公开(公告)号：US20200152836A1

公开(公告)日：2020-05-14

申请号：US16680214

申请日：2019-11-11

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh LIAO ,  Cheng-Long YEH ,  Ko-Yin LAI ,  Yao-Ru CHANG ,  Yung-Fu CHANG ,  Yi HSIAO ,  Shih-Chang LEE

IPC: H01L33/38 ,  H01L33/62

Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.

公开(公告)号：US20200152831A1

公开(公告)日：2020-05-14

申请号：US16680207

申请日：2019-11-11

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Hui-Fang KAO ,  Yi-Tang LAI ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Mei Chun LIU ,  Yao-Ru CHANG ,  Yi HISAO

IPC: H01L33/14 ,  H01L25/075 ,  H01L33/40

Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.

公开(公告)号：US20190148599A1

公开(公告)日：2019-05-16

申请号：US16227253

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yung-Fu CHANG ,  Rong-Ren LEE ,  Kuo-Feng HUANG ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Ming-Siang HUANG ,  Ming-Tzung LIOU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/06 ,  H01L33/44

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

公开(公告)号：US20180351036A1

公开(公告)日：2018-12-06

申请号：US16041398

申请日：2018-07-20

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng YU ,  Ching-Yuan TSAI ,  Yao-Ru CHANG ,  Hsin-Chan CHUNG ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Cheng-Hsing CHIANG ,  Kuo-Feng HUANG ,  Hsu-Hsuan TENG ,  Hung-Ta CHENG ,  Yung-Fu CHANG

IPC: H01L33/06 ,  H01L33/42 ,  H01L33/00 ,  H01L33/30 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L33/002 ,  H01L33/0079 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L33/642 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US20160064616A1

公开(公告)日：2016-03-03

申请号：US14939458

申请日：2015-11-12

Applicant: Epistar Corporation

Inventor： Yung-Fu CHANG ,  Meng-Chyi WU ,  Chong-Long HO ,  Ai-Sen LIU

IPC: H01L33/44 ,  H01L33/32 ,  H01L33/42 ,  H01L33/06

CPC classification number: H01L33/44 ,  H01L31/022483 ,  H01L31/02963 ,  H01L31/1844 ,  H01L31/1884 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0025 ,  Y02E10/544 ,  Y02P70/521

Abstract: An optical electrical device comprises a base and a transparent conductive structure on the base is disclosed. The base further comprises a light-emitting device and the transparent conductive structure comprises a transparent conductive oxide layer and a passivation layer on the transparent conductive oxide layer. The material of the transparent conductive oxide layer comprises transparent conductive metal oxide, such as ZnO. Furthermore, the transparent conductive metal oxide also comprises impurities, such as a carrier e.g. gallium.

Abstract translation: 公开了一种光电装置，其包括底座和底座上的透明导电结构。 基底还包括发光器件，并且透明导电结构在透明导电氧化物层上包括透明导电氧化物层和钝化层。 透明导电氧化物层的材料包括诸如ZnO的透明导电金属氧化物。 此外，透明导电金属氧化物还包括杂质，例如载体例如 镓。