公开(公告)号：US20180120692A1

公开(公告)日：2018-05-03

申请号：US15829090

申请日：2017-12-01

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Takahiro ONOUE ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/48 ,  G03F1/38 ,  G03F1/26 ,  C23C14/18 ,  C23C14/06

CPC classification number: G03F1/24 ,  C23C14/0641 ,  C23C14/185 ,  G03F1/26 ,  G03F1/38 ,  G03F1/48 ,  G03F7/2004

Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase- shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.

公开(公告)号：US20180081264A1

公开(公告)日：2018-03-22

申请号：US15824227

申请日：2017-11-28

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Toshihiko ORIHARA ,  Hirofumi KOZAKAI ,  Youichi USUI ,  Tsutomu SHOKI ,  Junichi HORIKAWA

IPC: G03F1/22 ,  H01L21/033 ,  G03F1/50 ,  G03F1/60 ,  G03F7/20

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

公开(公告)号：US20160238925A1

公开(公告)日：2016-08-18

申请号：US14787532

申请日：2014-08-29

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Tatsuo ASAKAWA ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/84 ,  G03F7/2004

Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 μm×1 μm region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA70−BA30)/(BD70−BD30)≧60(%/nm) and maximum height (Rmax)≦4.5 nm.

Abstract translation: 一种能够通过使用高度敏感的缺陷检查装置在缺陷检查中抑制由于基材或膜的表面粗糙度引起的伪缺陷的检测来促进污染物，划痕和其它临界缺陷的发现的反射掩模板。 反射掩模板具有掩模坯料多层膜，其包括通过交替层叠高折射率层和低折射率层而获得的多层反射膜，以及在掩模坯料基板的主表面上的吸收膜，其中， 对于其上形成掩模坯料多层膜的反射掩模板的表面的1μm×1μm区域，用原子力显微镜测量的承载面积（％）和承载深度（nm）之间的关系， 反射掩模坯料满足（BA70-BA30）/（BD70-BD30）≥60（％/ nm）和最大高度（Rmax）≤4.5nm的关系。

公开(公告)号：US20160161837A1

公开(公告)日：2016-06-09

申请号：US14787497

申请日：2014-08-29

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Tatsuo ASAKAWA ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F7/2004

Abstract: Provided is a reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 μm×3 μm region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.

Abstract translation: 本发明提供一种能够通过使用高灵敏度的缺陷检查装置在缺陷检查中抑制由于基板或膜的表面粗糙度引起的伪缺陷的检测而有助于发现污染物，划痕和其它关键缺陷的反射掩模板。 反射掩模板具有掩模坯料多层膜，其包括通过交替层叠高折射率层和低折射率层而获得的多层反射膜，以及在掩模坯料基板的主表面上的吸收膜，其中根平均 通过用原子力显微镜测量其上形成掩模坯料多层膜的反射掩模坯料的表面上的3μm×3μm区域获得的平方粗糙度（Rms）不大于0.5nm，功率谱密度 在1μm〜10μm的空间频率处不大于50nm。

公开(公告)号：US20240319578A1

公开(公告)日：2024-09-26

申请号：US18731088

申请日：2024-05-31

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F1/46 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/46 ,  G03F7/2004

Abstract: A reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank comprises a substrate, a multilayer reflection film on the substrate, and an absorber film on the multilayer reflection film. The reflective mask blank is characterized in that: the absorber film includes an absorption layer and a reflectance adjustment layer; the absorption layer contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer includes a lower surface region including a surface on the substrate side, and an upper surface region including a surface on the side opposite to the substrate; and the concentration (at. %) of the added element in the lower surface region and the concentration (at. %) of the added element in the upper surface region are different.

公开(公告)号：US20230168575A1

公开(公告)日：2023-06-01

申请号：US17990049

申请日：2022-11-18

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI

IPC: G03F1/32 ,  G03F1/24

CPC classification number: G03F1/32 ,  G03F1/24 ,  G03F7/2004

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

公开(公告)号：US20220229357A1

公开(公告)日：2022-07-21

申请号：US17609166

申请日：2020-06-18

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F1/58

Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank (100) comprises a substrate (1), a multilayer reflection film (2) on the substrate, and an absorber film (4) on the multilayer reflection film. The reflective mask blank (100) is characterized in that: the absorber film (4) includes an absorption layer (42) and a reflectance adjustment layer (44); the absorption layer (42) contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer (42) includes a lower surface region (46) including a surface on the substrate side, and an upper surface region (48) including a surface on the side opposite to the substrate; and the concentration (at. %) of the added element in the lower surface region (46) and the concentration (at. %) of the added element in the upper surface region (48) are different.

