公开(公告)号：US08124495B2

公开(公告)日：2012-02-28

申请号：US11627883

申请日：2007-01-26

Applicant: Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

Inventor： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC: H01L21/76

CPC classification number: H01L27/14689 ,  H01L27/1463

Abstract: Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.

Abstract translation: 提供半导体器件及其制造方法。 在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。 在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。 从隔离结构的至少一部分去除第一层。 在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。 第三折射率基本上类似于第一折射率。

公开(公告)号：US07479403B2

公开(公告)日：2009-01-20

申请号：US11488611

申请日：2006-07-19

Applicant: Dun-Nian Yaung ,  Sou-Kuo Wu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

Inventor： Dun-Nian Yaung ,  Sou-Kuo Wu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC: H01L21/00

CPC classification number: H01L31/103 ,  H01L27/1463 ,  H01L27/14672

Abstract: A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second conductivity type. Each doped region of the first conductivity type is beneath a corresponding trench. Each doped region of the second conductivity type is sandwiched between the corresponding doped region and the substrate of the first conductivity type. No edge of any doped region of the first or second conductivity type extends to the trench corners. A method of fabricating the photo sensor is also provided.

Abstract translation: 一个具有固定光电二极管结构的光电传感器，与沟槽隔离结构集成。 光传感器包括第一导电类型的衬底，衬底中的至少一个沟槽，第一导电类型的至少一个掺杂区域和第二导电类型的至少一个掺杂区域。 第一导电类型的每个掺杂区域在相应的沟槽之下。 第二导电类型的每个掺杂区夹在相应的掺杂区和第一导电类型的衬底之间。 第一或第二导电类型的任何掺杂区域的边缘不延伸到沟槽角。 还提供了制造光传感器的方法。

公开(公告)号：US07253458B2

公开(公告)日：2007-08-07

申请号：US10980959

申请日：2004-11-04

Applicant: Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Wen-De Wang ,  Ho-Ching Chien ,  Shou-Gwo Wuu

Inventor： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Wen-De Wang ,  Ho-Ching Chien ,  Shou-Gwo Wuu

IPC: H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636

Abstract: A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.

Abstract translation: 互补金属氧化物半导体场效应晶体管（CMOS-FET）图像传感器。 在基板上形成有源感光像素。 像素的至少一侧具有等于或小于约3μm的宽度。 在覆盖像素的基板上设置至少一个电介质层。 滤色器设置在至少一个电介质层上。 微透镜阵列设置在像素的滤色器上，所有电介质层和滤色器的厚度之和除以像素宽度等于或小于约1.87。

公开(公告)号：US06995411B2

公开(公告)日：2006-02-07

申请号：US10780790

申请日：2004-02-18

Applicant: Dun-Nian Yaung ,  Sou-Kuo Wu ,  Ho-Ching Chien

Inventor： Dun-Nian Yaung ,  Sou-Kuo Wu ,  Ho-Ching Chien

IPC: H01L29/76

CPC classification number: H01L27/14636 ,  H01L27/14643

Abstract: An image sensor has a vertically integrated thin-film photodiode. In one implementation, the image sensor has a substrate, an interconnection structure adjacent to the substrate, wherein the interconnection structure includes a top metal layer comprising a plurality of first metal pads for thin-film photodiodes and a second metal pad for a ground pad, a dielectric layer with a plurality of first openings and second opening disposed on the interconnection structure, a plurality of bottom doped layers with a first conductive type respectively disposed in the first openings, wherein each bottom doped layer contacts the corresponding first metal pad without extending outside the surface of the corresponding first metal pad, an I-type layer disposed over at least one bottom doped layer and the dielectric layer, an upper doped layer with a second conductive type disposed over the I-type layer, and a transparent electrode disposed over the upper doped layer and contacting the second metal pad through the second opening in the dielectric layer.

