04-18

申请号：US16665831

申请日：2019-10-28

Applicant: CUBICPV INC.

Inventor： Michael D. Irwin ,  Michael Holland ,  Nicholas Anderson

IPC: C30B29/22 ,  H01L21/02 ,  H01L51/42 ,  C07F7/24 ,  H01L51/05

Abstract: A perovskite material that has a perovskite crystal lattice having a formula of CxMyXz, where x, y, and z, are real numbers, and 1,4-diammonium butane cation cations disposed within or at a surface of the perovskite crystal lattice. C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine. M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr and combinations thereof. X comprises one or more anions each selected from the group consisting of halides, sulfides, selenides, and combinations thereof.