Capacitors with nanoislands on conductive plates

    公开(公告)号:US11855125B2

    公开(公告)日:2023-12-26

    申请号:US16560647

    申请日:2019-09-04

    CPC classification number: H01L28/60 H01G4/008 H01G4/1209 H01G4/28 H01L21/4846

    Abstract: Embodiments herein relate to a capacitor device or a manufacturing process flow for creating a capacitor that includes nanoislands within a package. The capacitor a first conductive plate having a first side and a second side opposite the first side and a second conductive plate having a first side and a second side opposite the first side where the first side of the first conductive plate faces the first side of the second conductive plate. A first plurality of nanoislands is distributed on the first side of the first conductive plate and a second plurality of nanoislands is distributed on the first side of the second conductive plate, where the first conductive plate, the second conductive plate, and the first and second pluralities of nanoislands form a capacitor. The nanoislands may be applied to the conductive plates using a sputtering technique.

    OPTICAL COMMUNICATION BETWEEN INTEGRATED CIRCUIT DEVICE ASSEMBLIES

    公开(公告)号:US20220404553A1

    公开(公告)日:2022-12-22

    申请号:US17354446

    申请日:2021-06-22

    Abstract: An integrated circuit package may be formed comprising a first integrated circuit assembly, a second integrated circuit assembly, and a means to transfer optical signals therebetween. This optical signal transfer may be facilitated with a first lens or a first micro-lens array adjacent at least one waveguide of the first integrated circuit assembly and a second lens or second micro-lens array adjacent at least one waveguide of the second integrated circuit assembly, wherein the optical signals are transmitted across a gap between the first lens/micro-lens array and the second lens/micro-lens array. In further embodiments, the optical signal transfer assembly may comprise at least one photonic bridge between at least one waveguide of the first integrated circuit assembly and at least one waveguide of the second integrated circuit assembly.

    Electronic substrate having an embedded etch stop to control cavity depth in glass layers therein

    公开(公告)号:US12255147B2

    公开(公告)日:2025-03-18

    申请号:US17243784

    申请日:2021-04-29

    Abstract: An electronic substrate may be fabricated having at least two glass layers separated by an etch stop layer, wherein a bridge is embedded within one of the glass layers. The depth of a cavity formed for embedding the bridge is control by the thickness of the glass layer rather than by controlling the etching process used to form the cavity, which allows for greater precision in the fabrication of the electronic substrate. In an embodiment of the present description, an integrated circuit package may be formed with the electronic substrate, wherein at least two integrated circuit devices may be attached to the electronic substrate, such that the bridge provides device-to-device interconnection between the at least two integrated circuit devices. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board.

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