Abstract translation: 图像传感器具有垂直集成的薄膜光电二极管。 在一个实施方案中，图像传感器具有衬底，与衬底相邻的互连结构，其中互连结构包括顶部金属层，其包括用于薄膜光电二极管的多个第一金属焊盘和用于接地焊盘的第二金属焊盘， 具有多个第一开口和布置在所述互连结构上的第二开口的电介质层，分别设置在所述第一开口中的多个第一导电类型的底部掺杂层，其中每个底部掺杂层接触相应的第一金属焊盘而不延伸到外部 相应的第一金属焊盘的表面，设置在至少一个底部掺杂层和电介质层上的I型层，设置在I型层上的具有第二导电类型的上掺杂层和设置在I型层上的透明电极 所述上掺杂层并且通过所述介电层中的所述第二开口接触所述第二金属焊盘。

公开(公告)号：US06982443B2

公开(公告)日：2006-01-03

申请号：US10799986

申请日：2004-03-12

Applicant: Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung

Inventor： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung

IPC: H01L27/148 ,  H01L29/768

CPC classification number: H01L27/14632 ,  H01L27/1462

Abstract: A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.

公开(公告)号：US06642076B1

公开(公告)日：2003-11-04

申请号：US10278134

申请日：2002-10-22

Applicant: Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng

Inventor： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng

IPC: H01L2100

CPC classification number: H01L27/14689 ,  H01L27/0802 ,  H01L27/14609 ,  H01L27/1463

Abstract: A new method to form CMOS image sensors in the manufacture of an integrated circuit device is achieved. The method comprises providing a semiconductor substrate. Sensor diodes are formed in the semiconductor substrate each comprising a first terminal and a second terminal. Gates are formed for transistors in the CMOS image sensors. The gates comprise a conductor layer overlying the semiconductor substrate with an insulating layer therebetween. The transistors include reset transistors. Ions are implanted into the semiconductor substrate to form source/drain regions for the transistors. The source regions of the reset transistors are formed in the first terminals of the sensor diodes. Ions are implanted into the reset transistor sources to form double diffused sources. The implanting is blocked from other source/drain regions.

Abstract translation: 实现了在制造集成电路器件中形成CMOS图像传感器的新方法。 该方法包括提供半导体衬底。 传感器二极管形成在每个包括第一端子和第二端子的半导体衬底中。 为CMOS图像传感器中的晶体管形成栅极。 栅极包括覆盖半导体衬底的导体层，其间具有绝缘层。 晶体管包括复位晶体管。 将离子注入到半导体衬底中以形成用于晶体管的源极/漏极区域。 复位晶体管的源极区域形成在传感器二极管的第一端子中。 离子被植入到复位晶体管源中以形成双扩散源。 植入物从其它源极/漏极区域被阻挡。

公开(公告)号：US5578225A

公开(公告)日：1996-11-26

申请号：US374900

申请日：1995-01-19

Applicant: Ho-Ching Chien

Inventor： Ho-Ching Chien

IPC: H01J1/304 ,  H01J3/02 ,  H01J31/12 ,  B44C1/22

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J31/127

Abstract: A field emission display that may be viewed through the back plate, thus providing increased luminous efficiency, and methods for making such a display, are described. A glass substrate is provided as a base for the display faceplate. There is a reflective, conductive layer over the glass substrate. A phosphor layer is formed over the reflective, conductive layer. A second glass substrate acts as a transparent base for the display baseplate, which is mounted opposite and parallel to the faceplate. A first transparent insulating layer is formed over the second glass substrate. There are parallel, transparent cathode electrodes with auxiliary metal electrodes, over the first insulating layer. Parallel, transparent gate electrodes are formed over, separate from, and orthogonally to the parallel, transparent cathode electrodes, and also have auxiliary metal electrodes. A second transparent insulating layer is between the gate electrodes and the cathode electrodes. A plurality of openings extend through the second insulating layer and the gate electrodes. At each opening is a field emission microtip connected to and extending up from a cathode electrode, whereby electrons may be selectively emitted from each microtip to form a display image on the faceplate phosphor layer, which is viewable through the baseplate.

Abstract translation: 描述可以通过背板观看场致发射显示器，从而提供增加的发光效率，以及制造这种显示器的方法。 提供玻璃基板作为显示面板的基座。 玻璃基板上有一层反射导电层。 磷光体层形成在反射导电层上。 第二玻璃基板用作显示基板的透明基座，该底板安装成与面板相对并平行。 在第二玻璃基板上形成第一透明绝缘层。 在第一绝缘层上方具有平行的具有辅助金属电极的透明阴极电极。 平行的，透明的栅电极形成在平行的透明阴极电极的上方，与之分开并且与其垂直，并且还具有辅助金属电极。 第二透明绝缘层位于栅电极和阴极之间。 多个开口延伸穿过第二绝缘层和栅电极。 在每个开口处是连接到阴极电极并从阴极电极向上延伸的场发射微尖端，由此可以从每个微尖端选择性地发射电子，以在面板荧光体层上形成可通过基板观察的显示图像。

