公开(公告)号：US20230129560A1

公开(公告)日：2023-04-27

申请号：US17970437

申请日：2022-10-20

Applicant: EPISTAR CORPORATION

Inventor： Yao-Ru CHANG ,  Yi HSIAO ,  Sheng-Feng KUO ,  Wei-Chu LIAO ,  Shih-Chang LEE

IPC: H01L33/62 ,  H01L33/38

Abstract: A semiconductor device is provided, which includes an epitaxial structure, an electrode pad, and a contact region. The epitaxial structure includes a geometric center, a first surface and a second surface opposite to the first surface. The electrode pad is on the first surface. The contact region is on the second surface and includes a first group and a second group. The first group includes a plurality of first contact portions separated from each other and is arranged in a first ring shape. The second group includes a plurality of second contact portions separated from each other and is arranged in a second ring shape. A second distance between each of the plurality of second contact portions and the geometric center is greater than a first distance between each of the plurality of first contact portions and the geometric center.

公开(公告)号：US20220059717A1

公开(公告)日：2022-02-24

申请号：US17510522

申请日：2021-10-26

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shiuan-Leh LIN ,  Yung-Fu CHANG ,  Shih-Chang LEE ,  Chia-Liang HSU ,  Yi HSIAO ,  Wen-Luh LIAO ,  Hong-Chi SHIH ,  Mei-Chun LIU

IPC: H01L31/167 ,  H01L31/0304 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145 ,  G01J3/10

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.

公开(公告)号：US20200075807A1

公开(公告)日：2020-03-05

申请号：US16549822

申请日：2019-08-23

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Fan-Lei WU ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Hung-Ta CHENG ,  Chih-Chaing YANG ,  Yao-Ru CHANG ,  Yi HSIAO ,  Hsiang CHANG

IPC: H01L33/20

Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.

公开(公告)号：US20240136463A1

公开(公告)日：2024-04-25

申请号：US18391644

申请日：2023-12-20

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shiuan-Leh LIN ,  Yung-Fu CHANG ,  Shih-Chang LEE ,  Chia-Liang HSU ,  Yi HSIAO ,  Wen-Luh LIAO ,  Hong-Chi SHIH ,  Mei-Chun LIU

IPC: H01L31/167 ,  A61B5/021 ,  A61B5/024 ,  A61B5/145 ,  A61B5/1455 ,  G01J3/10 ,  H01L25/16 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0304

CPC classification number: H01L31/167 ,  A61B5/02141 ,  A61B5/02427 ,  A61B5/02433 ,  A61B5/14546 ,  A61B5/14552 ,  G01J3/10 ,  H01L25/167 ,  H01L31/02005 ,  H01L31/02325 ,  H01L31/03046

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ≥13.

公开(公告)号：US20220102582A1

公开(公告)日：2022-03-31

申请号：US17550449

申请日：2021-12-14

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Fan-Lei WU ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Hung-Ta CHENG ,  Chih-Chaing YANG ,  Yao-Ru CHANG ,  Yi HSIAO ,  Hsiang CHANG

IPC: H01L33/20

Abstract: A semiconductor structure includes a carrier, a bonding structure, a semiconductor stack, a supporting element and a bridge layer. The bonding structure is on the carrier and has an upper surface. The semiconductor stack is on the bonding structure. The supporting element is on the bonding structure and has a side wall. The bridge layer has a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion. The second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure. The first portion of the bridge layer directly contacts the side wall of the supporting element.

公开(公告)号：US20200168757A1

公开(公告)日：2020-05-28

申请号：US16697340

申请日：2019-11-27

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shiuan-Leh LIN ,  Yung-Fu CHANG ,  Shih-Chang LEE ,  Chia-Liang HSU ,  Yi HSIAO ,  Wen-Luh LIAO ,  Hong-Chi SHIH ,  Mei-Chun LIU

IPC: H01L31/167 ,  H01L31/0304 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16 ,  G01J3/10 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ≥13.

公开(公告)号：US20200152836A1

公开(公告)日：2020-05-14

申请号：US16680214

申请日：2019-11-11

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh LIAO ,  Cheng-Long YEH ,  Ko-Yin LAI ,  Yao-Ru CHANG ,  Yung-Fu CHANG ,  Yi HSIAO ,  Shih-Chang LEE

IPC: H01L33/38 ,  H01L33/62

Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.