公开(公告)号：US20220121102A1

公开(公告)日：2022-04-21

申请号：US17431700

申请日：2020-02-21

Applicant: HOYA CORPORATION

Inventor： Tsutomu SHOKI ,  Yohei IKEBE

IPC: G03F1/24 ,  H01L21/033 ,  G03F1/58

Abstract: Provided is a reflective mask blank that enables to further reduce the shadowing effect of a reflective mask and form a fine and highly accurate absorber pattern.
The reflective mask blank comprising a multilayer reflective film, an absorber film, and an etching mask film disposed on a substrate in this order, wherein the absorber film comprises a buffer layer and an absorption layer provided on the buffer layer, the buffer layer comprises a material comprising tantalum (Ta) or silicon (Si) and a film thickness of the buffer layer is 0.5 nm or more and 25 nm or less, the absorption layer comprises a material comprising chromium (Cr) and an extinction coefficient of the absorption layer with respect to EUV light is higher than the extinction coefficient of the buffer layer with respect to the EUV light, and the etching mask film comprises a material comprising tantalum (Ta) or silicon (Si) and a film thickness of the etching mask film is 0.5 nm or more and 14 nm or less.

公开(公告)号：US20170023853A1

公开(公告)日：2017-01-26

申请号：US15134776

申请日：2016-04-21

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Toshihiko ORIHARA ,  Hirofumi KOZAKAI ,  Youichi USUI ,  Tsutomu SHOKI ,  Junichi HORIKAWA

IPC: G03F1/22 ,  G03F1/60 ,  H01L21/033 ,  G03F7/20

CPC classification number: G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2004 ,  H01L21/0332 ,  H01L21/0334

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

Abstract translation: 公开了一种用于光刻的掩模空白基板，其中基板的主表面满足关系式（BA70-BA30）/（BD70-BD30）≥350（％/ nm），并具有最大高度（Rmax） 通过用原子力显微镜测量在基板一侧的主表面中的面积为1μm×1μm的轴承面积（％）和轴承深度（nm）之间的关系，≤1.2nm，其中， 形成转印图案，其中BA30被定义为30％的轴承面积，BA70被定义为70％的轴承面积，并且BD70和BD30分别表示承载面积为30％的轴承深度和轴承面积 70％。

公开(公告)号：US20170010525A1

公开(公告)日：2017-01-12

申请号：US15216072

申请日：2016-07-21

Applicant: HOYA CORPORATION

Inventor： Tsutomu SHOKI ,  Kazuhiro HAMAMOTO

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03F1/44 ,  G03F1/84

Abstract: Provided is a multilayer reflective film formed substrate formed with a fiducial mark for accurately managing coordinates of defects. A multilayer reflective film formed substrate is formed with a multilayer reflective film, which is adapted to reflect EUV light, on a substrate and a fiducial mark which serves as a reference for a defect position in defect information is formed on the multilayer reflective film. The fiducial mark includes a main mark for determining a reference point for the defect position and auxiliary marks arranged around the main mark. The main mark has a point-symmetrical shape and has a portion with a width of 200 nm or more and 10 μm or less with respect to a scanning direction of an electron beam writing apparatus or defect inspection light.

Abstract translation: 提供了形成有用于准确地管理缺陷坐标的基准标记的多层反射膜形成基板。 在多层反射膜形成基板上形成多层反射膜，该多层反射膜适用于反射EUV光，并且在多层反射膜上形成用作缺陷信息中缺陷位置的基准的基准标记。 基准标记包括用于确定缺陷位置的参考点和布置在主标记周围的辅助标记的主标记。 主标记具有点对称形状，并且具有相对于电子束写入装置的扫描方向或缺陷检查光的宽度为200nm以上且10μm以下的部分。