公开(公告)号：US20110049565A1

公开(公告)日：2011-03-03

申请号：US12552856

申请日：2009-09-02

Applicant: Hsin-Hui Hsu ,  Ho-Ching Chien ,  Ching-Wei Chen ,  Sen-Huang Huang

Inventor： Hsin-Hui Hsu ,  Ho-Ching Chien ,  Ching-Wei Chen ,  Sen-Huang Huang

IPC: H01L31/102 ,  H01L21/20

CPC classification number: H01L21/0262 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02658 ,  H01L27/14689 ,  H01L31/103 ,  H01L31/1812 ,  Y02E10/50

Abstract: The present invention discloses an optoelectronic device, comprising: a substrate made of a first material; a region in the substrate, the region being made of a second material different from the first material; and a photo diode formed in the region by ion implantation. The second material for example is silicon germanium (Si1-xGex) or silicon carbide (Si1-yCy), wherein 0

Abstract translation: 本发明公开了一种光电器件，包括：由第一材料制成的衬底; 所述区域由所述第一材料不同的第二材料制成; 以及通过离子注入在该区域中形成的光电二极管。 第二种材料例如是硅锗（Si1-xGex）或碳化硅（Si1-yCy），其中0

公开(公告)号：US07649231B2

公开(公告)日：2010-01-19

申请号：US10682269

申请日：2003-10-09

Applicant: Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng

Inventor： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng

IPC: H01L23/62

CPC classification number: H01L27/14689 ,  H01L27/0802 ,  H01L27/14609 ,  H01L27/1463

Abstract: A new method to form CMOS image sensors in the manufacture of an integrated circuit device is achieved. The method comprises providing a semiconductor substrate. Sensor diodes are formed in the semiconductor substrate each comprising a first terminal and a second terminal. Gates are formed for transistors in the CMOS image sensors. The gates comprise a conductor layer overlying the semiconductor substrate with an insulating layer therebetween. The transistors include reset transistors. Ions are implanted into the semiconductor substrate to form source/drain regions for the transistors. The source regions of the reset transistors are formed in the first terminals of the sensor diodes. Ions are implanted into the reset transistor sources to form double diffused sources. The implanting is blocked from other source/drain regions.

Abstract translation: 实现了在制造集成电路器件中形成CMOS图像传感器的新方法。 该方法包括提供半导体衬底。 传感器二极管形成在每个包括第一端子和第二端子的半导体衬底中。 为CMOS图像传感器中的晶体管形成栅极。 栅极包括覆盖半导体衬底的导体层，其间具有绝缘层。 晶体管包括复位晶体管。 将离子注入到半导体衬底中以形成用于晶体管的源极/漏极区域。 复位晶体管的源极区域形成在传感器二极管的第一端子中。 离子被植入到复位晶体管源中以形成双扩散源。 植入物从其它源极/漏极区域被阻挡。

公开(公告)号：US07553689B2

公开(公告)日：2009-06-30

申请号：US11181189

申请日：2005-07-13

Applicant: Jeng-Shyan Lin ,  Chien-Hsien Tseng ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung ,  Hung-Jen Hsu

Inventor： Jeng-Shyan Lin ,  Chien-Hsien Tseng ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung ,  Hung-Jen Hsu

IPC: H01L21/00

CPC classification number: H01L27/14685 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632

Abstract: A semiconductor device including a semiconductor substrate having a photosensor formed therein; a first layer overlying the substrate, the first layer includes a portion having a generally concave shaped surface being the negative shaped of a micro-lens to be formed there over; a second layer overlying the first layer, the second layer including a generally convex shaped portion vertically aligned with and mating with the generally concave shaped surface, the generally convex shaped portion being constructed and arranged to define a micro-lens positioned to cause parallel light passing through the micro-lens to converge on and strike the photosensor.

Abstract translation: 一种半导体器件，包括其中形成有光电传感器的半导体衬底; 覆盖衬底的第一层，第一层包括具有大致凹形形状的表面的部分，其为在其上形成的微透镜的负形状; 覆盖第一层的第二层，第二层包括垂直对准并与大致凹形的表面配合的大致凸形的部分，大体上凸形的部分被构造和布置以限定微透镜，定位成使得平行光通过 通过微透镜收敛并撞击光电传感器。